相关论文: Wavelength-dependence of laser excitation process …
Effect of laser wavelength on the carrier-phonon dynamics and damage threshold of silicon is studied numerically. Laser excitation dynamics in silicon is studied using Three-Temperature Model (3TM). We consider the evolution of electron,…
The mechanisms of ripple formation on silicon surface by femtosecond laser pulses are investigated. We demonstrate the transient evolution of the density of the excited free-carriers. As a result, the experimental conditions required for…
Nonlinear optical phenomena in silicon such as self-focusing and multi-photon absorption are strongly dependent on the wavelength, energy and duration of the exciting pulse. Thus, a pronounced wavelength dependence of the sub-surface…
A density-dependent two-temperature model is applied to describe laser excitation and the following relaxation processes of silicon in an external electric field. Two approaches on how to describe the effects of the external electric field…
We have investigated the effect of the laser wavelength on the fabrication of optical waveguides and tracks of modified material via direct laser writing inside fused silica. The size of the laserinscribed tracks, the material modification…
The physical mechanisms of the laser-induced periodic surface structures (LIPSS) formation are studied in this paper for single-pulse irradiation regimes. The change in the LIPSS period with wavelength of incident laser radiation is…
Graphene on a SiO$_2$/Si substrate was removed by ultraviolet pulsed laser irradiation. Threshold laser power density to remove graphene depended on the graphene thickness. The mechanism is discussed using kinetic energy of thermal…
Porous silicon layers (PS) have been prepared in this work via Photoelectrochemical etching process (PEC) of n type silicon wafer of 0.8 ohm.cm resistivity in hydrofluoric (HF) acid of 24.5 precent concentration at different etching times…
Laser excitation in silicon from femto- to pico-second time scales is studied. We assume the Three-Temperature Model (3TM) which describes the dynamics of the distinct quasi-temperatures for electrons, holes, and lattice. Numerical results…
We calculate the electron excitation in cubic silicon carbide (3C-SiC) caused by the intense femtosecond laser double pulses using time-dependent density functional theory (TDDFT). We assume the electron distributions in the valence band…
We generate silicon vacancy related defects in high-quality epitaxial silicon carbide layers by means of electron irradiation. By controlling the irradiation fluence, the defect concentration is varied over several orders of magnitude. We…
Upon the excitation by an ultrashort laser pulse the conditions in a material can drastically change, altering its optical properties and therefore the relative amount of absorbed energy, a quan- tity relevant for determining the damage…
Using different laser irradiation patterns to modify of silicon surface, it has been demonstrated that, at rather small overlapping between irradiation spots, highly regular laser-induced periodic surface structures (LIPSS) can be produced…
We theoretically study the influence of laser polarization in inelastic scattering of electrons by hydrogen atoms in the presence of a circularly polarized laser field in the domain of field strengths below $10^{7}$ V/cm and high projectile…
The inclusion of semiconducting material within a composite barrier enables the perfectly uniform propagation of surface ionization waves (SIW) in air at atmospheric pressure regardless of the polarity of the applied electric field, unlike…
The electromagnetic interaction between Ag nanoparticles on the top of the Si substrate and the incident light has been studied by numerical simulations. It is found that the presence of a dielectric layer with different thickness leads to…
Photonic crystal fibers are used in fiber amplifiers and lasers because of the flexibility in the design of mode area and dispersion. However, these quantities depend strongly on the wavelength. The wavelength dependence of gain,…
In this tutorial, the physical origins and mathematical analyses of laser linewidths are reviewed. The semi-classical model is based on an equation for the light-mode amplitude that includes random source terms, one term for each process…
Hot electron temperatures and electron energy spectra in the course of interaction between intense laser pulse and overdense plasmas are reexamined from a viewpoint of the difference in laser wavelength. The hot electron temperature…
Direct laser writing of surface waveguides with ultrashort pulses is a crucial achievement towards all-laser manufacturing of photonic integrated circuits sensitive to their environment. In this Letter, few-cycle laser pulses (with a sub-10…