相关论文: Designing multi-level resistance states for multi-…

We report on non-volatile memory devices based on multifunctional manganites. The electric field induced resistive switching of Ti/$La_{1/3}$$Ca_{2/3}$Mn$O_3$/n-Si devices is explored using different measurement protocols. We show that…

A comprehensive analysis of half-doped manganites is presented using Monte Carlo simulations applied to the double-exchange model with cooperative Jahn-Teller lattice distortions in two dimensions. A variety of novel results are reported:…

We discuss our very interesting experimental observation that the low-temperature two-phase coexistence in half-doped manganites is multi-valued (at any field) in that we can tune the coexisting antiferromagnetic-insulating(AF-I) and the…

Phase-separated manganites provide a unique platform to study the dynamics of competing electronic and structural orders in correlated systems. In La0.275Pr0.35Ca0.375MnO3 (LPCMO), we use temperature-cycling Raman spectroscopy to uncover a…

In this report, we study in detail the competitor to the FM metallic state at electronic density $x=1/4$ in the CMR regime using the two-orbital double-exchange model with Jahn-Teller lattice distortions on two-dimensional clusters,…

Colossal enhancement of magnetoresistance has been achieved over a broad temperature range which extends upto the room temperature, in ferromagnetic metal-charge ordered insulator manganite multi-layers. The artificially created phase…

An analysis of the properties of half-doped manganites is presented. We build up the phase diagram of the system combining a realistic calculation of the electronic properties and a mean field treatment of the temperature effects. The…

We study the resistive switching (RS) mechanism as way to obtain multi-level memory cell (MLC) devices. In a MLC more than one bit of information can be stored in each cell. Here we identify one of the main conceptual difficulties that…

Analog memory is of great importance in neurocomputing technologies field, but still remains difficult to implement. With emergence of memristors in VLSI technologies the idea of designing scalable analog data storage elements finds its…

The novel series of hole-doped quadruple manganite perovskites Hg$_{1-x}$Na$_x$Mn$_3$Mn$_4$O$_{12}$ (HNMO) has been synthesized and its charge and orbital order behavior investigated through high-resolution synchrotron powder x-ray…

Extensive experimental results are presented on the multi-scale phase modulation phenomena observed in colossal magnetoresistance manganites. Two key types of phase inhomogeneities directly relevant to the colossal magnetoresistance (CMR)…

The Monte Carlo Ferromagnetic Ising model was used to study the electrical properties of manganese oxides due to the charge ordering phase occurring at doping, x = 0.5. The half-doped manganites have an insulator antiferromagnetic ground…

In this work, we have investigated the coexistance of volatile and non-volatile memristive effects in epitaxial phase-separated La$_{\text{0.5}}$Ca$_{\text{0.5}}$MnO$_{3}$ thin films. At low temperatures (50 K), we observed volatile…

We use neutron scattering to study the spin and charge/orbital ordering (CO-OO) in the nearly half-doped perovskite manganite $Pr_{0.55}(Ca_{0.8}Sr_{0.2})_{0.45}MnO_3$ (PCSMO). On cooling from room temperature, PCSMO first enters into a…

We show that applying strain on half-doped manganites makes it possible to tune the system to the proximity of a metal-insulator transition and thereby generate a colossal magnetoresistance (CMR) response. This phase competition not only…

The leading electronic interactions governing the local physics of the CE phase of half-doped manganites are extracted from correlated ab initio calculations performed on an embedded cluster. The electronic structure of the low-energy…

The coupling between the electrical transport properties of La2/3Sr1/3MnO3 (LSMO) thin films and structural phase transitions of SrTiO3 (STO) substrates at Ts = 105 K has been investigated. We found that the electrical resistivity of LSMO…

We discuss the phase diagram of the two-orbital model of half-doped manganites by calculating self-consistently the Jahn-Teller (JT) distortion patterns, charge, orbital and magnetic order at zero temperature. We analyse the instabilities…

In view of recent experiments, indicating the spatial coexistence of conducting and insulating regions in the ferromagnetic metallic phase of doped manganites, we propose a refined mixed-phase description. The model is based on the…

One of the most widely used active materials for phase-change memories (PCM), the ternary stoichiometric compound Ge$_2$Sb$_2$Te$_5$ (GST), has a low crystallization temperature of around 150$^\circ$C. One solution to achieve higher…