相关论文: From atomic layer to the bulk: low-temperature ato…
Previous studies showed that, as ferroelectric films become thinner, their Curie temperature (Tc) and polarization below Tc both typically decrease. In contrast, a recent experiment [Chang et al., Science 353, 274 (2016)] observed that…
Emergent phenomena arising from nontrivial band structures based on topology and symmetry have been attracting keen interest in contemporary condensed-matter physics. Materials such as SnTe and PbTe are one such example, which demonstrate a…
The ferroelectric semiconductor $\alpha$-SnTe has been regarded as a topological crystalline insulator and the dispersion of its surface states has been intensively measured with angle-resolved photoemission spectroscopy (ARPES) over the…
The integration of ferroelectric and topological materials offers a promising avenue for advancing the development of quantum material devices. In this work, we explore the strong coupling between topological states and ferroelectricity in…
SnTe is a topological crystalline insulator that possesses spin-polarized, Dirac-dispersive surface states protected by crystal symmetry. Multiple surface states exist on the {100}, {110}, and {111} surfaces of SnTe, with the band structure…
We present results of electronic band structure, Fermi surface and electron transport properties calculations in orthorhombic $n$- and $p$-type SnSe, applying Korringa-Kohn-Rostoker method and Boltzmann transport approach. The analysis…
By means of first-principles calculations, we explore systematically the geometric, electronic and piezoelectric properties of multilayer SnSe. We find that these properties are layer-dependent, indicating that the interlayer interaction…
We present an angle-resolved photoemission spectroscopy study of the electronic structure of SnTe, and compare the experimental results to ab initio band structure calculations as well as a simplified tight-binding model of the p-bands. Our…
The electronic band structure of thin films and superlattices made of Heusler compounds with NiTiSn and NiZr$_{0.5}$Hf$_{0.5}$Sn composition was studied by means of polarization dependent hard x-ray photoelectron spectroscopy. The linear…
The LnSbTe family is well known for hosting a plethora of intriguing characteristics stemming from its crystalline symmetry, magnetic structure, 4f electronic correlations and spin orbit coupling (SOC) phenomena. In this paper, we have…
Topological materials ranging from topological insulators to semimetals host many novel quantum phenomena including quantum spin Hall effect and topological Fermi arcs. Transitions between these topological phases have attracted much…
Topological electronic structures are key to the topological classification of quantum materials and play an important role in their physical properties and applications. Recently, SnSe has attracted great research interests due to its…
The electronic structure of Sc1-xVxNy epitaxial films with different alloying concentrations of V are investigated with respect to effects on thermoelectric properties. Band structure calculations on Sc0.75V0.25N indicate that V 3d states…
The temperature renormalization of the bulk band structure of a topological crystalline insulator, SnTe, is calculated using first principles methods. We explicitly include the effect of thermal-expansion-induced modification of electronic…
The 1T polymorph of NbSe$_2$, long confined to the monolayer limit, has remained inaccessible in bulk. Here, we report the realization of bulk 1T-NbSe$_2$ via electrochemical Sn intercalation. Transmission electron microscopy directly…
ZrTe$_5$ is a newly discovered topological material. Shortly after a single layer ZrTe$_5$ had been predicted to be a two-dimensional topological insulator, a handful of experiments have been carried out on bulk ZrTe$_5$ crystals, which…
Epitaxial FeRh(100) films (CsCl structure, $\sim 10\ ML\ $ thick), prepared {\it in-situ} on a W(100) single crystal substrate, have been investigated via valence band and core level photoemission. The presence of the temperature-induced,…
We report that the lowest energy transverse-optic phonon in metallic SnTe softens to near zero energy at the structural transition at $T_C=75 \text{~K}$ and importantly show that the energy of this mode below $T_C$ increases as the…
The realization of multiferroicity in 2D nanomaterials is crucially important for designing advanced nanoelectronic devices such as non-volatile multistate data storage. In this work, the coexistence of ferromagnetism and ferroelectricity…
Nontrivial topology in type-II Dirac semimetal NiTe$_2$ leading to topologically protected surface states give rise to fascinating phenomena holding great promise for next-generation electronic and spintronic devices. Key parameters $-$…