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Valleytronics targets the exploitation of the additional degrees of freedom in materials where the energy of the carriers may assume several equal minimum values (valleys) at non-equivalent points of the reciprocal space. In single layers…

Some semiconductors have more than one degenerate minimum of the conduction band in their band structure. These minima-known as valleys-can be used for storing and processing information, if it is possible to generate a difference in their…

介观与纳米尺度物理 · 物理学 2026-02-24 Adam Gindl , Martin Čmel , František Trojánek , Petr Malý , Martin Kozák

Exciton mobility in two-dimensional semiconductors is a key ingredient in materials-based design of optoelectronic functionalities. Monolayer transition metal dichalcogenides (TMDs) set a good test case, with tightly bound excitons and…

材料科学 · 物理学 2026-02-17 Amir Kleiner , Sivan Refaely-Abramson

The electron's charge and spin degrees of freedom are at the core of modern electronic devices. With the in-depth investigation of two-dimensional materials, another degree of freedom, valley, has also attracted tremendous research…

材料科学 · 物理学 2023-09-06 Ping Li , Bang Liu , Wei-Xi Zhang , Zhi-Xin Guo

Regulation of electronic structure and mobility cut-on rate in two-dimensional transition metal dichalcogenides (TMDs) has attracted much attention because of its potential in electronic device design. The anisotropic Raman scattering and…

介观与纳米尺度物理 · 物理学 2017-03-08 Z. H. Zhou , B. C. Wei , Y. M. Min , L. Z. Liu

Two-dimensional semimetals with tilted Dirac cones in the electronic band structure are shown to exhibit spatial separation of carriers belonging to different valleys under illumination. In stark contrast to gapped Dirac materials this…

介观与纳米尺度物理 · 物理学 2023-11-08 A. Wild , E. Mariani , M. E. Portnoi

We simulate the electronic and transport properties of metal/two-dimensional material/metal vertical heterostructures, with a focus on graphene, hexagonal boron nitride and two phases of molybdenum diselenide. Using density functional…

介观与纳米尺度物理 · 物理学 2025-02-06 Gaëlle Bigeard , Zineb Kerrami , François Triozon , Alessandro Cresti

The fundamental properties of valleys are recently attracting growing attention due to electrons in new and topical materials possessing this degree-of-freedom and recent proposals for val-leytronics devices. In silicon MOSFETs, the…

材料科学 · 物理学 2015-08-28 V. T. Renard , I. Duchemin , Y. Niida , A. Fujiwara , Y. Hirayama , K. Takashina

Valley-polarized currents can be generated by local straining of multi-terminal graphene devices. The pseudo-magnetic field created by the deformation allows electrons from only one valley to transmit and a current of electrons from a…

介观与纳米尺度物理 · 物理学 2016-11-18 S. P. Milovanovic , F. M. Peeters

Orbitronics explores the control and manipulation of electronic orbital angular momentum in solid-state systems, opening new pathways for information processing and storage. One significant advantage of orbitronics over spintronics is that…

介观与纳米尺度物理 · 物理学 2025-10-07 Tarik P. Cysne , Luis M. Canonico , Marcio Costa , R. B. Muniz , Tatiana G. Rappoport

Achieving robust and electrically controlled valley polarization in monolayer transition metal dichalcogenides (ML-TMDs) is a frontier challenge for realistic valleytronic applications. Theoretical investigations show that integration of 2D…

Organic semi-conductors have unique electronic properties and are important systems both at the fundamental level and also for their applications in electronic devices. In this article we focus on the particular case of rubrene which has…

材料科学 · 物理学 2019-03-04 A. Missaoui , J. J. Khabthani , G. Trambly de Laissardiere , D. Mayou

Valley magnetic moments play a crucial role in valleytronics in 2D hexagonal materials. Traditionally, based on studies of quantum states in homogeneous bulks, it is widely believed that only materials with broken structural inversion…

介观与纳米尺度物理 · 物理学 2023-09-04 Zheng-Han Huang , Feng-Wu Chen , Yu-Shu G. Wu

Two-dimensional (2D) van der Waals semiconductors are appealing for low-power transistors. Here, we show the feasibility in enhancing carrier mobility in 2D semiconductors through engineering the vertical distribution of carriers confined…

材料科学 · 物理学 2023-06-27 Binxi Liang , Luhao Liu , Jiachen Tang , Jian Chen , Yi Shi , Songlin Li

A large set of recent experiments has been exploring topological transport in bosonic systems, e.g. of photons or phonons. In the vast majority, time-reversal symmetry is preserved, and band structures are engineered by a suitable choice of…

介观与纳米尺度物理 · 物理学 2022-01-05 Tirth Shah , Florian Marquardt , Vittorio Peano

We systematically study the impact of various electron-acoustic-phonon coupling mechanisms on valley physics in two-dimensional materials. In the static strain limit, we find that Dirac cone tilt and deformation potential have analogous…

介观与纳米尺度物理 · 物理学 2020-12-17 Wen-Yu Shan

Valley filters are crucial to any device exploiting the valley degree of freedom. By using an atomistic model, we analyze the mechanism leading to the valley filtering produced by a line-defect in graphene and show how it can be inverted by…

介观与纳米尺度物理 · 物理学 2016-10-11 Lucas H. Ingaramo , Luis E. F. Foa Torres

Interest in high entropy alloy thermoelectric materials is predicated on achieving ultralow lattice thermal conductivity $\kappa\sub{L}$ through large compositional disorder. However, here we show that for a given mechanism, such as mass…

Structural, interfacial, optical, and transport properties of large-area MoS2 ultra-thin films on BN-buffered silicon substrates fabricated using magnetron sputtering are investigated. A relatively simple growth strategy is demonstrated…

Electron's tunneling through potential barrier in monolayer and bilayer graphene lattices is investigated by using full tight-binding model. Emphasis is placed on the resonance tunneling feature and inter-valley scattering probability. It…

介观与纳米尺度物理 · 物理学 2008-08-25 Di Wu , Weiqiang Chen , Fu-Chun Zhang