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相关论文: A Se vacancy induced localized Raman mode in two-d…

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Identifying the point defects in 2D materials is important for many applications. Recent studies have proposed that W vacancies are the predominant point defect in 2D WSe2, in contrast to theoretical studies, which predict that chalcogen…

Among two-dimensional (2D) transition metal dichalcogenides (TMDs), platinum diselenide (PtSe2) stands at a unique place in the sense that it undergoes a phase transition from type-II Dirac semimetal to indirect-gap semiconductor as…

介观与纳米尺度物理 · 物理学 2019-03-26 Husong Zheng , Yichul Choi , Fazel Baniasadi , Dake Hu , Liying Jiao , Kyungwha Park , Chenggang Tao

The ternary chalcogenide Bi2Rh3Se2 was found to be a charge density wave (CDW) superconductor with a 2*2 periodicity. The key questions regarding the underlying mechanism of CDW state and its interplay with lattice and electronic properties…

Typical Raman spectra of transition metal dichalcogenides (TMDs) display two prominent peaks, E2g and A1g, that are well separated from each other. We find that these modes are degenerate in bulk WSe2 yielding one single Raman peak. As the…

材料科学 · 物理学 2013-04-10 H. Sahin , S. Tongay , S. Horzum , W. Fan , J. Zhou , J. Li , J. Wu , F. M. Peeters

Atomic vacancies, such as chalcogen vacancies in 2D TMDs, are important in changing the host material's electronic structure and transport properties. We present a straightforward one-step method for growing monolayer MoS2 utilizing…

介观与纳米尺度物理 · 物理学 2024-05-28 Sudipta Majumder , Vaibhav Walve , Rahul Chand , Gokul M. A. , Sooyeon Hwang , G. V. Pavan Kumar , Aparna Deshpande , Atikur Rahman

Transition metal dichalcogenides (TMDs) have recently attracted attention due to their interesting electronic and optical properties. Fabrication of these materials in a reliable and facile method is important for future applications, as…

TiSe2 is a member of transition metal dichalcogenide family of layered van-der-Waals materials that exhibits some distinctive electronic and optical properties. Here, we perform Raman spectroscopy studies on single crystal TiSe2 to…

强关联电子 · 物理学 2016-10-26 David B. Lioi , David J. Gosztola , Gary P. Wiederrecht , Goran Karapetrov

We report the observation and interpretation of new Raman peaks in few-layer tungsten diselenide (WSe2), induced by the reduction of symmetry going from 3D to 2D. In general, Raman frequencies in 2D materials follow quite closely the…

材料科学 · 物理学 2014-01-06 Xin Luo , Yanyuan Zhao , Jun Zhang , Minglin Toh , Christian Kloc , Qihua Xiong , Su Ying Quek

Charge density wave (CDW) is a unique phenomenon mostly realized in two-dimensional (2D) metallic layered transition metal dichalcogenides (TMDCs). Here, we report on Raman spectroscopy of single crystal 1T-VSe2 and observed signature of…

材料科学 · 物理学 2020-07-24 Juhi Pandey , Ajay Soni

Two-dimensional (2D) flakes of ReSe2 structure were grown by chemical vapor deposition and investigated at room temperature using Raman, photoluminescence, and absorption spectroscopies. The Raman spectra revealed eighteen phonon modes in…

Layered inorganic materials, such as the transition metal dichalcogenides (TMDs), have attracted much attention due to their exceptional electronic and optical properties. Reliable synthesis and characterization of these materials must be…

Here we repair the single-layer MoSe2 field-effect transistors by the EDTA processing, after which the devices' room-temperature carrier mobility increases from 0.1 to over 70cm2/Vs. The atomic dynamics is constructed by the combined study…

介观与纳米尺度物理 · 物理学 2016-01-22 Yuze Meng , Chongyi Ling , Run Xin , Peng Wang , You Song , Haijun Bu , Si Gao , Xuefeng Wang , Fengqi Song , Jinlan Wang , Xinran Wang , Baigeng Wang , Guanghou Wang

We have developed an incandescent Mo source to fabricate large-area single-crystalline MoSe2 thin films. The as-grown MoSe2 thin films were characterized using transmission electron microscopy, energy dispersive X-ray spectroscopy, atomic…

We report a comprehensive Raman study of the phonon behaviour in PdSe$_2$ in the temperature range of 5 K to 300 K. A remarkable change in the Raman spectrum is observed at 120 K: a significant enhancement of the out-of-plane phonon…

Semiconducting transition metal dichalcogenides (TMDCs) have attracted a lot of attention recently, because of their interesting electronic, optical, and mechanical properties. Among large numbers of TMDCs, monolayer of tungsten diselenides…

材料科学 · 物理学 2015-05-19 Bilu Liu , Mohammad Fathi , Liang Chen , Ahmad Abbas , Yuqiang Ma , Chongwu Zhou

Raman scattering excitation (RSE) is an experimental technique in which the spectrum is made up by sweeping the excitation energy when the detection energy is fixed. We study the low-temperature ($T$=5~K) RSE spectra measured on four high…

Wafer-scale growth of two-dimensional semiconductors remains a key challenge for their integration into photonic technologies. While most studies of two-dimensional semiconductors have focused on transition metal dichalcogenides and their…

The two-fold valley degeneracy in two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDCs) (Mo,W)(S,Se)2 is suitable for "valleytronics", the storage and manupulation of information utilizing the valley degree of…

介观与纳米尺度物理 · 物理学 2015-06-24 Shao-Yu Chen , Changxi Zheng , Michael S. Fuhrer , Jun Yan

The structural polymorphism in transition metal dichalcogenides (TMDs) provides exciting opportunities for developing advanced electronics. For example, MoTe$_2$ crystallizes in the 2H semiconducting phase at ambient temperature and…

A detailed first-principle study has been performed to evaluate the electronic and optical properties of single-layer (SL) transition metal dichalcogenides (TMDCs) (MX${}_2$; M= transition metal such as Mo, W and X= S, Se, Te), in the…

介观与纳米尺度物理 · 物理学 2017-07-05 M. A. Khan , Mikhail Erementchouk , Joshua Hendrickson , Michael N. Leuenberger
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