相关论文: Electron paramagnetic resonance signatures of Co2+…

We investigate the low temperature X-band electron paramagnetic resonance (EPR) of YBa2Cu3O6 compounds with x = 6.0 doped with Dy3+, Tb3+, and Nd3+. The EPR spectra of Dy3+ and Tb3+ have been identified. The EPR of Tb3+ is used also to…

A computational study of the electron paramagnetic resonance (EPR) $g$-tensors and hyperfine tensors in Mg and Zn doped $\beta$-Ga$_2$O$_3$ is presented. While Mg has been found previously to prefer the octahedral site, we find here that Zn…

The present work reports results of the electron paramagnetic resonance (EPR), optical absorption, radio- and photoluminescence (RL and PL) complex study of the Lu2Si2O7:Pr and Lu2Si2O7:Ce pyrosilicate crystals. In both crystals, the EPR…

Gallium oxide (Ga2O3) is a wide-band-gap semiconductor promising for UV sensors and high power transistor applications, with Baliga's figure of merit that far exceeds those of GaN and SiC, second only to diamond. Engineering its band…

A computational study of the Electron Paramagnetic Resonance (EPR) $g$-tensors and hyperfine tensors of Li and Ga vacancies in LiGaO$_2$ is presented. Density Functinal Theory (DFT) calculations are carried out of the Ga and Li vacancies…

Electron paramagnetic resonance (EPR) is a valuable tool for physics, chemistry, biology and medicine, providing complementary spectroscopic information to NMR. It has long been known that EPR at high magnetic fields offers greater spectral…

Electron paramagnetic resonance (EPR) can provide unique insight into the chemical structure and magnetic properties of dopants in oxide and semiconducting materials that are of interest for applications in electronics, catalysis, and…

The intrinsic iron(III) impurity center in polycrystalline lead titanate was investigated by means of high-frequency electron paramagnetic resonance (EPR) spectroscopy in order to determine the local-environment sensitive fine structure…

Beta-Ga2O3 is an ultra-wide bandgap semiconductor with emerging applications in power electronics. The introduction of acceptor dopants yields semi-insulating substrates necessary for thin-film devices. In the present work, exposure of…

Metastable photoinduced Electron Paramagnetic Resonance (EPR) signal at low temperatures is reported in GaN alloyed with boron ($B_{x}Ga_{1-x}N$) epitaxial layers grown at temperatures ranging from 840 {\deg}C to 1090 {\deg}C. An isotropic…

X-band electron paramagnetic resonance on doped Er3+ and Yb3+ ions in Y0.99(Yb,Er)0.01Ba2Cu3OX compounds with different oxygen contents in the wide temperature range (4-120)K have been made. In the superconducting species, the strong…

Photoluminescence, thermally stimulated luminescence (TSL) and EPR characteristics of the Ce3+ doped single crystals of multicomponent Y1Lu2GaxAl5-xO12 and Lu3GaxAl5-xO12 garnets with different Ga contents (x = 0, 1, 2, 3, 4, 5) excited in…

Gallium oxide is a novel advanced material gaining increasing attention for its unique combination of functional properties. It forms in several phases or polymorphs - {\alpha}, {\beta}, {\gamma}, and {\kappa} - having variable properties…

A combined experimental/theoretical study of the EPR in irradiated $\beta$-Ga$_2$O$_3$ is presented. Four EPR spectra, two $S=1/2$ and two $S=1$, are observed after high-energy proton or electron irradiation. One of the S=1/2 spectra (EPR1)…

Beta gallium oxide (\beta-Ga2O3) is an emerging ultrawide band gap (4.5 - 4.9 eV) semiconductor with attractive properties for future power electronics, optoelectronics, and sensors for detecting gases and ultraviolet radiation. \beta-Ga2O3…

The development of semiconductor electronics is shortly reviewed, beginning with the development of germanium devices (band gap $E_g=0.66$ eV) after world war II. Quickly a tendency to alternative materials with wider band gap became…

A resonant inelastic x-ray scattering study of the electronic structure of the semiconductor cuprous oxide, $\rm Cu_2O$, is reported. When the incident x-ray energy is tuned to the Cu K-absorption edge, large enhancements of the spectral…

Using machine learning (ML) approach, we unearthed a new III-V semiconducting material having an optimal bandgap for high efficient photovoltaics with the chemical composition of Gallium-Boron-Phosphide(GaBP$_2$, space group: Pna2$_1$). ML…

Composite oxides have been indeed proved to be valuable materials in optoelectronic applications. The combination of indium oxide and gallium oxide and other materials can lead to enhanced optical and electronic properties, making them…

Gallium nitride (GaN) has emerged as an essential semiconductor material for energy-efficient lighting and electronic applications owing to its large direct bandgap of 3.4 eV. Present GaN/AlGaN heterostructures seemingly feature an…