相关论文: Fast high-power thyristors triggered in impact-ion…

We propose a novel type of ionization front in layered semiconductor structures. The propagation is due to the interplay of band-to-band tunneling and impact ionization. Our numerical simulations show that the front can be triggered when an…

Two-dimensional numerical simulation of switching processes for equivalent silicon insulated gate bipolar transistors of CSTBT-type and hybrid SITh-MOS thyristors (HSMT) has been performed. It is shown that the energy of switching losses…

This paper presents the experimental results of $17~MeV$ proton irradiation on a $60~GHz$ low power, half-duplex transceiver (TRX) chip implemented in $65~nm$ CMOS technology. It supports short range point-to-point data rate up to $6~Gbps$…

The design and performance of a multi-G-sample/s fully-synchronous analog transient waveform recorder I.C. ("SST") with fast and flexible trigger capabilities is presented. Containing 4 channels of 256 samples per channel and fabricated in…

1T-TaS$_2$ exhibits several resistivity phases due to the modulation of charge density wave (CDW). The fact that such phase transition can be driven electrically has attracted a lot of attention in the recent past towards…

We report on the room-temperature switching of 1T-TaS2 thin-film charge-density-wave devices, using nanosecond-duration electrical pulsing to construct their time-resolved current-voltage characteristics. The switching action is based upon…

We report the design-technology co-optimization (DTCO) scheme to develop a 28-nm cryogenic CMOS (Cryo-CMOS) technology for high-performance computing (HPC). The precise adjustment of halo implants manages to compensate the threshold voltage…

The 1T polytype of TaS2 exhibits voltage-triggered threshold switching as a result of a phase transition from nearly commensurate to incommensurate charge density wave states. Threshold switching, persistent above room temperature, can be…

Phase transition materials (PTM) have drawn significant attention in recent years due to their abrupt threshold switching characteristics and hysteretic behavior. Augmentation of the PTM with a transistor has been shown to provide enhanced…

Resistivity of metastable amorphous Ge2Sb2Te5 (GST) measured at device level show an exponential decline with temperature matching with the steady-state thin-film resistivity measured at 858 K (melting temperature). This suggests that the…

While we demonstrate a back-gated (BG) amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) transistors with a nearly ideal subthreshold slope (SS) ~ 60 mV/dec. However, SS degrades when a top-gated (TG) configuration is implemented. The energy…

This letter describes a 40.68 MHz wireless power transfer receiver for implantable applications focused on minimizing tissue heating. The system features a novel power radiated efficiency optimization strategy and a fast-settling active…

Basing on 2D computer simulation of physical processes in high-voltage reversibly-switched dynistors (RSD) important peculiarities of their submicrosecond pulse performance mechanisms have been studied. It is characteristic that on early…

As hyperscale and co-located data centers scale, the electric grid sees an increase in large, voltage-sensitive IT loads with these data center plant size ranging between 500 MW to 2 GW. A sudden loss of these loads as they switch to onsite…

For the Low Emittance Gun (LEG) project at Paul Scherrer Institute a stable and reliable high voltage pulsed generator was needed in order to study low emittance beams generation and transport. The system had to provide variable asymmetric…

Metallic spintronic THz emitters have become well-established for offering ultra-broadband, gap-less THz emission in a variety of excitation regimes, in combination with reliable fabrication and excellent scalability. However, so far, their…

This paper presents the design and characterisation of a front-end prototype ASIC for the ATLAS High Granularity Timing Detector, which is planned for the High-Luminosity phase of the LHC. This prototype, called ALTIROC1, consists of a…

Iridium ions near $4f$-$5s$ level crossings are the leading candidates for a new type of atomic clocks with a high projected accuracy and a very high sensitivity to the temporal variation of the fine structure constant $\alpha$. To identify…

The two-frequency heating technique was studied to increase the beam intensities of highly charged ions provided by the high-voltage extraction configuration (HEC) ion source at the National Institute of Radiological Sciences (NIRS). The…

Gradual switching between multiple resistance levels is desirable for analog in-memory computing using resistive random-access memory (RRAM). However, the filamentary switching of $HfO_x$-based conventional RRAM often yields only two stable…