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We demonstrate ferroelectric (FE) memory transistors on a crystalline silicon channel with endurance exceeding $10^{10}$ cycles. The ferroelectric transistors (FeFETs) incorporate a high-$\kappa$ interfacial layer (IL) of thermally grown…

应用物理 · 物理学 2021-03-17 Ava Jiang Tan , Yu-Hung Liao , Li-Chen Wang , Jong-Ho Bae , Chenming Hu , Sayeef Salahuddin

The coexistence and coupling between magnetization and electric polarization in multiferroic materials provide extra degrees of freedom for creating next-generation memory devices. A variety of concepts of multiferroic or magnetoelectric…

材料科学 · 物理学 2016-06-23 Jianxin Shen , Junzhuang Cong , Dashan Shang , Yisheng Chai , Shipeng Shen , Kun Zhai , Young Sun

The crystal and magnetic structures of single-crystalline hexagonal LuFeO$_3$ films have been studied using x-ray, electron and neutron diffraction methods. The polar structure of these films are found to persist up to 1050 K; and the…

The explosive growth of artificial intelligence and data-intensive computing has brought crucial challenge to modern information science and technology, i.e. conceptually new devices with superior properties are urgently desired. Memristor…

材料科学 · 物理学 2023-09-19 Y. T. Chang , J. F. Wang , W. Wang , C. B. Liu , B. You , M. F. Liu , S. H. Zheng , M. Y. Shi , C. L. Lu , J. -M. Liu

Magnetic fluids are excellent candidates for important research fields including energy harvesting, biomedical applications, soft robotics and exploration. However, notwithstanding relevant advancements such as shape reconfigurability, that…

Ferroelectric devices use their electric polarization ferroic order as the switching and storage physical quantity for memory applications. However, additional built-in physical quantities and memory paradigms are requested for…

材料科学 · 物理学 2014-06-16 B. Kundys , V. Iurchuk , C. Meny , H. Majjad , B. Doudin

SrTiO$_{3}$ is known to be an incipient ferroelectric. It is thought that ferroelectric stability in SrTiO$_{3}$ is suppressed by a delicate competition with quantum fluctuation and antiferrodistortion. The ferroelectric phase can, however,…

材料科学 · 物理学 2014-04-22 Ashima Arora , Goutam Sheet

This study explores the impact of organic cations in bismuth iodide complexes on their memristive behavior in metal-insulator-metal (MIM) type thin-layer devices. The presence of electron-donating and electron withdrawing functional groups…

The coexistence and coupling of magnetic and ferroelectric orderings in single phase multiferroics has evinced enormous scientific interest as it involves breaking of time reversal and space inversion symmetries in the same material. The…

Memristors have been at the forefront of nanoelectronics research for the last decade, offering a valuable component to reconfigurable computing. Their attributes have been studied extensively along with applications that leverage their…

My research is dedicated to the electronic properties of functional oxides. My activity specifically focuses on ferroelectric tunnel junctions in which an ultrathin layer of ferroelectric material is intercalated between two metallic…

材料科学 · 物理学 2020-11-17 Vincent Garcia

Complex ferromagnetic oxides such as La$_{0.67}$Sr$_{0.33}$MnO$_3$ (LSMO) offer pathways for creating energy efficient spintronic devices with new functionalities. LSMO exhibits high-temperature ferromagnetism, half metallicity, sharp…

It is now widely accepted that memristive devices are perfect candidates for the emulation of biological synapses in neuromorphic systems. This is mainly because of the fact that like the strength of synapse, memristance of the memristive…

神经与进化计算 · 计算机科学 2012-11-26 Farnood Merrikh-Bayat , Saeed Bagheri Shouraki , Iman Esmaili Paeen Afrakoti

In this work, we have investigated the coexistance of volatile and non-volatile memristive effects in epitaxial phase-separated La$_{\text{0.5}}$Ca$_{\text{0.5}}$MnO$_{3}$ thin films. At low temperatures (50 K), we observed volatile…

材料科学 · 物理学 2024-08-06 G. A. Ramírez , W. Román Acevedo , M. Rengifo , J. M. Nuñez , M. H. Aguirre , J. Briático , D. Rubi

This paper reports on the temperature evolution of local elastic interactions between ferromagnetic CoFe films and ferroelectric BaTiO3 substrates. Polarization microscopy measurements indicate that growth-induced stripe domains in the CoFe…

材料科学 · 物理学 2014-01-17 Tuomas H. E. Lahtinen , Sebastiaan van Dijken

Proximity to phase transitions (PTs) is frequently responsible for the largest dielectric susceptibilities in ferroelectrics. The impracticality of using temperature as a control parameter to reach those large responses has motivated the…

Machine learning imitates the basic features of biological neural networks to efficiently perform tasks such as pattern recognition. This has been mostly achieved at a software level, and a strong effort is currently being made to mimic…

新兴技术 · 计算机科学 2019-03-06 Javier del Valle , Pavel Salev , Yoav Kalcheim , Ivan K. Schuller

Given the paucity of single phase multiferroic materials (with large ferromagnetic moment), composite systems seem an attractive solution in the quest to realize magnetoelectric cou-pling between ferromagnetic and ferroelectric order…

介观与纳米尺度物理 · 物理学 2014-09-15 P. Jain , Q. Wang , M. Roldan , A. Glavic , V. Lauter , C. Urban , Z. Bi , T. Ahmed , J. Zhu , M. Varela , Q. Jia , M. R. Fitzsimmons

Dielectric capacitors are essential for energy storage systems due to their high-power density and fast operation speed. However, optimizing energy storage density with concurrent thermal stability remains a substantial challenge. Here, we…

Since the recent discoveries, ferroelectric nematics became of upmost interest due to their outstanding ferroelectric properties. In this work, we prepared a series of polar molecules revealing a ferroelectric nematic phase (NF) with a very…