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相关论文: Quantum entanglement in the t-J chain: From charge…

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A doped Mott insulator exhibits peculiar properties associated with its singular sign structure. As a case study, we investigate the ground state and excitations of finite-size Heisenberg loops doped with one hole by exact diagonalization.…

强关联电子 · 物理学 2018-10-22 Wayne Zheng , Zheng-Yu Weng

It is generally accepted that doped Mott insulators can be well characterized by the t-J model. In the t-J model, the electron fractionalization is dictated by the phase string effect. We found that in the underdoped regime, the…

强关联电子 · 物理学 2012-01-18 Peng Ye , Chu-Shun Tian , Xiao-Liang Qi , Zheng-Yu Weng

Understanding the doped Mott insulator is a central challenge in condensed matter physics. In this work, we first explicitly identify a new sign structure in the $t$-$t'$-$J$ model on the square lattice that replaces the conventional Fermi…

强关联电子 · 物理学 2024-10-15 Xin Lu , Jia-Xin Zhang , Shou-Shu Gong , D. N. Sheng , Zheng-Yu Weng

We study the effect of Coulomb interaction between two oppositely doped low-dimensional tJ model systems. We exactly show that, in the one-dimensional case, an arbitrarily weak interaction leads to the formation of charge neutral…

强关联电子 · 物理学 2009-11-11 Tiago C. Ribeiro , Alexander Seidel , Jung Hoon Han , Dung-Hai Lee

Recently, we have solved the long-standing problem of connecting the physics of the Mott insulator to the underdoped regime of the t-J model [PRB 82, 014504, 2010]. We have derived a renormalized Hamiltonian valid for small doping (x) which…

超导电性 · 物理学 2010-12-07 Sanjoy K. Sarker , Timothy Lovorn

Following the Bethe ansatz we determine the dynamical spectra of the one-dimensional supersymmetric t-J model. A series of fractionalized excitations are identified through two sets of Bethe numbers. Typical patterns in each set are found…

强关联电子 · 物理学 2026-03-27 Yunjing Gao , Jianda Wu

Surprising properties of doped Mott insulators are at the heart of many quantum materials, including transition metal oxides and organic materials. The key to unraveling complex phenomena observed in these systems lies in understanding the…

强关联电子 · 物理学 2018-12-05 Fabian Grusdt , Zheng Zhu , Tao Shi , Eugene Demler

We show that doped Mott insulators exhibit a collective degree of freedom, not made out of the elemental excitations, because the number of single-particle addition states at low energy per electron per spin is greater than one. The…

强关联电子 · 物理学 2008-05-30 Philip Phillips , Ting-Pong Choy , Robert G. Leigh

We study the triangular $t$-$J$ model with multiple spin exchange interactions using exact diagonalization of small clusters, as a model of monolayer liquid $^3$He. A phase where the energy spectrum suggest the behaviors of spin-charge…

强关联电子 · 物理学 2009-02-12 Yuki Fuseya , Masao Ogata

We study the R\'enyi entanglement entropy (EE) of the two-dimensional $J$-$Q$ model, the emblematic quantum spin model of deconfined criticality at the phase transition between antiferromagnetic and valence-bond-solid ground states.…

强关联电子 · 物理学 2024-10-18 Jonathan D'Emidio , Anders W. Sandvik

A central issue of Mott physics, with symmetries being fully retained in the spin background, concerns the charge excitation. In a two-leg spin ladder with spin gap, an injected hole can exhibit either a Bloch wave or a density wave by…

强关联电子 · 物理学 2018-07-25 Zheng Zhu , D. N. Sheng , Zheng-Yu Weng

This paper presents numerical studies of the single hole tt't''J model that address the interplay between the kinetic energy of itinerant electrons and the exchange energy of local moments as of interest to doped Mott insulators. Due to…

强关联电子 · 物理学 2009-11-11 Tiago C. Ribeiro

We show that effectively cold metastable states in one-dimensional photo-doped Mott insulators described by the extended Hubbard model exhibit spin, charge and $\eta$-spin separation. Namely, their wave functions in the large on-site…

强关联电子 · 物理学 2023-03-14 Yuta Murakami , Shintaro Takayoshi , Tatsuya Kaneko , Andreas M. Läuchli , Philipp Werner

We study a ground-state ansatz for the single-hole doped $t$-$J$ model in two dimensions via a variational Monte Carlo (VMC) method. Such a single-hole wave function possesses finite angular momenta generated by hidden spin currents, which…

强关联电子 · 物理学 2019-07-04 Shuai Chen , Qing-Rui Wang , Yang Qi , D. N. Sheng , Zheng-Yu Weng

Using a nonequilibrium implementation of the extended dynamical mean field theory (EDMFT) we simulate the relaxation after photo excitation in a strongly correlated electron system with antiferromagnetic spin interactions. We consider the…

强关联电子 · 物理学 2018-06-20 Nikolaj Bittner , Denis Golež , Hugo U. R. Strand , Martin Eckstein , Philipp Werner

Triangular lattice quasi-two-dimensional Mott insulators based on BEDT-TTF molecule and its analogies present a possibility to produce exotic phases by coupling charge and spin degrees of freedom. In this work we discuss magnetic properties…

We study the effects of hole doping on one-dimensional Mott insulators with orbital degrees of freedom. We describe the system in terms of a generalized t-J model. At a specific point in parameter space the model becomes integrable in…

强关联电子 · 物理学 2009-01-08 J. Sirker , J. Damerau , A. Klümper

We study the single hole tt't''J-model numerically to address the momentum space anisotropy found in doped Mott insulators. A simple two band picture to understand how the doped hole is screened by the spin background in states of different…

强关联电子 · 物理学 2007-05-23 Tiago C. Ribeiro

Unravelling the nature of doping-induced transition between a Mott insulator and a weakly correlated metal is crucial to understanding novel emergent phases in strongly correlated materials. For this purpose, we study the evolution of…

强关联电子 · 物理学 2018-03-14 Yao Wang , Brian Moritz , Cheng-Chien Chen , Thomas P. Devereaux , Krzysztof Wohlfeld

We investigate the entanglement entropy (EE) of gapped S=1 and $S=1/2$ spin chains with dimerization. We find that the effective boundary degrees of freedom as edge states contribute significantly to the EE. For the $S=1/2$ dimerized…

强关联电子 · 物理学 2007-07-10 Takaaki Hirano , Yasuhiro Hatsugai
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