相关论文: Topological Insulators by Topology Optimization

Three-dimensional topological insulators (TIs) are a perfectly tuned quantum-mechanical machinery in which counter-propagating and oppositely spin-polarized conduction channels balance each other on the surface of the material. This…

Topological Insulator (TI) has recently emerged as an attractive candidate for possible application to spintronic circuits because of its strong spin orbit coupling. TIs are unique materials that have an insulating bulk but conducting…

The properties of topological systems are inherently tied to their dimensionality. Higher-dimensional physical systems exhibit topological properties not shared by their lower dimensional counterparts and, in general, offer richer physics.…

Discovery of novel topological orders of condensed matters is of a significant interest in both fundamental and applied physics due to the associated quantum conductance behaviors and unique symmetry-protected backscattering-immune…

Three-dimensional topological insulators are classified into "strong" (STI) and "weak" (WTI) according to the nature of their surface states. While the surface states of the STI are topologically protected from localization, this does not…

At an interface between a topological insulator (TI) and a conventional superconductor (SC), superconductivity has been predicted to change dramatically and exhibit novel correlations. In particular, the induced superconductivity by an…

Topological insulators are materials with a bulk excitation gap generated by the spin orbit interaction, and which are different from conventional insulators. This distinction is characterized by Z_2 topological invariants, which…

Topological insulators are new class of materials which are characterized by a bulk band gap like ordinary band insulator but have protected conducting states on their edge or surface. These states emerge out due to the combination of…

Induced magnetic order in a topological insulator (TI) can be realized either by depositing magnetic adatoms on the surface of a TI or engineering the interface with epitaxial thin film or stacked assembly of two-dimensional (2D) van der…

Topological insulators (TIs) have been considered as promising candidates for next generation of electronic devices due to their topologically protected quantum transport phenomena. In this work, a scheme for atomic-scale field effect…

Two-dimensional topological insulators (2D TIs) are a highly desired quantum phase but few materials have demonstrated clear signatures of a 2D TI state. It has been predicted that 2D TIs can be created from thin films of three-dimensional…

Topological insulators (TI's) are a new class of quantum matter with extraordinary surface electronic states, which bear great potential for spintronics and error-tolerant quantum computing. In order to put a TI into any practical use,…

Topological insulators (TIs) are characterized by an insulating bulk and symmetry protected bound state on their boundaries. A "strong" topological insulator is characterized by robust conducting states on \emph{all} boundaries protected by…

Topologically protected edge channels show prospects for quantum devices. They have been found experimentally in two-dimensional (2D) quantum spin Hall insulators (QSHIs), weak topological insulators and higher-order topological insulators…

A long-standing problem in the study of topological phases of matter has been to understand the types of fractional topological insulator (FTI) phases possible in 3+1 dimensions. Unlike ordinary topological insulators of free fermions, FTI…

The search for new topological materials and states of matter is presently at the forefront of quantum materials research. One powerful approach to novel topological phases beyond the thermodynamic space is to combine different…

Fractional topological insulators (FTI) are electronic topological phases in $(3+1)$ dimensions enriched by time reversal (TR) and charge $U(1)$ conservation symmetries. We focus on the simplest series of fermionic FTI, whose bulk…

We propose a topology optimisation of acoustic devices that work in a certain bandwidth. To achieve this, we define the objective function as the frequency-averaged sound intensity at given observation points, which is represented by a…

We demonstrate that the charge-spin conversion efficiency of topological insulators (TI) can be experimentally determined by injecting spin-polarized tunneling electrons into a TI. Through a comparative study between bismuth selenide and…

A central property of (Chern) topological insulators is the presence of robust asymmetric transport along interfaces separating two-dimensional insulating materials in different topological phases. A Topological Anderson Insulator is an…