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Strong light absorption, coupled with moderate carrier transport properties, makes two-dimensional (2-D) layered transition metal dichalcogenide (TMD) semiconductors promising candidates for low intensity photodetection applications.…

介观与纳米尺度物理 · 物理学 2018-02-15 Sangeeth Kallatt , Smitha Nair , Kausik Majumdar

The layered transition metal dichalcogenides (TMDs) have attracted considerable interest due to their unique electronic and optical properties. Here we report electric field induced strong electroluminescence in multi-layer MoS2 and WSe2.…

介观与纳米尺度物理 · 物理学 2015-10-20 Dehui Li , Rui Cheng , Hailong Zhou , Chen Wang , Anxiang Yin , Yu Chen , Nathan O. Weiss , Yu Huang , Xiangfeng Duan

Recently, two-dimensional materials and in particular transition metal dichalcogenides (TMDs) were extensively studied because of their strong light-matter interaction and the remarkable optoelectronic response of their field-effect…

Monolayer transition metal dichalcogenides (TMDCs), like MoS$_2$, MoSe$_2$, WS$_2$, and WSe$_2$, feature direct bandgaps, strong spin-orbit coupling, and exciton-polariton interactions at the atomic scale, which could be harnessed for…

We report a determination of the complex in-plane dielectric function of monolayers of four transition metal dichalcogenides: MoS2, MoSe2, WS2 and WSe2, for photon energies from 1.5 - 3 eV. The results were obtained from reflection spectra…

Monolayer two-dimensional transitional metal dichalcogenides, such as MoS2, WS2 and WSe2, are direct band gap semiconductors with large exciton binding energy. They attract growing attentions for opto-electronic applications including solar…

介观与纳米尺度物理 · 物理学 2017-10-05 Shoujun Zheng , Jinkyu So , Fucai Liu , Zheng Liu , Nikolay Zheludev , Hong Jin Fan

Two dimensional transition metal di-chalcogenides (TMDCs) are promising candidates for ultra-low intensity photodetection. However, the performance of these photodetectors is usually limited by ambience induced rapid performance degradation…

介观与纳米尺度物理 · 物理学 2018-08-30 Krishna Murali , Kausik Majumdar

Atomically thin two-dimensional (2D) transition metal dichalcogenides (TMDs), such as MoS$_2$, are promising candidates for nanoscale photonics because of strong-light matter interactions. However, Fermi level pinning due to metal-induced…

介观与纳米尺度物理 · 物理学 2023-03-07 Hon-Loen Sinn , Aravindh Kumar , Eric Pop , Akm Newaz

The concept of alloy engineering has emerged as a viable technique towards tuning the bandgap as well as engineering the defect levels in two-dimensional transition metal dichalcognides (TMDC). Possibility to synthesize these ultrathin TMDC…

材料科学 · 物理学 2022-07-01 Shubhrasish Mukherjee , Didhiti Bhattacharya , Samit Kumar Ray , Atindra Nath Pal

Transition metal dichalcogenides (TMDs) show great promise as absorber materials in high-specific-power (i.e. high-power-per-weight) solar cells, due to their high optical absorption, desirable band gaps, and self-passivated surfaces.…

应用物理 · 物理学 2023-12-25 Koosha Nassiri Nazif , Frederick U. Nitta , Alwin Daus , Krishna C. Saraswat , Eric Pop

Ultrafast light-matter interaction has emerged as a powerful tool to control and probe the macroscopic properties of functional materials, especially two-dimensional transition metal dichalcogenides which can form different structural…

介观与纳米尺度物理 · 物理学 2023-10-10 XinYu Zhou , H Wang , Q M Liu , S J Zhang , S X Xu , Q Wu , R S Li , L Yue , T C Hu , J Y Yuan , S S Han , T Dong , D Wu , N L Wang

Semiconducting 2D materials, such as molybdenum disulfide (MoS2) and other members of the transition metal dichalcogenide family, have emerged as promising materials for applications in high performance nanoelectronics that exhibit…

应用物理 · 物理学 2019-05-24 David Maeso , Andres Castellanos-Gomez , Nicolas Agraït , Gabino Rubio-Bollinger

The wave-like nature of electrons is evident from quantum interference effects observed during the photoemission process. When there are different nuclei in the unit cell of a crystal and/or structural distortions, photo-electron…

Lateral heterostructures of 2D transition metal dichalcogenide offer a powerful platform to investigate photonic and electronic phenomena at atomically sharp interfaces. However, their controlled engineering, including tuning lateral domain…

The coupling of light to electrical charge carriers in semiconductors is the foundation of many technological applications. Attosecond transient absorption spectroscopy measures simultaneously how excited electrons and the vacancies they…

材料科学 · 物理学 2023-05-03 Z. Schumacher , S. A. Sato , S. Neb , A. Niedermayr , L. Gallmann , A. Rubio , U. Keller

In integrated photonics, specific wavelengths are preferred such as 1550 nm due to low-loss transmission and the availability of optical gain in this spectral region. For chip-based photodetectors, layered two-dimensional (2D) materials…

Transition metal dichalcogenides (TMDCs) have garnered significant interest in optoelectronics, owing to their scalability and thickness-dependent electrical and optical properties. In particular, thin films of TMDCs could be used in…

材料科学 · 物理学 2023-12-19 Enesio Marinho , Cesar E. P. Villegas , Pedro Venezuela , Alexandre R. Rocha

Transition metal dichalcogenides (TMDs) are emerging as promising two-dimensional (2d) semiconductors for optoelectronic and flexible devices. However, a microscopic explanation of their photophysics -- of pivotal importance for the…

Atomically-thin two-dimensional (2D) layered transition metal dichalcogenides (TMDs) have been extensively studied in recent years because of their appealing electrical and optical properties. Here, we report on the fabrication of ReS2…

材料科学 · 物理学 2019-08-17 Enze Zhang , Yibo Jin , Xiang Yuan , Weiyi Wang , Cheng Zhang , Lei Tang , Shanshan Liu , Peng Zhou , Weida Hu , Faxian Xiu

Transition metal dichalcogenides like MoS2 can exist many phases like the semiconducting 2H and the metallic 1T phases which have shown intriguing properties for energy and electrocatalytic applications. However, the 2H and 1T phases…

应用物理 · 物理学 2019-10-10 Qingqing Ke , Xiao Zhang , Abdelnaby M. Elshahawy , Yating Hu , Qiyuan He , Yongqing Cai , John Wang
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