相关论文: Threshold Interface Magnetization Required to Indu…
Laser-induced magnetization precession of an in-plane magnetized Pt/Co/Pt film with perpendicular interface anisotropy was studied using time resolved magneto-optical Kerr effect. An additional $\pi$ shift in the phase of precession is…
Altermagnets is a class of antiferromagnetic materials which has electron bands with lifted spin degeneracy in momentum space but vanishing net magnetization and no stray magnetic fields. Because of these properties, altermagnets have…
We study the proximity-induced superconducting correlations in a normal metal connected to a superconductor when the interface between them is spin-active and the normal metal is ballistic or diffusive. Remarkably, for any interface spin…
In the present work, interfacial magnetism at metal organic interface is probed using an isotope sensitive interface resolved nuclear resonance scattering technique which is made depth selective under x-rays standing wave conditions. Using…
The transfer matrix method (TMM) is widely used to analyze the transport properties of one-dimensional or quasi-one-dimensional systems, such as nanostructures and layered materials in spintronics. However, its application in quantifying…
Boundary conditions for order parameters at an interface between ferromagnetic (FM) and two-sublattice antiferromagnetic (AFM) materials were obtained in the continuous medium approximation similarly to the approach which allows one to take…
We derive a general microscopic expression for the non-linear diamagnetic current in a clean superconductor-insulator-normal metal structure with an arbitrary interface transmission. In the absence of electron-electron interactions in the…
Interest to ferroelectric materials has been increased significantly in last decades due to development of new generation of nonlinear optical and data storage devices. Scanning probe microscopy (SPM) can be used both for study of domain…
We present a consistent microscopic study of spin pumping effects for both metallic and insulating ferromagnets. As for metallic case, we present a simple quantum mechanical picture of the effect as due to the electron spin flip as a result…
We report on first-principles calculations of spin-dependent properties in graphene induced by its interaction with a nearby magnetic insulator (Europium oxide, EuO). The magnetic proximity effect results in spin polarization of graphene…
We report magnetoresistance measurements on thin Pt bars grown on epitaxial (001) and (111) CoFe2O4 (CFO) ferrimagnetic insulating films. The results can be described in terms of the recently discovered spin Hall magnetoresistance (SMR).…
The time and temperature dependence of the field-cooled magnetization of a three dimensional Ising spin glass, Fe_{0.5}Mn_{0.5}TiO_{3}, has been investigated. The temperature and cooling rate dependence is found to exhibit memory phenomena…
We study the spin Hall magnetoresistance (SMR) and the magnon spin transport (MST) in Pt/Y3Fe5O12(YIG)-based devices with intentionally modified interfaces. Our measurements show that the surface treatment of the YIG film results in a…
Time-dependent Thermoremanent Magnetization (TRM) studies have been instrumental in probing energy dynamics within the spin glass phase. In this paper, we will review the evolution of the TRM experiment over the last half century and…
Advances in scaling down heterostructures and having an improved interface quality together with atomically-thin two-dimensional materials suggest a novel approach to systematically design materials. A given material can be transformed…
It was experimentally observed that both magnetic anisotropy and spin-orbit interaction strength change when the magnetization of the nanomagnet is reversed. This indicates a variation in spin-orbit interaction strength depending on whether…
Diluted magnetic semiconductors (DMS) have attracted significant attention for their potential in spintronic applications. Particularly, magnetically-doped GaN is highly attractive due to its high relevance for the CMOS industry and the…
We consider the scaling limit of a generic ferromagnetic system with a continuous phase transition, on the half plane with boundary conditions leading to the equilibrium of two different phases below criticality. We use general properties…
The interface between a ferro-/ferrimagnetic insulator and a normal metal can support spin currents polarized collinear with and perpendicular to the magnetization direction. The flow of angular momentum perpendicular to the magnetization…
Spin-polarized scanning tunneling microscopy investigations reveal a significant increase of the magnetic period of spin spirals in three-atomic-layer-thick Fe films on Ir(111), from about 4nm at 8K to about 65nm at room temperature. We…