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相关论文: p-type codoping effect in (Ga,Mn)As: Mn lattice lo…

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The mechanisms underlying the enhancement of magnetic anisotropies (MAs) of Sm ions, owing to valence electrons at the Sm site and the screened nuclear charges of ligands, are clarified using a detailed analysis of crystal fields (CF). In…

材料科学 · 物理学 2022-01-12 Takuya Yoshioka , Hiroki Tsuchiura , Pavel Novák

A GaN film doped with 8.2 % Mn was grown by the molecular-beam-epitaxy technique. Magnetization measurements show that this highly Mn-doped GaN film exhibits ferromagnetism above room temperature. It is also revealed that the…

强关联电子 · 物理学 2009-11-11 S. Yoshii , S. Sonoda , T. Yamamoto , T. Kashiwagi , M. Hagiwara , Y. Yamamoto , Y. Akasaka , K. Kindo , H. Hori

We study the effects of growth temperature, Ga:As ratio and post-growth annealing procedure on the Curie temperature, Tc, of (Ga,Mn)As layers grown by molecular beam epitaxy. We achieve the highest Tc values for growth temperatures very…

材料科学 · 物理学 2009-11-13 M Wang , R P Campion , A W Rushforth , K W Edmonds , C T Foxon , B L Gallagher

The structural transitions, magnetic properties, and electronic structures of Co(Fe)-doped MnNiSi compounds are investigated by x-ray powder diffraction (XRD), differential scanning calorimetry (DSC), magnetic measurements, and…

材料科学 · 物理学 2015-04-17 Y. Li , Z. Y. Wei , E. K. Liu , G. D. Liu , S. G. Wang , W. H. Wang , G. H. Wu

Systematic investigations of the structural and magnetic properties of single crystal (Ga,Mn)N films grown by metal organic vapor phase epitaxy are presented. High resolution transmission electron microscopy, synchrotron x-ray diffraction,…

Ferromagnetic ordering is reported in the post-annealed samples of Co doped n-GaN formed by Co+ implantation. A maximum Curie temperature ~ 250K is recorded for the sample with 8 atomic percent Co. Particle induced x-ray emission-channeling…

We have found high ferromagnetic transition temperature in Mn delta-doped GaAs-based heterostructures grown on GaAs(001) substrates by molecular beam epitaxy. A 0.3 ML Mn d-doped GaAs samples showed high resistivity at low temperature and…

材料科学 · 物理学 2013-05-29 Ahsan M. Nazmul , S. Sugahara , M. Tanaka

Nominally 45 nm GaN:Mg/ 5 nm (Ga,Mn)N / 45 nm GaN:Mg trilayers structures prepared by molecular beam epitaxy on GaN-buffered Al2O3 substrates are investigated to verify whether the indirect co-doping by holes from the cladding layers can…

材料科学 · 物理学 2021-02-25 Katarzyna Gas , Gerd Kunert , Piotr Dluzewski , Rafal Jakiela , Detlef Hommel , Maciej Sawicki

We present a systematic study on the influence of epitaxial strain and hole concentration on the magnetic anisotropy in (Ga,Mn)As at 4.2 K. The strain was gradually varied over a wide range from tensile to compressive by growing a series of…

In this work we are investigating the effect of strain in ultrathin Mn-Ga thin films on the magnetic properties at room temperature. Two different Mn-Ga compositions of which one is furthermore doped with Co were grown on Cr buffered MgO…

材料科学 · 物理学 2015-06-16 Albrecht Köhler , Ivan Knez , Daniel Ebke , Claudia Felser , Stuart S. P. Parkin

The electronic structure and intrinsic magnetic properties of $\text{Fe}_2\text{AlB}_2$-related compounds and their alloys have been investigated using density functional theory. For $\text{Fe}_2\text{AlB}_2$, the crystallographic $a$ axis…

材料科学 · 物理学 2017-03-22 Liqin Ke , Bruce N. Harmon , Matthew J. Kramer

The electronic properties, exchange interactions, finite-temperature magnetism, and transport properties of random quaternary Heusler Ni$_{2}$MnSn alloys doped with Cu- and Pd-atoms are studied theoretically by means of {\it ab initio}…

材料科学 · 物理学 2015-05-19 S. K. Bose , J. Kudrnovský , V. Drchal , I. Turek

We report the effect of co-doping of In and Ga at low concentrations on the structural, electronic, and thermoelectric properties of SnTe based compositions $Sn_{1.03-2x}In_{x}Ga_{x}Te$ (x = 0, 0.01, 0.02, 0.04) prepared by the solid-state…

The evolution of the magnetic and charge transport properties of itinerant magnetic metal MnSi with the substitution of Al and Ga on the Si site is investigated. We observe an increase in unit cell volume indicating that both Al and Ga…

材料科学 · 物理学 2017-01-17 C. Dhital , M. A Khan , M. Saghayezhian , W. A. Phelan , D. P. Young , R. Y. Jin , J. F. DiTusa

We investigate the effects of transition metals (TM) on the electronic doping and scattering in graphene using molecular beam epitaxy combined with in situ transport measurements. The room temperature deposition of TM onto graphene produces…

介观与纳米尺度物理 · 物理学 2010-01-20 K. Pi , K. M. McCreary , W. Bao , Wei Han , Y. F. Chiang , Yan Li , S. -W. Tsai , C. N. Lau , R. K. Kawakami

The effect of Zn substitution in the CuO2 plane on the superconducting transition temperature, Tc, was studied for the La2-xSrxCu1-yZnyO4 and YBa2(Cu1-yZny)3O7-d compounds over a wide range of hole concentration, p, and Zn content (y). Zn…

超导电性 · 物理学 2011-08-09 S. H. Naqib , R. S. Islam

In order to study the magnetic and crystal structures in the Nd{1-x}Sr{x}MnO{3} system, we have peformed neutron diffraction measurements on melt-grown polycrystalline samples with 0.49 < x < 0.75. As a function of hole concentration x, the…

强关联电子 · 物理学 2009-10-31 R. Kajimoto , H. Yoshizawa , H. Kawano , H. Kuwahara , Y. Tokura , K. Ohoyama , M. Ohashi

In this study we report the results of study of novel ternary $Np_2PtGa_3$ compound. The x-ray-powder diffraction analysis reveals that the compound crystallizes in the orthorhombic CeCu$_2$-type crystal structure (space group Imma) with…

强关联电子 · 物理学 2014-12-08 V. H. Tran , J. -C. Griveau , R. Eloirdi , E. Colineau

The collective behavior of spins in a dilute magnetic semiconductor is determined by their mutual interactions and influenced by the underlying crystal structure. Hence, we begin with the atomic quantum-mechanical description of this system…

材料科学 · 物理学 2010-10-12 Agnieszka Werpachowska , Tomasz Dietl

Mn_5Ge_3C_x films with x>0.5 were experimentally shown to exhibit a strongly enhanced Curie temperature T_C compared to Mn_5Ge_3. In this letter we present the results of our first principles calculations within Green's function approach,…

材料科学 · 物理学 2013-05-17 I. Slipukhina , E. Arras , Ph. Mavropoulos , P. Pochet