相关论文: Spin-orbitronics at a topological insulator-semico…
Strong spin-orbit coupling, resulting in the formation of spin-momentum-locked surface states, endows topological insulators with superior spin-to-charge conversion characteristics, though the dynamics that govern it have remained elusive.…
Spin-charge interconversion phenomena at the interface between magnetic materials and topological insulators (TIs) are attracting enormous interest in the research effort towards the development of fast and ultra-low power devices for the…
The process of spin-charge interconversion is critical in modern spintronics. Nonetheless, experiments conducted on a wide variety of magnetic heterostructures consistently report that charge-to-spin and spin-to-charge conversion…
Heterostructures combining topological and non-topological materials constitute the next frontier in the effort to incorporate topological insulators (TIs) into functional electronic devices. We show that the properties of the interface…
We predict that unpolarized charge current injected into a ballistic thin film of prototypical topological insulator (TI) Bi$_2$Se$_3$ will generate a {\it noncollinear spin texture} $\mathbf{S}(\mathbf{r})$ on its surface. Furthermore, the…
The spin-helical surface states in three-dimensional topological insulator (TI), such as Bi2Se3, are predicted to have superior efficiency in converting charge current into spin polarization. This property is said to be responsible for the…
Topological insulators (TIs) are emerging materials for next-generation low-power nanoelectronic and spintronic device applications. TIs possess non-trivial spin-momentum locking features in the topological surface states in addition to the…
Spin-orbital textures in topological insulators due to the spin locking with the electron momentum, play an important role in spintronic phenomena that arise from the interplay between charge and spin degrees of freedom. We have explored…
Single-Dirac-cone topological insulators (TI) are the first experimentally discovered class of three dimensional topologically ordered electronic systems, and feature robust, massless spin-helical conducting surface states that appear at…
Spin-to-charge conversion (SCC) involving topological surface states (TSS) is one of the most promising routes for highly efficient spintronic devices for terahertz (THz) emission. Here, the THz generation generally occurs mainly via SCC…
Introducing, observing, and manipulating individual impurities coupled to a host material offers the opportunity to create new device concepts based on single spin and charge states. Because of potential applications in spintronics and…
Topological insulators (TIs) like Bi$_2$Se$_3$ are a class of material with topologically protected surface states in which spin-momentum locking may enable spin-polarized and defect-tolerant transport. In this work, we achieved the…
We report efficient spin to charge conversion (SCC) in the topological insulator (TI) based heterostructure ($BiSbTe_{1.5}Se_{1.5}/Cu/Ni_{80}Fe_{20}$) by using spin-pumping technique where $BiSbTe_{1.5}Se_{1.5}$ is the TI and…
Topological insulators are materials with an insulating bulk interior while maintaining gapless boundary states against back scattering. Bi$_2$Se$_3$ is a prototypical topological insulator with a Dirac-cone surface state around $\Gamma$.…
When a charge current is injected into the surface state of a topological insulator (TI), the resulting shift of the spin-momentum-locked Fermi surface leads to the appearance of a net spin polarization. The helical spin structure of the…
Majority of the A$_2$B$_3$ type chalcogenide systems with strong spin-orbit coupling, like Bi$_2$Se$_3$, Bi$_2$Te$_3$ and Sb$_2$Te$_3$ etc., are topological insulators. One important exception is Sb$_2$Se$_3$, where a topological…
Interfaces between exfoliated topological insulator Bi2Se3 and several transition metals deposited by sputtering were studied by XPS, SIMS, UPS and contact I-V measurements. Chemically clean interfaces can be achieved when coating Bi2Se3…
Properly tuning the Fermi level position in topological insulators is of vital importance to tailor their spin-polarized electronic transport and to improve the efficiency of any functional device based on them. Here we report the full in…
A scheme is proposed to electrically measure the spin-momentum coupling in the topological insulator surface state by injection of spin polarized electrons from silicon. As a first approach, devices were fabricated consisting of thin…
Over the past decade, topological insulators have received enormous attention for their potential in energy-efficient spin-to-charge conversion, enabled by strong spin-orbit coupling and spin-momentum locked surface states. Despite…