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Optical properties of semiconducting monolayer transition metal dichalcogenides have received a lot of attention in recent years, following the discovery of the valley selective optical population of either $K_{+}$ or $ K_{-}$ valleys at…

其他凝聚态物理 · 物理学 2022-05-17 Andrey Geondzhian , Angel Rubio , Massimo Altarelli

In transition metal dichalcogenides, the valley degree of freedom directly couples valley-polarised excitons - excited by circularly polarised light - to valley-dependent chiral photons, enabling ultrafast light-driven valleytronics.…

Single layers of transition metal dichalcogenides are two-dimensional direct bandgap semiconductors with degenerate, but inequivalent, `valleys' in the electronic structure that can be selectively excited by polarized light. Coherent…

In monolayer transition metal dichalcogenides time-reversal symmetry, combined with space-inversion symmetry, defines the spin-valley degree of freedom. As such, engineering and control of time-reversal symmetry by optical or magnetic…

Two-dimensional transition metal dichalcogenide (TMD) semiconductors provide a unique possibility to access the electronic valley degree of freedom using polarized light, opening the way to valley information transfer between distant…

Monolayer transition metal dichalcogenides (TMDCs) constitute the core group of materials in the emerging semiconductor technology of valleytronics. While the coupled spin-valley physics of pristine TMDC materials and their heterstructures…

介观与纳米尺度物理 · 物理学 2023-11-14 Chumki Nayak , Suvadip Masanta , Sukanya Ghosh , Shubhadip Moulick , Atindra Nath Pal , Indrani Bose , Achintya Singha

Manipulating spin polarization of electrons in nonmagnetic semiconductors by means of electric fields or optical fields is an essential theme of the conceptual nonmagnetic semiconductor-based spintronics. Here we experimentally demonstrate…

介观与纳米尺度物理 · 物理学 2016-03-31 Xie Lu , Xiaodong Cui

Valleytronics targets the exploitation of the additional degrees of freedom in materials where the energy of the carriers may assume several equal minimum values (valleys) at non-equivalent points of the reciprocal space. In single layers…

Recent results on the optical properties of mono- and few-layers of semiconducting transition metal dichalcogenides are reviewed. Experimental observations are presented and discussed in the frame of existing models, highlighting the limits…

介观与纳米尺度物理 · 物理学 2017-09-19 M. Koperski , M. R. Molas , A. Arora , K. Nogajewski , A. O. Slobodeniuk , C. Faugeras , M. Potemski

Chiral interaction between light and two-dimensional transition metal dichalcogenides (2D-TMDs) has recently drawn enormous scientific attention. The optical selection rules of these atomically thin semiconductors allow the attribution of a…

光学 · 物理学 2021-06-08 Irina Komen , Sabrya E. van Heijst , Sonia Conesa-Boj , L. Kuipers

Alloyed transition metal dichalcogenides provide an opportunity for coupling band engineering with valleytronic phenomena in an atomically-thin platform. However, valley properties in alloys remain largely unexplored. We investigate the…

介观与纳米尺度物理 · 物理学 2020-01-17 Sean M. Oliver , Joshua Young , Sergiy Krylyuk , Thomas L. Reinecke , Albert V. Davydov , Patrick M. Vora

Atomically thin crystals of transition metal dichalcogenides (TMDs) host excitons with strong binding energies and sizable light-matter interactions. Coupled to optical cavities, monolayer TMDs routinely reach the regime of strong…

The two dimensional layered transition metal dichalcogenides provide new opportunities in future valley based information processing and also provide ideal platform to study excitonic effects. At the center of various device physics toward…

材料科学 · 物理学 2017-04-05 Dong Sun , Jiawei Lai , Junchao Ma , Qinsheng Wang , Jing Liu

In this technical review we give an introduction to optical spectroscopy for layered materials as a powerful, non-invasive tool to access details of the electronic band structure and crystal quality. Potential applications in photonics and…

材料科学 · 物理学 2020-12-18 Shivangi Shree , Ioannis Paradisanos , Xavier Marie , Cedric Robert , Bernhard Urbaszek

Valleytronics is one of the breaking-through to the technology of electronics, which provides a new degree of freedom to manipulate the properties of electrons. Combining DFT calculations, optical absorption analysis and the linear…

材料科学 · 物理学 2017-08-16 Tiantian Zhang , Sijie Zhang , Gang Xu , Nanlin Wang , Zhong Fang

2D materials with broken inversion symmetry posses an extra degree of freedom, the valley pseudospin, that labels in which of the two energy-degenerate crystal momenta, K or K', the conducting carriers are located. It has been shown that…

量子物理 · 物理学 2023-09-20 Rui E. F. Silva , Misha Ivanov , Álvaro Jiménez-Galán

Two-dimensional transition metal dichalcogenides (TMDC) have shown promise for various applications in optoelectronics and so-called valleytronics. Their operation and performance strongly depend on the stacking of individual layers. Here,…

材料科学 · 物理学 2020-09-28 J. E. Zimmermann , B. Li , J. Hone , U. Höfer , G. Mette

Electron valleys in transition-metal dichalcogenide monolayers drive novel physics and allow designing multifunctional architectures for applications. We propose to manipulate the electron valleys in these systems for spin/valley filter and…

介观与纳米尺度物理 · 物理学 2021-11-15 Ao Zhang , Kaike Yang , Yun Zhang , Anlian Pan , Mingxing Chen

Motivated by the triumph and limitation of graphene for electronic applications, atomically thin layers of group VI transition metal dichalcogenides are attracting extensive interest as a class of graphene-like semiconductors with a desired…

介观与纳米尺度物理 · 物理学 2013-04-17 Hualing Zeng , Gui-Bin Liu , Junfeng Dai , Yajun Yan , Bairen Zhu , Ruicong He , Lu Xie , Shijie Xu , Xianhui Chen , Wang Yao , Xiaodong Cui

The valley degree of freedom of electrons in materials promises routes toward energy-efficient information storage with enticing prospects towards quantum information processing. Current challenges in utilizing valley polarization are…

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