相关论文: Spin-orbit torque induced electrical switching of …
We simulate the switching behavior of nanoscale synthetic antiferromagnets (SAFs), inspired by recent experimental progress in spin-orbit-torque switching of crystal antiferromagnets. The SAF consists of two ferromagnetic thin films with…
The spin-orbit torque switching of ferrimagnetic Gd$_x$(Fe$_{90}$Co$_{10}$)$_{100-x}$ films was studied for both transition metal (TM)-rich and rare earth (RE)-rich configurations. The spin-orbit torque driven magnetization switching…
We study the triangular antiferromagnet Cu$_3$ in external electric fields, using symmetry group arguments and a Hubbard model approach. We identify a spin-electric coupling caused by an interplay between spin exchange, spin-orbit…
We present a comprehensive theoretical and experimental study of voltage-controlled standing spin waves resonance (SSWR) in PMN-PT/NiFe multiferroic heterostructures patterned into microstrips. A spin-diode technique was used to observe…
Spin-orbit torque enables the electrical control of the orientation of ferromagnets' or antiferromagnets' order parameter. In this work we consider antiferromagnets in which the magnetic sublattices are connected by inversion+time reversal…
Efficient spin/charge interconversion is desired to develop innovative spin-based devices. So far, the interconversion has been performed by using heavy atomic elements, strong spin-orbit interaction of which realizes the interconversion…
We observe the excitation of collective modes in the THz range driven by the recently discovered N\'{e}el spin-orbit torques (NSOT) in the metallic antiferromagnet Mn$_{2}$Au. Temperature dependent THz spectroscopy reveals a strong…
We propose a device that can operate as a magneto-resistive switch or oscillator. The device is based on a spin-thermo-electronic control of the exchange coupling of two strong ferromagnets through a weakly ferromagnetic spacer. We show…
Spin-orbit-torque (SOT) induced magnetization switching in Co/Pt/Co trilayer, with two Co layers exhibiting magnetization easy axes orthogonal to each other is investigated. Pt layer is used as a source of spin-polarized current as it is…
The antiferromagnetic topological insulator MnBi2Te4 (MBT) exhibits an ideal platform to study exotic topological phenomena and magnetic properties. The transport signatures of magnetic phase transitions in the MBT family materials have…
We have explored the possibility to orient spins in antiferromagnetic thin films with low magnetocrystalline anisotropy via the exchange coupling to adjacent antiferromagnetic films with high magnetocrystalline anisotropy. We have used MnO…
The prospect of all electrically controlled writing of ferromagnetic bits is highly desirable for developing scalable and energy-efficient spintronics devices. In the present work, we perform micromagnetic simulations to investigate the…
Current induced spin-orbit torques driven by the conventional spin Hall effect are widely used to manipulate the magnetization. This approach, however, is nondeterministic and inefficient for the switching of magnets with perpendicular…
We consider a quasi one-dimensional configuration consisting of two small pieces of ferromagnetic material separated by a metallic one and contacted by two metallic leads. A spin-polarized current is injected from one lead. Our goal is to…
NiO is a prototypical antiferromagnet with a characteristic resonance frequency in the THz range. From atomistic spin dynamics simulations that take into account the crystallographic structure of NiO, and in particular a magnetic anisotropy…
Antiferromagnetic MnPt exhibits a spin reorientation transition (SRT) as a function of temperature, and off-stoichiometric Mn-Pt alloys also display SRTs as a function of concentration. The magnetocrystalline anisotropy in these alloys is…
We have observed an electronic energy level crossing in a molecular nanomagnet (MNM) using muon-spin relaxation. This effect, not observed previously despite several muon studies of MNM systems, provides further evidence that the spin…
Development of modern spintronic devices requires materials exhibiting specific magnetic effects. In this paper, we investigate a magnetization reversal mechanism in a [Co/Pdx]7/CoO/[Co/Pdy]7 thin-film composite where an antiferromagnet is…
Antiferromagnetic materials feature intrinsic ultrafast spin dynamics, making them ideal candidates for future magnonic devices operating at THz frequencies. A major focus of current research is the investigation of optical methods for the…
Ferromagnets are key materials for sensing and memory applications. In contrast, antiferromagnets that represent the more common form of magnetically ordered materials, have so far found less practical application beyond their use for…