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相关论文: Light effective hole mass in undoped Ge/SiGe quant…

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We have measured the effective mass ($m^*$) of the four flux composite fermion at Landau level filling factor $\nu = 1/4$ ($^4$CF), using the activation energy gaps at the fractional quantum Hall effect (FQHE) states $\nu$ = 2/7, 3/11, and…

介观与纳米尺度物理 · 物理学 2009-10-31 W. Pan , H. L. Stormer , D. C. Tsui , L. N. Pfeiffer , K. W. Baldwin , K. W. West

Strong spin-orbit coupling and relatively weak hyperfine interactions make germanium hole spin qubits a promising candidate for semiconductor quantum processors. The two-dimensional hole gas structure of strained Ge quantum wells serves as…

The isotropic average conduction band minimum electron effective mass in Sn-doped monoclinic single crystal $\beta$-Ga$_2$O$_3$ is experimentally determined by mid-infrared optical Hall effect to be $(0.284\pm0.013)m_{0}$ combining…

The electronic band structure of cubic HfO2 is calculated using an it ab initio all-electron self--consistent linear augmented plane-wave method, within the framework of the local-density approximation and taking into account…

Hole spins have gained considerable interest in the past few years due to their potential for fast electrically controlled qubits. Here, we study holes confined in Ge hut wires, a so far unexplored type of nanostructure. Low temperature…

The effective electron mass parameter in Si-doped Al$_{0.72}$Ga$_{0.28}$N is determined to be $m^\ast=(0.336\pm0.020)\,m_0$ from mid-infrared optical Hall effect measurements. No significant anisotropy of the effective electron mass…

The in-plane effective mass of quantum well states in thin Pb films on a Bi reconstructed Si(111) surface is studied by angle-resolved photoemission spectroscopy. It is found that this effective mass is a factor of three lower than the…

材料科学 · 物理学 2011-07-25 Bartosz Slomski , Fabian Meier , Juerg Osterwalder , J. Hugo Dil

Experimental results obtained previously for the photoluminescence efficiency (PL$_{eff}$) of Ge quantum dots (QDs) are theoretically studied. A $\log$-$\log$ plot of PL$_{eff}$ versus QD diameter ($D$) resulted in an identical slope for…

介观与纳米尺度物理 · 物理学 2015-06-18 E. G. Barbagiovanni , D. J. Lockwood , N. L. Rowell , R. N. Costa Filho , I. Berbezier , G. Amiard , L. Favre , A. Ronda , M. Faustini , D. Grosso

We report the fabrication and characterization of an electrostatic quantum dot in pure Germanium with an integrated charge measurement transistor. The device uses the Al2O3/Germanium interface for the confinement of carriers in the…

介观与纳米尺度物理 · 物理学 2010-09-01 G. Mazzeo , E. Yablonovitch , H. W. Jiang

Using dynamical-mean-field theory, we investigate the electronic properties of quantum wells consisting of a $t^1_{2g}$-electron system with strong correlations. The special focus is on the subband structure of such quantum wells. The…

强关联电子 · 物理学 2015-05-30 Satoshi Okamoto

The coherence of hole spin qubits in germanium planar heterostructures is limited by the hyperfine coupling to the nuclear spin bath due to 29Si and 73Ge isotopes. Thus, removing these nuclear spin-full isotopes is essential to extend the…

We report a magneto-transport study of a two-dimensional hole gas confined to a strained Ge quantum well grown on a relaxed Si0.2Ge0.8 virtual substrate. The conductivity of the hole gas measured as a function of a perpendicular magnetic…

介观与纳米尺度物理 · 物理学 2017-09-13 R. Mizokuchi , P. Torresani , R. Maurand , M. Myronov , S. De Franceschi

We report on the achievement of a two-dimensional electron gas in completely undoped In[0.75]Al[0.25]As/In[0.75]Ga[0.25]As metamorphic quantum wells. Using these structures we were able to reduce the carrier density, with respect to…

材料科学 · 物理学 2009-11-10 F. Capotondi , G. Biasiol , I. Vobornik , L. Sorba , F. Giazotto , A. Cavallini , B. Fraboni

Mid-infrared optical Hall effect measurements are used to determine the free charge carrier parameters of an unintentionally doped wurtzite-structure $c$-plane oriented In$_{0.33}$Ga$_{0.67}$N epitaxial layer. Room temperature electron…

Gate-controllable spin-orbit coupling is often one requisite for spintronic devices. For practical spin field-effect transistors, another essential requirement is ballistic spin transport, where the spin precession length is shorter than…

We theoretically investigate hole spins confined in a gate-defined quantum dot (QD) embedded in GeSn/Ge/GeSn quantum well (QW) structure. Owing to the tensile strain in the Ge layer, the system effectively realizes a light-hole qubit. We…

介观与纳米尺度物理 · 物理学 2025-07-18 Agnieszka Miętkiewicz , Jakub Ziembicki , Krzysztof Gawarecki

We report measurements of the spin susceptibility and the electron effective mass for two-dimensional electrons confined at the interfaces of MgxZn1-xO/ZnO single heterostructures (x = 0.05, 0.08, and 0.11), grown by molecular-beam epitaxy…

The EDELWEISS collaboration reports on the search for Dark Matter (DM) particle interactions via Migdal effect with masses between $32$ MeV$\cdot$c$^{-2}$ to $2$ GeV$\cdot$c$^{-2}$ using a $200$ g cryogenic Ge detector sensitive to…

We measure the effective mass in a dilute two-dimensional electron system in (111)-silicon by analyzing temperature dependence of the Shubnikov-de Haas oscillations in the low-temperature limit. A strong enhancement of the effective mass…

强关联电子 · 物理学 2007-12-11 A. A. Shashkin , A. A. Kapustin , E. V. Deviatov , V. T. Dolgopolov , Z. D. Kvon

We report the results of magnetotransport experiments carried out on low-disorder 2D hole gases (2DHG) in the strongly correlated liquid regime, hosted in dopant-free (100) GaAs/AlGaAs single heterojunctions. Over a wide range of 2DHG…