相关论文: A Critical Review of Recent Progress on Negative C…

Due to the absence of any definite signals of new physics at colliders and from precision measurements, it has gradually become more and more popular in the community to utilize the effective field theory (EFT) framework in searching for…

For the last 60 years, advances in conventional computing platforms have been driven by the empirical notion known as Moores law. In its essence, Moores law is a ubiquitous description of the exponential increase in transistor density…

Superconductivity has been investigated for over a century, but there are still open questions about what determines the critical current; the maximum current a superconductor can carry before switching to its normal state. For a given…

The detrimental impact of noise on sensing performance in quantum metrology has been widely recognized by researchers in the field. However, there are no explicit fundamental laws of physics stating that noise invariably weakens quantum…

There is a longstanding debate about the zero-point term in the Johnson noise voltage of a resistor. This term originates from a quantum-theoretical treatment of the Fluctuation-Dissipation Theorem (FDT). Is the zero-point term really…

The quantum computing devices of today have tens to hundreds of qubits that are highly susceptible to noise due to unwanted interactions with their environment. The theory of quantum error correction provides a scheme by which the effects…

This article presents a few selected developments and future ideas related to the measurement of $(n,\gamma)$ data of astrophysical interest at CERN n_TOF. The MC-aided analysis methodology for the use of low-efficiency radiation detectors…

Recent measurements on ultra-thin body Negative Capacitance Field Effect Transistors have shown subthreshold behaviors that are not expected in a classical MOSFET. Specifically, subthreshold swing was found to decrease with increased gate…

Negative capacitance can be used to overcome the lower limit of subthreshold swing (SS) in field effect transistors (FETs), enabling ultralow-power microelectronics, though the concept of ferroelectric negative capacitance remains…

Despite metals are believed to be insensitive to field-effect and conventional Bardeen-Cooper-Schrieffer (BCS) theories predict the electric field to be ineffective on conventional superconductors, a number of gating experiments showed the…

Bottom-up synthesized GNRs and GNR heterostructures have promising electronic properties for high performance field effect transistors (FETs) and ultra-low power devices such as tunnelling FETs. However, the short length and wide band gap…

We report on fabrication of novel field-effect transistors (FETs) based on transition metal dichalcogenides. The unique structure of single crystals of these layered inorganic semiconductors enables fabrication of FETs with intrinsically…

Quantum criticality has attracted considerable attention both theoretically and experimentally as a way to describe part of the phase diagram of strongly correlated systems. A scale-invariant fluctuation spectrum at a quantum critical point…

Two-dimensional (2D) materials are particularly attractive to build the channel of next-generation field-effect transistors (FETs) with gate lengths below 10-15 nm. Because the 2D technology has not yet reached the same level of maturity as…

The past few years have produced major advances in our understanding of the quantum Hall effects---quantized and unquantized. Theories based on a mathematical transformation, where the electrons are replaced by a set of fermions interacting…

The self-friction field of electrons remains one of the fundamental problems in classical and quantum physics, retaining its significance and continuing to constitute a primary focus of both theoretical and experimental research. This study…

Here we propose another type of ferromagnetic semiconductors: ferromagnetic negative charge-transfer insulator (FNCTI). In FNCTI, the negative charge-transfer states strongly enhance the ferromagnetic (FM) exchange interactions and the…

Charge Coupled Devices (CCDs) have been successfully used in several high energy physics experiments over the past two decades. Their high spatial resolution and thin sensitive layers make them an excellent tool for studying short-lived…

We present an analytical device model for a field-effect transistor based on a heterostructure which consists of an array of nanoribbons clad between the highly conducting substrate (the back gate) and the top gate controlling the…

During the last years, Graphene based Field Effect Transistors (GFET) have shown outstanding RF performance; therefore, they have attracted considerable attention from the electronic devices and circuits communities. At the same time,…