相关论文: Electron-nucleus spin correlation conservation of …

Using only linearly polarized light, we study the possibility of generating spin-polarized photoelectrons from xenon atoms. No net spin polarization is possible, since the xenon ground state is spin-less, but when the photoelectron are…

Hole spins in semiconductors are a potential qubit alternative to electron spins. In nuclear-spin-rich host crystals like GaAs, the hyperfine interaction of hole spins with nuclei is considerably weaker than that for electrons, leading to…

We report on the selective creation of spin filltering regions in non-magnetic InGaAs layers by implantation of Ga ions by Focused Ion Beam. We demonstrate by photoluminescence spectroscopy that spin dependent recombination (SDR) ratios as…

We show that in the presence of ferromagnetic electronic reservoirs and spin-dependent tunnel couplings, molecular vibrations in nonmagnetic single molecular transistors induce an effective intramolecular exchange magnetic field. It…

Motivated by recent all optical NMR experiments\cite{Awschalom1,Awschalom2} on GaAs quantum wells, we propose new experiments that would involve creating spatially modulated nuclear spin profiles. Due to the hyperfine coupling these would…

We construct a spin-drift-diffusion model to describe spin-polarized electron transport in zincblende semiconductors in the presence of magnetic fields, electric fields, and off-diagonal strain. We present predictions of the model for…

The understanding and optimization of solar energy conversion and light emitting devices can greatly benefit from equivalent circuit models describing their response. However, a general model of electron-hole recombination in semiconductors…

We demonstrate an electrically controlled high-spin (S=5/2) to low-spin (S=1/2) transition in a three-terminal device incorporating a single Mn2+ ion coordinated by two terpyridine ligands. By adjusting the gate-voltage we reduce the…

We apply the full power of modern electronic band structure engineering and epitaxial heterostructures to design a transistor that can sense and control a single donor electron spin. Spin resonance transistors may form the technological…

Using a combination of heat pulse and nuclear magnetic resonance techniques we demonstrate that the phase boundary separating the interlayer phase coherent quantum Hall effect at $\nu_T = 1$ in bilayer electron gases from the weakly coupled…

Heat capacity of the nuclear spin system (NSS) in GaAs-based microstructures has been shown to be much greater than expected from dipolar coupling between nuclei, thus limiting the efficiency of NSS cooling by adiabatic demagnetization. It…

Electrical manipulation of spin-polarized current is highly desirable yet tremendously challenging in developing ultracompact spintronic device technology. Here we propose a scheme to realize the all-electrical manipulation of…

The spin relaxation time $T_{1}$ in zinc blende GaN quantum dot is investigated for different magnetic field, well width and quantum dot diameter. The spin relaxation caused by the two most important spin relaxation mechanisms in zinc…

Defect centers in GaN emerge as bright sources of single-photons which recently have been demonstrated to optically interface a localized spin. However, the structure and composition of these defects as well as their efficient excitation…

We present a new application of the Generator Coordinate Method (GCM) as an electronic structure method for strong electron correlation in molecular systems. We identify spin fluctuations as an important generator coordinate responsible for…

We have studied the edge spin accumulation in a high mobility two-dimensional electron gas formed in a symmetric well with two subbands. This study is strongly motivated by the recent experiment of Hernandez et al. [Phys. Rev. B {\bf 88},…

We study theoretically the renormalization of the spin-orbit coupling constant of two-dimensional electrons by electron-electron interactions. We demonstrate that, similarly to the $g$ factor, the renormalization corresponds to the…

We consider the effects of electron-hole interaction, 2D confinement and applied electric field on direct allowed transitions in III-V semiconductors, with InGaAs as a study case. Instead of Coulomb interaction, we use Gaussian potential.…

We describe a new means for electrically creating spin polarization in semiconductors. In contrast to spin injection of electrons by tunneling through a reverse-biased Schottky barrier, we observe spin accumulation at the…

Nuclear spin memories of divalent neutral atoms can allow spin-preserving resolved-sideband cooling in a strong magnetic field [Phys. Rev. Lett. 99, 123001 (2007)]. We present a theory for cooling $^{87}$Sr nuclear-spin qubits in a weak…