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相关论文: Dynamic exciton funneling by local strain control …

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Atomically thin two-dimensional semiconducting transition metal dichalcogenides (TMDs) can withstand large levels of strain before their irreversible damage occurs. This unique property offers a promising route for control of the optical…

Combining the capabilities of gate defined quantum transport devices in GaAs-based heterostructures and of optically addressed self-assembled quantum dots could open broad perspectives for new devices and functionalities. For example,…

In atomically thin semiconductors, localized exciton (X$_L$) coupled to light shows single quantum emitting behaviors through radiative relaxation processes providing a new class of optical sources for potential applications in quantum…

We have studied the spin-splitting effect in a four-terminal two-dimensional (2D) electron gas system with two potential barriers generated by two surface metal gates and an external perpendicular magnetic field. The calculations show that…

介观与纳米尺度物理 · 物理学 2019-06-26 Zijiang Wang , Jianhong He , Huazhong Guo

We explore the effects of stress on silicon donor bound exciton ($\mathrm{D^0X}$) transitions in bulk silicon and in microfabricated silicon devices. We first study $\mathrm{D^0X}$ transitions in an isotopically purified silicon-28 bulk…

介观与纳米尺度物理 · 物理学 2024-09-02 Pierandrea Conti , Siddharth Dhomkar , Philipp Ross , John Mansir , John J. L. Morton

We demonstrate the continuous tuning of the electronic structure of atomically thin MoS2 on flexible substrates by applying a uniaxial tensile strain. A redshift at a rate of ~70 meV per percent applied strain for direct gap transitions,…

介观与纳米尺度物理 · 物理学 2013-06-24 Keliang He , Charles Poole , Kin Fai Mak , Jie Shan

We demonstrate mechanical modulations of the exciton lifetime by using vibrational strain of a gallium arsenide (GaAs) resonator. The strain-induced modulations have anisotropic dependences on the crystal orientation, which reveals the…

We report on single InGaAs quantum dots embedded in a lateral electric field device. By applying a voltage we tune the neutral exciton transition into resonance with the biexciton using the quantum confined Stark effect. The results are…

介观与纳米尺度物理 · 物理学 2015-05-19 M. Kaniber , M. F. Huck , K. Müller , E. C. Clark , F. Troiani , M. Bichler , H. J. Krenner , J. J. Finley

In semiconductor materials, hot exciton cooling is the process by which highly excited carriers nonradiatively relax to form a band edge exciton. While cooling plays an important role in determining the thermal losses and quantum yield of a…

介观与纳米尺度物理 · 物理学 2023-01-18 Dipti Jasrasaria , Eran Rabani

Two-dimensional group-VI transition metal dichalcogenide semiconductors, such as MoS2, WSe2 and others, exhibit strong light-matter coupling and possess direct band gaps in the infrared and visible spectral regimes, making them potentially…

介观与纳米尺度物理 · 物理学 2020-03-03 Thomas Mueller , Ermin Malic

Recently reported large values of exciton-polariton nonlinearity of transition metal dichalcogenide (TMD) monolayers coupled to optically resonant structures approach the values characteristic for GaAs-based systems in the regime of strong…

介观与纳米尺度物理 · 物理学 2022-05-10 F. A. Benimetskiy , A. Yulin , A. O. Mikhin , V. Kravtsov , I. Iorsh , M. S. Skolnick , I. A. Shelykh , D. N. Krizhanovskii , A. Samusev

We study the interface exciton at lateral type II heterojunctions of monolayer transition metal dichalcogenides (TMDs), where the electron and hole prefer to stay at complementary sides of the junction. We find that the 1D interface exciton…

介观与纳米尺度物理 · 物理学 2018-09-26 Ka Wai Lau , Calvin , Zhirui Gong , Hongyi Yu , Wang Yao

The ultrathin nature and dangling bonds free surface of two-dimensional (2D) semiconductors allow for significant modifications of their band gap through strain engineering. Here, thin InSe photodetector devices are biaxially stretched,…

材料科学 · 物理学 2020-09-23 Qinghua Zhao , Tao Wang , Riccardo Frisenda , Andres Castellanos-Gomez

Search of novel two-dimensional giant Rashba semiconductors is a crucial step in the development of the forthcoming nano-spintronics technology. Using first-principle calculations, we study a stable two-dimensional crystal phase of BiSb…

介观与纳米尺度物理 · 物理学 2017-05-03 Sobhit Singh , Aldo H. Romero

Quantum confinement is the discretization of energy when motion of particles is restricted to length scales smaller than their de Broglie wavelength. The experimental realization of this effect has had wide ranging impact in diverse fields…

Spatiotemporal dynamics of excitons in isolated semiconducting single-walled carbon nanotubes are studied using transient absorption microscopy. Differential reflection and transmission of an 810-nm probe pulse after excitation by a 750-nm…

介观与纳米尺度物理 · 物理学 2013-01-08 Brian A. Ruzicka , Rui Wang , Jessica Lohrman , Shenqiang Ren , Hui Zhao

A giant built-in electric field in the growth direction makes excitons in wide GaN/(Al, Ga)N quantum wells spatially indirect even in the absence of any external bias. Significant densities of indirect excitons can accumulate in…

Exciton condensation--an interaction-driven, macroscopically coherent paired-fermion state--offers the prospect for dissipationless energy transport in solids, akin to that in superconductivity. Although their light effective mass and…

Full control of excitons in 2D materials is an important step to exploit them for applications. Straintronics is one method that can be used to effectively control the movement of excitons. Unfortunately, the effects of non-uniform strain…

材料科学 · 物理学 2024-06-13 Mohammadreza Daqiqshirazi , Thomas Brumme

Two-dimensional (2D) layered materials provide an ideal platform for engineering electronic and optical properties through strain control because of their extremely high mechanical elasticity and sensitive dependence of material properties…

材料科学 · 物理学 2022-09-27 Yueyang Yu , Chuan-Ding Dong , Rolf Binder , Stefan Schumacher , Cun-Zheng Ning