相关论文: Spin-orbit torque induced electrical switching of …
An electrical current can transfer spin angular momentum to a ferromagnet. This novel physical phenomenon, called spin transfer, offers unprecedented spatial and temporal control over the magnetic state of a ferromagnet and has tremendous…
Recent results in electric-field control of magnetism have paved the way for the design of alternative magnetic and spintronic devices with enhanced functionalities and low power consumption. Among the diversity of reported magnetoelectric…
We demonstrate that an all-antiferromagnetic tunnel junction with current perpendicular to the plane geometry can be used as an efficient spintronics device with potential high frequency operation. By using state-of-the-art density…
Antiferromagnetic transition metal oxides are an established and widely studied materials system in the context of spin-based electronics, commonly used as passive elements in exchange bias-based memory devices. Currently, major interest…
We present theoretical description of the precessional switching processes induced by simultaneous application of spin-polarized current and external magnetic field to antiferromagnetic component of the "pinned" layer. We found stability…
Although spin injection at room temperature in an IrMn metallic antiferromagnet strongly depends on the transport regime, and is more efficient in the case of magnonic transport, in this article, we present experimental data demonstrating…
Recent research works have shown that the magnetic order in some antiferromagnetic materials can be manipulated and detected electrically, due to two physical mechanisms: Neel-order spin-orbit torques and anisotropic magnetoresistance.…
We investigate the interplay between the thermodynamic properties and spin-dependent transport in a mesoscopic device based on a magnetic multilayer (F/f/F), in which two strongly ferromagnetic layers (F) are exchange-coupled through a…
Ferrimagnetic insulators (FiMI) have been intensively used in microwave and magneto-optical devices as well as spin caloritronics, where their magnetization direction plays a fundamental role on the device performance. The magnetization is…
Despite extensive researches on manganites owing to widespread use in modern electronics, this class of metal oxides does not cease to surprise with its unique properties and new phenomena. Here we have studied structural and magnetic…
The design of spin-transport based devices such as magnon transistors or spin valves will require multilayer systems composed of different magnetic materials with different physical properties. Such layered structures can show various…
Non-collinear antiferromagnets exhibits richer magneto-transport properties due to the topologically nontrivial spin structure they possess compared to conventional nonmagnetic materials, which allows us to manipulate the charge-spin…
We propose an electrically driven spin injector into normal metals and semiconductors, which is based on a magnetic tunnel junction (MTJ) subjected to a microwave voltage. Efficient functioning of such an injector is provided by…
Spin is an intrinsically quantum property, characterized by angular momentum. A change in the spin state is equivalent to a change in the angular momentum or mechanical torque. This spin-induced torque has been invoked as the intrinsic…
The proximity effect in a model manganite-cuprate system is investigated theoretically. We consider a situation in which spin-polarized electrons in manganite layers antiferromagnetically couple with electrons in cuprate layers as observed…
Molecular nanomagnets show clear signatures of coherent behavior and have a wide variety of effective low-energy spin Hamiltonians suitable for encoding qubits and implementing spin-based quantum information processing. At the nanoscale,…
We employ the recently discovered antiferromagnetic tunneling anisotropic magnetoresistance to study the behavior of antiferromagnetically ordered moments in IrMn exchange coupled to NiFe. Experiments performed by common laboratory tools…
Magnetic switching in antiferromagnets relies on Neel spin orbit torque (NSOT), which originates from a current-induced staggered spin polarization of itinerant electrons. In collinear antiferromagnets, such a response requires the spin…
Magnetoelectric composites are an important class of multiferroic materials that pave the way towards a new generation of multifunctional devices directly integrable in data storage technology and spintronics. This study focuses on…
Electrical manipulation of magnetic order by current-induced spin torques lays the foundation for spintronics. One promising approach is encoding information in the N\'eel vector of antiferromagnetic (AFM) materials, particularly to…