相关论文: Characterization of 0.18{\mu}m CMOS Ring Oscillato…

Extensive electrical characterization of ring oscillators (ROs) made in high-$\kappa$ metal gate 28nm Fully-Depleted Silicon-on- Insulator (FD-SOI) technology is presented for a set of temperatures between 296 and 4.3K. First, delay per…

We report the design-technology co-optimization (DTCO) scheme to develop a 28-nm cryogenic CMOS (Cryo-CMOS) technology for high-performance computing (HPC). The precise adjustment of halo implants manages to compensate the threshold voltage…

Cryogenic CMOS technology (cryo-CMOS) offers a scalable solution for quantum device interface fabrication. Several previous works have studied the characterization of CMOS technology at cryogenic temperatures for various process nodes.…

Cryogenic characterization and modeling of 0.18um CMOS technology (1.8V and 5V) are presented in this paper. Several PMOS and NMOS transistors with different width to length ratios(W/L) were extensively characterized under various bias…

This paper presents a low-area and low-power consumption CMOS differential current controlled oscillator (CCO) for neuromorphic applications. The oscillation frequency is improved over the conventional one by reducing the number of MOS…

We analyze a thermodynamically consistent model of CMOS-based ring oscillators near the onset of coherent voltage oscillations. For driving voltages close to the critical value, we derive the normal form of the Hopf bifurcation that…

A novel power-efficient analog buffer at liquid helium temperature is proposed. The proposed circuit is based on an input stage consisting of two complementary differential pairs to achieve rail-to-rail level tracking. Results of simulation…

High linear voltage references circuitry are designed and implemented in TSMC 0.18$\mu$m CMOS technology. Previous research has proposed the use of MOS transistors operating in the weak inversion region to replace the bipolar devices in…

In this paper we present a simple and efficient built-in temperature sensor for thermal monitoring of standard-cell based VLSI circuits. The proposed smart temperature sensor uses a ring-oscillator composed of complex gates instead of…

Silicon spin qubits are among the most promising candidates for large scale quantum computers, due to their excellent coherence and compatibility with CMOS technology for upscaling. Advanced industrial CMOS process flows allow wafer-scale…

This paper presents a fully-integrated CMOS voltage reference designed in a 90 nm process node using low voltage threshold (LVT) transistor models. The voltage reference leverages subthreshold operation and near-weak inversion…

This paper reports the first cryogenic characterization of 28nm Fully-Depleted-SOI CMOS technology. A comprehensive study of digital/analog performances and body-biasing from room to the liquid helium temperature is presented. Despite a…

This paper presents a fully-integrated CMOS temperature sensor for densely-distributed thermal monitoring in systems on chip supporting dynamic voltage and frequency scaling. The sensor front-end exploits a sub-threshold PMOS-based circuit…

In this paper a CMOS operational amplifier is presented which operates at 2V power supply and 1microA input bias current at 0.8 micron technology using non conventional mode of operation of MOS transistors and whose input is depended on…

High-quality frequency references are the cornerstones in position, navigation and timing applications of both scientific and commercial domains. Optomechanical oscillators, with direct coupling to continuous-wave light and…

As technology scales down, the static power is expected to become a significant fraction of the total power. The exponential dependence of static power with the operating temperature makes the thermal profile estimation of high-performance…

This letter presents a technique that enables very fine tunability of the frequency of Ring Oscillators (ROs). Multiple ROs with different numbers of tunable elements were designed and fabricated in a 65nm CMOS technology. A tunable element…

A Cryogenic Sapphire Oscillator has been implemented at 11.2 GHz using a low-vibration design pulse-tube cryocooler. Compared with a state-of-the-art liquid helium cooled CSO in the same laboratory, the square root Allan variance of their…

Large power consumption of silicon CMOS electronics is a challenge in very-large-scale integrated circuits and a major roadblock to fault-tolerant quantum computation. Matching the power dissipation of Si-MOSFETs to the thermal budget at…

Historically, VLSI designers have focused on increasing the speed and reducing the area of digital systems. However, the evolution of portable systems and advanced Deep Sub-Micron fabrication technologies have brought power dissipation as…