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相关论文: Evolution of structure and magnetism across the me…

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We found direct experimental evidence for an orbital switching in the V 3d states across the metal-insulator transition in VO$_{2}$. We have used soft-x-ray absorption spectroscopy at the V $L_{2,3}$ edges as a sensitive local probe, and…

Frustrated Mott insulators such as transition metal dichalcogenides present an ideal platform for the experimental realization of externally tuned insulator-metal transition. In this paper, we present the first nonperturbative numerical…

强关联电子 · 物理学 2022-06-14 Madhuparna Karmakar , Nyayabanta Swain

Transition metal oxides, in particular, 3d or 4d perovskites have provided diverse emergent physics that originates from the coupling of various degrees of freedom such as spin, lattice, charge, orbital, and also disorder. 5d perovskites…

强关联电子 · 物理学 2016-04-19 Abhijit Biswas , Ki-Seok Kim , Yoon Hee Jeong

The La$_2$CoIr$_{1-x}$Ti$_x$O$_6$ double perovskite series serves as an effective platform for investigating the evolution of magnetic and electronic properties as a function of chemical pressure (doping) or hydrostatic pressure due to the…

We report the structural, magnetic and electrical transport properties of Y$_2$Ir$_{2-x}$Cr$_x$O$_7$ pyrochlore iridates. The chemical doping leads to order of magnitude enhancement of electrical conductivity. The introduction of Cr3+ at…

材料科学 · 物理学 2019-07-24 Vinod Kumar Dwivedi , Soumik Mukhopadhyay

We report on a ternary intermetallic compound, "YMn2Zn20", comprising a pyrochlore lattice made of Mn atoms. A series of In-doped single crystals undergo no magnetic long-range order down to 0.4 K, in spite of the fact that the Mn atom…

强关联电子 · 物理学 2015-05-19 Yoshihiko Okamoto , Takeshi Shimizu , Jun-ichi Yamaura , Yoko Kiuchi , Zenji Hiroi

By analyzing the temperature ($T$) and density ($n$) dependence of the measured conductivity ($\sigma$) of 2D electrons in the low density ($\sim10^{11}$cm$^{-2}$) and temperature (0.02 - 10 K) regime of high-mobility (1.0 and 1.5 $\times…

介观与纳米尺度物理 · 物理学 2009-07-21 L. A. Tracy , E. H. Hwang , K. Eng , G. A. Ten Eyck , E. P. Nordberg , K. Childs , M. S. Carroll , M. P. Lilly , S. Das Sarma

The low-temperature resistivity of a SiGe 2-dimensional hole gas has been studied using the gate controlled carrier density as a parameter. A metal-insulator transition is seen both in the temperature and in the electric field behaviour.…

介观与纳米尺度物理 · 物理学 2007-05-23 V. Senz , U. Doetsch , U. Gennser , T. Ihn , T. Heinzel , K. Ensslin , R. Hartmann , D. Gruetzmacher

Doping the distorted-perovskite Mott insulators LaTiO$_3$ and GdTiO$_3$ with a single SrO layer along the [001] direction gives rise to a rich correlated electronic structure. A realistic superlattice study by means of the charge…

材料科学 · 物理学 2015-05-08 Frank Lechermann , Michael Obermeyer

By carefully analyzing the low temperature density dependence of 2D conductivity in undoped high mobility n-GaAs heterostructures, we conclude that the 2D metal-insulator transition in this system is a density inhomogeneity driven…

介观与纳米尺度物理 · 物理学 2009-11-10 S. Das Sarma , M. P. Lilly , E. H. Hwang , L. N. Pfeiffer , K. W. West , J. L. Reno

Sr$_2$IrO$_4$ is the archetype of the spin-orbit Mott insulator, but the nature of the metallic states that may emerge from this type of insulator is still not very well known. We study with angle-resolved photoemission the…

Here, we report an investigation of structural, magnetic and electronic properties in Y-doped layered iridate (Sr$_{1-x}$Y$_x$)$_2$IrO$_4$ ($x$ $\leq$ 0.1). The parent Sr$_2$IrO$_4$ is a well-studied spin-orbit coupling (SOC) induced…

强关联电子 · 物理学 2021-03-17 Imtiaz Noor Bhatti , A. K. Pramanik

The structural transitions, magnetic properties, and electronic structures of Co(Fe)-doped MnNiSi compounds are investigated by x-ray powder diffraction (XRD), differential scanning calorimetry (DSC), magnetic measurements, and…

材料科学 · 物理学 2015-04-17 Y. Li , Z. Y. Wei , E. K. Liu , G. D. Liu , S. G. Wang , W. H. Wang , G. H. Wu

The electronic structure of VO$_2$ is studied in the frameworks of local density approximation (LDA) and LDA+$U$ to give a quantitative description of the metal-insulator (MI) transition in this system. It is found that, both structural…

材料科学 · 物理学 2007-05-23 Xiangyang Huang , Weidong Yang , Ulrich Eckern

We report on the first experimental observation of an apparent metal insulator transition in a 2D electron gas confined in an InAs quantum well. At high densities we find that the carrier mobility is limited by background charged impurities…

介观与纳米尺度物理 · 物理学 2014-10-15 J. Shabani , S. Das Sarma , C. J. Palmstrøm

We study orbital Mott transition in two dimensional pyrochlore lattice, using a two orbital Hubbard model with only inter-orbital electronic hopping. We use a real space Monte Carlo based approach to study the model at finite temperature,…

强关联电子 · 物理学 2020-04-14 Abhinav Saket , Rajarshi Tiwari

We present a theoretical investigation of the electronic structure of rutile (metallic) and M$_1$ and M$_2$ monoclinic (insulating) phases of VO$_2$ employing a fully self-consistent combination of density functional theory and embedded…

强关联电子 · 物理学 2016-08-03 W. H. Brito , M. C. O. Aguiar , K. Haule , G. Kotliar

Frequency shifts and nuclear relaxations of 13C NMR of the metal-insulator alternating material, (Me-3,5-DIP)[Ni(dmit)2]2, are presented. The NMR absorption lines originating from metallic and insulating layers are well resolved, which…

强关联电子 · 物理学 2009-11-13 Shigeki Fujiyama , A. Shitade , K. Kanoda , Y. Kosaka , H. M. Yamamoto , R. Kato

Spin correlations in metallic and insulating phases of $V_2O_3$ and its derivatives are investigated using magnetic neutron scattering. Metallic samples have incommensurate spin correlations varying little with hole doping. Paramagnetic…

强关联电子 · 物理学 2009-10-28 Wei Bao , C. Broholm , G. Aeppli , P. Dai , J. M. Honig , P. Metcalf

We report the fabrication and measurements of ionic liquid gated Hall bar devices prepared on thin Ca$_3$Ru$_2$O$_7$ flakes exfoliated from bulk single crystals that were grown by a floating zone method. Two types of devices with their…

强关联电子 · 物理学 2015-06-18 Conor P. Puls , Xinxin Cai , Yuhe Zhang , Jin Peng , Zhiqiang Mao , Ying Liu