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Achieving highly transmitting molecular junctions through resonant transport at low bias is key to the next-generation low-power molecular devices. Although, resonant transport in molecular junctions was observed by connecting a molecule…

In this study, we employ a computational chemistry-based modeling approach to investigate the adsorption mechanisms of CH$_4$ and CO$_2$ on monolayer GPNL, with a specific focus on their effects on optical adsorption and electrical…

计算物理 · 物理学 2025-02-19 A. Aligayev , F. J. Dominguez-Gutierrez , M. Chourashiya , S. Papanikolaou , Q. Huang

We discuss electron transport in individual nanometer-scale metallic grains at dilution refrigerator temperatures. In the weak coupling regime, the grains exhibit Coulomb blockade and discrete energy levels. Electron-electron interactions…

介观与纳米尺度物理 · 物理学 2015-06-24 D. Davidovic , A. Anaya , A. L. Korotkov , M. Bowman , M. Tinkham

Despite being a layered, easily-exfoliated compound, copper monotelluride (CuTe) features an unusual quasi-one-dimensional charge density wave below $T_{\rm CDW}\approx335$ K. Within a CuTe layer, the electrical resistivity depends…

We have fabricated a variety of novel molecular tunnel junctions based on self-assembled-monolayers (SAM) of two-component solid-state mixtures of molecular wires (1,4 methane benzene-dithiol; Me-BDT with two thiol anchoring groups), and…

材料科学 · 物理学 2009-11-11 Vladimir Burtman , Alexander S. Ndobe , Valy Z. Vardeny

We investigate the effect due to background impurities embedded in the region of two-dimensional electron gases to the magnetotransport. These impurities are achieved by homogeneously incorporating Si atoms in single quantum wells of high…

介观与纳米尺度物理 · 物理学 2015-11-26 E. P. Rugeramigabo , L. Bockhorn , R. J. Haug

We investigated a suspended bilayer graphene where the bottom (top) layer is doped by boron (nitrogen) substitutional atoms by using Density Functional Theory (DFT) calculations. We found that at high dopant concentration (one B-N pair…

材料科学 · 物理学 2016-05-25 Daniele Giofré , Davide Ceresoli , Mario I. Trioni

We study the effect of Coulomb interaction between charge carriers on the properties of graphene monolayer, assuming that the strength of the interaction is controlled by the dielectric permittivity of the substrate on which the graphene…

强关联电子 · 物理学 2013-02-14 P. V. Buividovich , M. I. Polikarpov

We studied the mechanism of half-metallicity (HM) formation in transition metal doped (TM) conjugated carbon based structures by first-principles electronic structure simulations. It is found that the HM is a rather complex phenomenon,…

介观与纳米尺度物理 · 物理学 2015-06-17 Lida Pan , Boqun Song , Jiatao Sun , Lizhi Zhang , Werner Hofer , Shixuan Du , Hong-jun Gao

Two-dimensional (2D) nanoparticle films are a new class of materials with interesting physical properties and applications ranging from nanoelectronics to sensing and photonics. The importance of conducting nanoparticle films makes the…

材料科学 · 物理学 2022-04-12 Lianhua Zhang , Jian Chen , Fei Liu , Zhengyang Du , Yilun Jiang , Min Han , Guanghou Wang

We have studied charge injection across the metal/organic semiconductor interface in bottom-contact poly(3-hexylthiophene) (P3HT) field-effect transistors, with Au source and drain electrodes modified by self-assembled monolayers (SAMs)…

材料科学 · 物理学 2007-05-23 B. H. Hamadani , D. A. Corley , J. W. Ciszek , J. M. Tour , D. Natelson

Two new photo-switchable terphenylthiazoles molecules are synthesized and self-assembled as monolayers on Au and on ferromagnetic Co electrodes. The electron transport properties probed by conductive atomic force microscopy in ultra-high…

We develop a correlation-corrected transport theory in order to predict ionic and polymer transport properties of membrane nanopores in physical conditions where mean-field electrostatics breaks down. The experimentally observed low KCl…

软凝聚态物质 · 物理学 2014-11-06 Sahin Buyukdagli , Tapio Ala-Nissila

We directly image hot spot formation in functioning mono- and bilayer graphene field effect transistors (GFETs) using infrared thermal microscopy. Correlating with an electrical-thermal transport model provides insight into carrier…

介观与纳米尺度物理 · 物理学 2010-12-30 Myung-Ho Bae , Zhun-Yong Ong , David Estrada , Eric Pop

When an ionic liquid adsorbs onto a porous electrode, its ionic arrangement is deeply modified due to a screening of the Coulombic interactions by the metallic surface and by the confinement imposed upon it by the electrode's morphology. In…

The gold film (mean thickness $\approx$ 3.5 nm) was condensed in high vacuum at temperature 70 K on single-crystal sapphire substrate. The transport properties of the film at low temperature reveal simultaneously indications of 1D and 2D…

介观与纳米尺度物理 · 物理学 2015-05-20 E. Yu. Beliayev , B. I. Belevtsev , Yu. A. Kolesnichenko

A new type of disorder-driven electronic percolation transition is found for two-dimensional electron gas (2DEG), based on a quantum cellular automaton model. This transition is shown to be accompanied with a metal-insulator transition, as…

统计力学 · 物理学 2018-10-17 M. N. Najafi

Charge transport in MoS2 in the low carrier density regime is dominated by trap states and band edge disorder. The intrinsic transport properties of MoS2 emerge in the high density regime where conduction occurs via extended states. Here,…

介观与纳米尺度物理 · 物理学 2014-12-08 Leiqiang Chu , Hennrik Schmidt , Jiang Pu , Shunfeng Wang , Barbaros Özyilmaz , Taishi Takenobu , Goki Eda

Graphene devices require electric contacts with metals, particularly with gold. Scanning tunneling spectroscopy studies of electron local density of states performed on mono-, bi- and tri- graphene layer deposited on metallic conductive…

材料科学 · 物理学 2009-01-05 Z. Klusek , P. Dabrowski , P. Kowalczyk , W. Kozlowski , P. Blake , M. Szybowicz , T. Runka , W. Olejniczak

We evaluate the phase-coherent transport of electrons along linear structures of varying length, which are made from two types of potential wells set in either a periodic or a Fibonacci quasi-periodic sequence. The array is described by a…

介观与纳米尺度物理 · 物理学 2009-11-11 M. R. Bakhtiari , P. Vignolo , M. P. Tosi