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相关论文: Modeling the vertical growth of van der Waals stac…

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We use a data-driven approach to study the magnetic and thermodynamic properties of van der Waals (vdW) layered materials. We investigate monolayers of the form A$_2$B$_2$X$_6$, based on the known material Cr$_2$Ge$_2$Te$_6$, using density…

材料科学 · 物理学 2018-06-22 Trevor David Rhone , Wei Chen , Shaan Desai , Amir Yacoby , Efthimios Kaxiras

The high mechanical strength and excellent flexibility of 2D materials such as graphene are some of their most important properties [1]. Good flexibility is key for exploiting 2D materials in many emerging technologies, such as wearable…

介观与纳米尺度物理 · 物理学 2018-09-05 A. P. Rooney , Z. Li , W. Zhao , A. Gholinia , A. Kosikov , G. Auton , F. Ding , R. V. Gorbachev , R. J. Young , S. J Haigh

Transition metal dichalcogenide (TMD) monolayers and heterostructures have emerged as a compelling class of materials with transformative new science that may be harnessed for novel device technologies. These materials are commonly…

Multilayer graphene (MLG) films were grown by chemical vapour deposition (CVD) on molybdenum carbide ($MoC_{x}$) substrates. We fabricated the catalytic $MoC_{x}$ films by plasma enhanced atomic layer deposition (PEALD). The mechanism of…

应用物理 · 物理学 2020-01-01 Eldad Grady , Chenhui Li , Oded Raz , W. M. M. Kessels , Ageeth A. Bol

Today the study of two-dimensional (2D) materials has become one of the key objectives of materials science. Unlike their three-dimensional counterparts, 2D materials can simultaneously demonstrate unique transport and mechanical properties…

材料科学 · 物理学 2021-03-16 Arslan B. Mazitov , Artem R. Oganov

Germanium is emerging as the substrate of choice for the growth of graphene in CMOS-compatible processes. For future application in next generation devices the accurate control over the properties of high-quality graphene synthesized on Ge…

材料科学 · 物理学 2018-05-04 A. M. Scaparro , V. Miseikis , C. Coletti , A. Notargiacomo , M. Pea , M. De Seta , L. Di Gaspare

The preparation of two-dimensional transition metal dichalcogenides on an industrially relevant scale will rely heavily on bottom-up methods such as chemical vapour deposition. In order to obtain sufficiently large quantities of…

材料科学 · 物理学 2022-08-18 E. Pollmann , A. Maas , D. Marnold , A. Hucht , R. Neubieser , M. Stief , L. Madauß , M. Schleberger

The fabrication of van der Waals heterostructures, artificial materials assembled by individually stacking atomically thin (2D) materials, is one of the most promising directions in 2D materials research. Until now, the most widespread…

When two-dimensional van der Waals materials are stacked to build heterostructures, moir\'e patterns emerge from twisted interfaces or from mismatch in lattice constant of individual layers. Relaxation of the atomic positions is a direct,…

介观与纳米尺度物理 · 物理学 2023-03-15 Dorri Halbertal , Lennart Klebl , Valerie Hsieh , Jacob Cook , Stephen Carr , Guang Bian , Cory Dean , Dante M. Kennes , Dmitri. N. Basov

Monolayer molybdenum disulphide (MoS2) is a promising two-dimensional direct-bandgap semiconductor with potential applications in atomically thin and flexible electronics. An attractive insulating substrate or mate for MoS2 (and related…

Assembling different two-dimensional (2D) crystals, covering a very broad range of properties, into van der Waals (vdW) heterostructures enables the unprecedented possibilities for combining the best of different ingredients in one…

Emerging flexible and wearable technologies such as healthcare electronics and energy-harvest devices could be transformed by the unique properties of graphene. The vision for a graphene-driven industrial revolution is motivating intensive…

材料科学 · 物理学 2015-06-30 Thomas H. Bointon , Matthew D. Barnes , Saverio Russo , Monica F. Craciun

The exploration of emerging materials physics and prospective applications of two-dimensional materials greatly relies on the growth control of their thickness, phases, morphologies and film-substrate interactions. Though substantial…

材料科学 · 物理学 2015-09-29 Yiping Wang , Yunfeng Shi , Guoqing Xin , Jie Lian , Jian Shi

Grain boundary roughness can affect electronic and mechanical properties of two-dimensional materials. This roughness depends crucially on the growth process by which the two-dimensional material is formed. To investigate the key mechanisms…

材料科学 · 物理学 2022-04-06 Fabio D. A. Aarão Reis , Bastien Marguet , Olivier Pierre-Louis

This work presents a comparison of the structural, chemical and electronic properties of multi-layer graphene grown on SiC(000-1) by using two different growth approaches: thermal decomposition and chemical vapor deposition (CVD). The…

材料科学 · 物理学 2018-05-03 D. Convertino , A. Rossi , V. Miseikis , V. Piazza , C. Coletti

The growth of graphene during Cu-catalyzed chemical vapor deposition was studied using 12CH4 and 13CH4 precursor gasses. We suggest that the growth begins by the formation of a multilayer cluster. This seed increases its size but the growth…

介观与纳米尺度物理 · 物理学 2012-08-29 Martin Kalbac , Otakar Frank , Ladislav Kavan

In this work, we study structural and vibrational properties of multilayer graphene using density-functional theory (DFT) with van der Waals (vdW) functionals. Initially, we analyze how different vdW functionals compare by evaluating the…

介观与纳米尺度物理 · 物理学 2019-11-05 Rafael R. Del Grande , Marcos G. Menezes , Rodrigo B. Capaz

The growth of two-dimensional (2D) transition metal dichalcogenides using chemical vapor deposition has been an area of intense study, primarily due to the scalability requirements for potential device applications. One of the major…

统计力学 · 物理学 2024-11-04 Gagan Kumar , Annwesha Adhikari , Anupam Roy , Sourabh Lahiri

The self-limiting nature of atomic layer deposition (ALD) makes it an appealing option for growing single layers of two-dimensional van der Waals (2D-VDW) materials. In this paper it is demonstrated that a single layer of a 2D-VDW form of…

We report a sequential two-step vapor deposition process for growing mixed-dimensional van der Waals (vdW) materials, specifically Te nanowires (1D) and MoS$_2$ (2D), on a single SiO$_2$ wafer. Our growth technique offers a unique potential…