相关论文: Gating effects in antiferromagnetic CuMnAs
Antiferromagnets (AFs) are prospective for next-generation high-density and high-speed spintronic applications due to their negligible stray field and ultrafast spin dynamics, notwithstanding the challenges in detecting and manipulating AF…
Manipulating quantum state via electrostatic gating has been intriguing for many model systems in nanoelectronics. When it comes to the question of controlling the electron spins, more specifically, the magnetism of a system, tuning with…
We investigate spin transport through ferromagnetic graphene vertical heterostructures where a sandwiched tunneling layer is either a normal or ferroelectric insulator. We show that the spin-polarization of the tunneling current is…
Altermagnets have recently emerged as a new class of magnetic materials that combine compensated magnetic order with spin-split electronic band structures. In this work, we employ molecular beam epitaxy to grow MnTe thin films with…
Altermagnets host chirally split magnons that promise unique functionalities for information processing. However, their distinctive transport signatures, crucial for experimental identification and manipulation, remain elusive. Here, we…
Antiferromagnetic (AF) compounds possess distinct characteristics that render them promising candidates for advancing the application of spin degrees of freedom in computational devices. For instance, AF materials exhibit minimal…
We demonstrate theoretically that the thermal Hall effect of magnons in collinear antiferromagnetic insulators is an indicator of magnetic and topological phase transitions in the magnon spectrum. The transversal heat current of magnons…
Antiferromagnetic materials have a vanishingly small net magnetization, which generates weak dipolar fields and makes them robust against external magnetic perturbation and rapid magnetization dynamics, as dictated by the geometric mean of…
The Weyl antiferromagnet Mn$_3$Sn has recently attracted significant attention as it exhibits various useful functions such as large anomalous Hall effect that are normally absent in antiferromagnets. Here we report the thin film…
Novel spin transport behavior is theoretically shown to result from replacing the usual metal (or poly-silicon) gate in a silicon field-effect transistor with a ferromagnet, separated from the semiconductor by an ultra-thin oxide. The…
For antiferromagnetically coupled Fe/Cr multilayers the low field contribution to the resistivity, which is caused by the domain walls, is strongly enhanced at low temperatures. The low temperature resistivity varies according to a power…
Electrostatic gating lies in the heart of modern FET-based integrated circuits. Usually, the gate electrode has to be placed very close to the conduction channel, typically a few nanometers, in order to achieve efficient tunability.…
Spin-memristors are a class of materials that can store memories through the control of spins, potentially leading to novel technologies that address the constraints of standard silicon electronics, thereby facilitating the advancement of…
Altermagnets (AMs) are a recently identified class of unconventional collinear compensated antiferromagnets that exhibit momentum-dependent spin splitting despite having zero net magnetization. This unconventional magnetic order gives rise…
Antiferromagnets are emerging as promising alternatives to ferromagnets in spintronics applications. A key feature of antiferromagnets is their anisotropic magnetoresistance (AMR), which has the potential to serve as a sensitive marker for…
The quantum Hall effect is widely used for the investigation of fundamental phenomena, ranging from topological phases to composite fermions. In particular, the discovery of a room temperature resistance quantum in graphene is significant…
Synthetic antiferromagnetic layers (SAF) are incorporated into spin transfer nanopillars giving a layer composition [Co(bottom)/Ru/Co(fixed)]/Cu/Co(free), where square brackets indicate the SAF. The Co(bottom) and Co(fixed) layers are…
We discuss the effects of a strong magnetic field in Quantum Wires. We show how the presence of a magnetic field modifies the role played by % which %coefficients corresponding to electron electron interaction % and the Fermi velocity…
Although a cubic phase of Mn$_3$Ga with an antiferromagnetic order has been theoretically predicted, it has not been experimentally verified in a bulk or film form. Here, we report the structural, magnetic, and electrical properties of…
Magnetic materials exhibiting topological Dirac fermions are attracting significant attention for their promising technological potential in spintronics. In these systems, the combined effect of the spin-orbit coupling and magnetic order…