相关论文: Unexpected Giant Microwave Conductivity in a Nomin…
Ferroelectric domain walls (DWs) are nanoscale topological defects that can be easily tailored to create nanoscale devices. Their excitations, recently discovered to be responsible for DW GHz conductivity, hold promise for faster signal…
We report the nanoscale electrical imaging results in hexagonal $Lu_{0.6}Sc_{0.4}FeO_3$ single crystals using conductive atomic force microscopy (C-AFM) and scanning microwave impedance microscopy (MIM). While the dc and ac response of the…
Conductive ferroelectric domain walls--ultra-narrow and configurable conduction paths, have been considered as essential building blocks for future programmable domain wall electronics. For applications in high density devices, it is…
Electronic conduction along individual domain walls (DWs) has been reported in BiFeO$_3$ (BFO) and other nominally insulating ferroelectrics. DWs in these materials separate regions of differently oriented electrical polarization (domains)…
Ferroelectric domain walls represent multifunctional 2D-elements with great potential for novel device paradigms at the nanoscale. Improper ferroelectrics display particularly promising types of domain walls, which, due to their unique…
Conductive ferroelectric domain walls (DWs) represent a promising topical system for the development of nanoelectronic components and device sensors to be operational at elevated temperatures. DWs show very different properties as compared…
The conductive domain wall (CDW) is extensively investigated in ferroelectrics, which can be considered as a quasi-two-dimensional reconfigurable conducting channel embedded into an insulating material. Therefore, it is highly important for…
Conductive ferroelectric domain walls (DWs) represent a promising topical system for the development of nanoelectronic components and devices. DWs show very different properties as compared to their bulk counterparts. Of central interest…
Using density functional theory implemented within a tight-binding linear muffin-tin orbital method we perform calculations of electronic, magnetic and transport properties of ferromagnetic free-standing fcc Co wires with diameters up to…
We study the effciency of the magnetoimpedance (MI) of thin-wall circumferentially ordered nanotubes in sub-GHz and GHz frequency regimes using micromagnetic simulations. We consider empty ferromagnetic tubes as well as tubes filled with…
Domain walls (DWs) in ferroic materials, across which the order parameter abruptly changes its orientation, can host emergent properties that are absent in the bulk domains. Using a broadband ($10^6-10^{10}$ Hz) scanning impedance…
We study the externally-driven motion of the domain walls (DWs)of the pi/2 type in (in-the-plane ordered) nanostripes of the crystalline cubic anisotropy. Such DWs are much narrower than the transverse and vortex pi DWs of the soft-magnetic…
The nature of superconductivity in BiS$_2$-based superconductors has been controversial while ab-initio calculations proposed this system in close proximity to a charge-density-wave (CDW) phase. Using high-energy high-flux X-ray…
Ferroelectric domain walls exhibit a range of interesting electrical properties and are now widely recognized as functional two-dimensional systems for the development of next-generation nanoelectronics. A major achievement in the field was…
Ferroelectric domain walls are nm-sized interfaces between sections of different allowed values of the spontaneous polarization, the so-called domains. These walls - neutral or charged - can be created, displaced, deleted, and recreated…
Among the recent discoveries of domain wall functionalities, the observation of electrical conduction at ferroelectric domain walls in the multiferroic insulator BiFeO3 has opened exciting new possibilities. Here, we report evidence of…
We measure the small signal, 1 GHz source-drain dynamical conductance of a back-gated single-walled carbon nanotube field effect transistor at both low and high dc bias voltages. At all bias voltages, the intrinsic device dynamical…
Atomically sharp domain walls (DWs) in ferroelectrics are considered as an ideal platform to realize easy-to-reconfigure nanoelectronic building blocks, created, manipulated and erased by external fields. However, conductive DWs have been…
Strongly charged head-to-head (H2H) domain walls (DWs) that are purposely engineered along the [110] crystallographic orientation into ferroelectric BaTiO$_3$ single crystals have been proposed as novel 2-dimensional electron gases (2DEGs)…
Domain walls in ferroelectric oxides provide fertile ground for the development of next-generation nanotechnology. Examples include domain-wall-based memory, memristors, and diodes, where the unusual electronic properties and the quasi-2D…