中文
相关论文

相关论文: Gallium-Boron-Phosphide (GaBP$_2$): A New III-V Se…

200 篇论文

We present a theoretical study of the electronic structures of freestanding nanowires made from gallium phosphide (GaP)--a III-V semiconductor with an indirect bulk bandgap. We consider [001]-oriented GaP nanowires with square and…

介观与纳米尺度物理 · 物理学 2016-06-21 Gaohua Liao , Ning Luo , Ke-Qiu Chen , H. Q. Xu

Solar cells based on a light absorbing layer of the organometal halide perovskite CH$_3$NH$_3$PbI$_3$ have recently reached 15% conversion efficiency, though how these materials work remains largely unknown. We analyse the electronic…

材料科学 · 物理学 2014-04-24 Federico Brivio , Keith T. Butler , Aron Walsh , Mark van Schilfgaarde

Tuning the bandgap in ternary III-V semiconductors via modification of the composition or the strain in the material is a major approach for the design of optoelectronic materials. Experimental approaches screening a large range of possible…

材料科学 · 物理学 2023-07-10 Badal Mondal , Marcel Kröner , Thilo Hepp , Kerstin Volz , Ralf Tonner-Zech

Two-dimensional (2D) semiconductors with direct and modest bandgap and ultrahigh carrier mobility are highly desired functional materials for nanoelectronic applications. Herein, we predict that monolayer CaP3 is a new 2D functional…

材料科学 · 物理学 2022-05-09 Ning Lu , Zhiwen Zhuo , Hongyan Guo , Ping Wu , Wei Fa , Xiaojun Wu , Xiao Cheng Zeng

Kesterite I$_2$-II-IV-V$_4$ semiconductors are promising solar absorbers for photovoltaics applications. The band gap and it's character, either direct or indirect, are fundamental properties determining photovoltaic-device efficiency. We…

材料科学 · 物理学 2018-08-29 L. Weston , C. Stampfl

Here, the structural, electronic and optical properties of the GaP1-xSbx/Si tandem materials association are determined in view of its use for solar water splitting applications. The GaPSb crystalline layer is grown on Si by Molecular Beam…

With photoelectrochemical water splitting being one of the most promising approaches for clean energy production and storage, the search for efficient photoelectrode materials is greater than ever. Gallium phosphide (GaP) is a…

Organohalide perovskite with a variety of surface structures and morphologies have shown promising potential owing to the choice of the type of heterostructure dependent stability. We systematically investigate and discuss the impact of…

应用物理 · 物理学 2022-07-18 Rahul Singh , Prashant Singh , Ganesh Balasubramanian

Halide perovskites is a new class of semiconductors with exceptional optoelectronic properties. Among many advantages offered by halide perovskites, the bandgap energy can be tuned in a much broader range than what was possible in…

Gallium phosphide (GaP) is an indirect bandgap semiconductor used widely in solid-state lighting. Despite numerous intriguing optical properties---including large $\chi^{(2)}$ and $\chi^{(3)}$ coefficients, a high refractive index ($>3$),…

In$_2$Se$_3$ in the three-dimensional (3D) hexagonal crystal structure with space group $P6_1$ ($\gamma$-In$_2$Se$_3$) has a direct band gap of $\sim$1.8 eV and high absorption coefficient, making it a promising semiconductor material for…

Two-dimensional (2D) semiconductors isoelectronic to phosphorene has been drawing much attention recently due to their promising applications for next-generation (opt)electronics. This family of 2D materials contains more than 400 members,…

介观与纳米尺度物理 · 物理学 2017-08-17 Zhen Zhu , Baojuan Dong , Teng Yang , Zhi-Dong Zhang

Boron arsenide, the typically-ignored member of the III-V arsenide series BAs-AlAs-GaAs-InAs is found to resemble silicon electronically: its Gamma conduction band minimum is p-like (Gamma_15), not s-like (Gamma_1c), it has an X_1c-like…

材料科学 · 物理学 2014-12-18 Gus L. W. Hart , Alex Zunger

The compounds exhibit piezoelectricity, which demands to break inversion symmetry, and then to be a semiconductor. For $\mathrm{Ga_2O_3}$, the orthorhombic case ($\epsilon$-$\mathrm{Ga_2O_3}$) of common five phases breaks inversion…

材料科学 · 物理学 2020-01-29 San-Dong Guo , Hui-Min Du

The electronic structure of pyrite-type cobalt phosphosulfide (CoSP) has been studied using density-functional theory. The calculated band structure reveals the non-magnetic semiconducting character of the compound. The electronic structure…

材料科学 · 物理学 2020-03-24 Abdesalem Houari , Fares Benissad

Double perovskite halides are promising materials for renewable energy production, meeting the criteria to address energy scarcity issues. As a result, studying these halides could be useful for optoelectronic and solar cell applications.…

材料科学 · 物理学 2024-10-21 M. A. Rayhan , M. M. Hossain , M. M. Uddin , S. H. Naqib , M. A Ali

We propose a two-dimensional crystal which possesses low indirect band gaps of 0.55 eV (monolayer) and 0.43 eV (bilayer) and high carrier mobilities similar to those of phosphorene: GeP3. GeP3 has a stable three-dimensional layered bulk…

材料科学 · 物理学 2017-02-02 Yu Jing , Yandong Ma , Yafei Li , Thomas Heine

Layered and two-dimensional (2D) materials such as graphene, boron nitride, transition metal dichalcogenides(TMDCs), and black phosphorus (BP) have intriguing fundamental physical properties and bear promise of numerous important…

Photovoltaic materials facilitate the conversion of sunlight into electricity by harnessing the interaction between light and matter, offering an eco-friendly and cost-efficient energy solution. Combining data-driven approaches with static…

Since the advent of graphene, two-dimensional (2D) materials become very attractive and there is growing interest to explore new 2D beyond graphene. Here, through density functional theory (DFT) calculations, we predict 2D wide-band-gap…

介观与纳米尺度物理 · 物理学 2016-10-31 Xue-Jing Zhang , Bang-Gui Liu
‹ 上一页 1 2 3 10 下一页 ›