相关论文: Gating effects in antiferromagnetic CuMnAs
When interacting two-dimensional electrons are placed in a large perpendicular magnetic field, to minimize their energy, they capture an even number of flux quanta and create new particles called composite fermions (CFs). These complex…
Geometrically frustrated magnetic semiconductor $\textrm{CuMnO}_{2}$ has potential applications as photo-catalyst, in photochemical cells and multi-ferroic devices. Electronic band structure in the antiferromagnetic and ferromagnetic phases…
A large spin-dependent and electric field-tunable magnetoresistance of a two-dimensional electron system (2DES) is a key ingredient for the realization of many novel concepts for spin-based electronic devices. The low magnetoresistance…
Spin Hall effect of spin-texture origin is explored theoretically for antiferromagnetic (AF) metals. It is found that a vector chirality formed by the N\'eel vector gives rise to a topological spin Hall effect. This is topological since it…
Recent advances in the physics of current-driven antiferromagnetic skyrmions have observed the absence of a Magnus force. We outline the symmetry reasons for this phenomenon, and show that this cancellation will fail in the case of spin…
Electrons in moir\'e flat band systems can spontaneously break time reversal symmetry, giving rise to a quantized anomalous Hall effect. Here we use a superconducting quantum interference device to image stray magnetic fields in one such…
The ability to modify and tune the spin-wave dispersion is one of the most important requirements for engineering of magnonic networks. In this study we demonstrate the promise of synthetic thin-film hybrids composed of an antiferromagnetic…
In spite of the absence of a macroscopic magnetic moment, an anti-ferromagnet is spin-polarized on an atomic scale. The electric current passing through a conducting anti-ferromagnet is polarized as well, leading to spin-transfer torques…
We present a new ferromagnetic resonance (FMR) method that we term the Ferris FMR. It is wideband, has significantly higher sensitivity as compared to conventional FMR systems, and measures the absorption line rather than its derivative. It…
The Fermi-liquid-like (FL) resistivity recently observed in clean HgBa2CuO4 below the pseudogap temperature was related to carriers at the nodal points on the Fermi surface [4]. We show that this necessitates important implications for the…
Recent demonstrations of electrical detection and manipulation of antiferromagnets (AFMs) have opened new opportunities towards robust and ultrafast spintronics devices. However, it is difficult to establish the connection between the…
Spin-orbit coupling in ferromagnets gives rise to the anomalous Hall effect and the anisotropic magnetoresistance, both of which can be used to create spin-transfer torques in a similar manner as the spin Hall effect. In this paper we show…
Anomalous Hall effect (AHE) emerged in antiferromagnetic metals shows intriguing physics and application potential. In contrast to certain noncollinear antiferromagnets, rutile RuO$_2$ has been proposed recently to exhibit a…
The ability to control electronic properties of a material by externally applied voltage is at the heart of modern electronics. In many cases, it is the so-called electric field effect that allows one to vary the carrier concentration in a…
Exploring novel strategies to manipulate the order parameter of magnetic materials by electrical means is of great importance, not only for advancing our understanding of fundamental magnetism, but also for unlocking potential practical…
Quantum anomalous Hall effect, with a trademark of dissipationless chiral edge states for electronics/spintronics transport applications, can be realized in materials with large spin-orbit coupling and strong intrinsic magnetization. After…
A microscopic calculation is presented for the spin-transfer torques (STT) and damping torques in metallic antiferromagnets (AF). It is found that the sign of the STT is opposite to that in ferromagnets because of the AF transport…
The conductance of graphene subject to a strong, tilted magnetic field exhibits a dramatic change from insulating to conducting behavior with tilt-angle, regarded as evidence for the transition from a canted antiferromagnetic (CAF) to a…
Development of modern spintronic devices requires materials exhibiting specific magnetic effects. In this paper, we investigate a magnetization reversal mechanism in a [Co/Pdx]7/CoO/[Co/Pdy]7 thin-film composite where an antiferromagnet is…
Antiferromagnets are promising candidates for next-generation spintronic devices owing to their negligible stray fields and ultrafast spin dynamics. The noncollinear antiferromagnet $\mathrm{Mn}_{3}\mathrm{Sn}$ exhibits a large anomalous…