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相关论文: Two-dimensional conducting layer on SrTiO$_{3}$ su…

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Detailed study of the LDOS associated with the surface-state-band near a step-edge of the strong topological-insulator Bi2Te3, reveal a one-dimensional bound state that runs parallel to the stepedge and is bound to it at some characteristic…

强关联电子 · 物理学 2013-05-29 Zhanybek Alpichshev , J. G. Analytis , J. -H. Chu , I. R. Fisher , A. Kapitulnik

During fabrication and scanning-tunneling-microscope (STM) imaging of dangling bonds (DBs) on a hydrogenated silicon surface, we consistently observed halo-like features around isolated DBs for specific imaging conditions. These surround…

介观与纳米尺度物理 · 物理学 2015-03-19 Lucian Livadaru , Jason Pitters , Marco Taucer , Robert A. Wolkow

Charge redistribution across heterojunctions has long been utilized to induce functional response in materials systems. Here we examine how the composition of the terminating surface affects charge transfer across a heterojunction…

材料科学 · 物理学 2023-03-28 M. Chrysler , J. Gabel , T. -L. Lee , Z. Zhu , T. C. Kaspar , P. V. Sushko , S. A. Chambers , J. H. Ngai

Theory of superconductivity generated in one atomic layer thick two dimensional electron gas by a single flat band of high energy longitudinal optical phonons is considered. The polar dielectric $SrTiO_{3}$ (STO) exhibits such an energetic…

超导电性 · 物理学 2016-08-03 Baruch Rosenstein , B. Ya. Shapiro , I. Shapiro , Dingping Li

The two-dimensional electron gas (2DEG) found in KTaO3-based interfaces has garnered attention due to its remarkable electronic properties. In this study, we investigated the conducting system embedded at the Si3N4/Al//KTO(110)…

Several experiments reveal the inhomogeneous character of the superconducting state that occurs when the carrier density of the two-dimensional electron gas formed at the LaXO3/SrTiO3 (X=Al or Ti) interface is tuned above a threshold value…

介观与纳米尺度物理 · 物理学 2015-02-27 S. Caprara , D. Bucheli , N. Scopigno , N. Bergeal , J. Biscaras , S. Hurand , J. Lesueur , M. Grilli

Employing combination of first-principles calculations, low-energy model construction, and variational Monte Carlo solution of the ab-initio derived Hubbard model, we study the effect of hydrogenation in the electronic structure and…

超导电性 · 物理学 2025-06-17 Manoj Gupta , Arun Kumar Maurya , Amal Medhi , Tanusri Saha Dasgupta

Oxide materials are important candidates for the next generation of electronics due to a wide array of desired properties which they can exhibit alone or when combined with other materials. While SrTiO$_3$ (STO) is often considered a…

强关联电子 · 物理学 2019-09-11 Slavko Rebec , Tao Jia , Hafiz Sohail , Makoto Hashimoto , Donghui Lu , Zhixun Shen , Robert Moore

We studied strain-induced polarization and resulting conductivity in the nonpolar/nonpolar CaZrO3/SrTiO3 (CZO/STO) heterostructure (HS) system by means of first-principles electronic structure calculations. By modeling four types of CZO/STO…

材料科学 · 物理学 2019-12-18 Safdar Nazir , Jianli Cheng , Kesong Yang

The $t_{2g}$ band-structure of SrTiO$_3$-based two-dimensional electron gasses (2DEGs), have been found to play a role in features such as the superconducting dome, high-mobility transport, and the magnitude of spin-orbit coupling. This…

In a three-dimensional strong topological insulator, gapless helical surface states appear everywhere on its surface. In the presence of a screw dislocation, gapless helical modes also appear in the vicinity of the corresponding dislocation…

介观与纳米尺度物理 · 物理学 2024-05-28 Tatsuro Sakaguchi , Yositake Takane

The novel electronic properties emerging at interfaces between transition metal oxides, and in particular the discovery of conductivity in heterostructures composed of LaAlO$_3$ (LAO) and SrTiO$_3$ (STO) band insulators, have generated new…

We have investigated electron transport in Nb doped SrTiO$_3$ single crystals for two doping densities. We find that the resistivity and mobility are temperature dependent in both whereas the carrier concentration is almost temperature…

材料科学 · 物理学 2013-02-11 K. G. Rana , V. Khikhlovskyi , T. Banerjee

Bulk and surface state contributions to the electrical resistance of single-crystal samples of the topological Kondo insulator compound SmB6 are investigated as a function of crystal thickness and surface charge density, the latter tuned by…

强关联电子 · 物理学 2015-03-06 Paul Syers , Dohun Kim , Michael S. Fuhrer , Johnpierre Paglione

Oxide two-dimensional electron gases (2DEGs) promise high charge carrier concentrations and low-loss electronic transport in semiconductors such as BaSnO$_{3}$ (BSO). ACBN0 computations for BSO/SrNbO$_{3}$ (SNO) interfaces show…

材料科学 · 物理学 2022-06-27 Sharad Mahatara , Suresh Thapa , Hanjong Paik , Ryan Comes , Boris Kiefer

SrTiO$_{3}$ is one of the most popular insulating single-crystal substrates for various complex-oxide thin film growths, because of its good lattice match with many complex oxide films. Here, we show that a common thin film processing…

材料科学 · 物理学 2011-10-11 Heiko Gross , Namrata Bansal , Yong-Seung Kim , Seongshik Oh

Achieving true bulk insulating behavior in Bi$_2$Se$_3$, the archetypal topological insulator with a simplistic one-band electronic structure and sizable band gap, has been prohibited by a well-known self-doping effect caused by selenium…

材料科学 · 物理学 2017-01-19 Paul Syers , Johnpierre Paglione

By using angle-resolved photoemission spectroscopy combined with first-principles calculations, we reveal that the topmost unit cell of ZrSnTe crystal hosts two-dimensional (2D) electronic bands of topological insulator (TI) state, though…

A metallic surface is realized on stoichiometric and insulating (100) SrTiO$_3$ by Ar$^+$ - ion irradiation. The sheet carrier density and Hall mobility of the layer are $\sim$$4.0$ $\times$ $10^{14}$ $/cm^2$ and $\sim$$2$ $\times$ $10^3$…

强关联电子 · 物理学 2015-06-03 Dushyant Kumar , Z. Hossain , R. C. Budhani

We report on superconductivity in single crystals of SrTiO$_{3-\delta}$ with carrier densities $\textit{n} < 1.4 \times10^{18}cm^{-3}$, where only a single band is occupied. For all samples in this regime, the resistive transition occurs at…