相关论文: Gate-tunable Electronic Transport in p-type GaSb Q…
We report an experimental study of one-dimensional (1D) electronic transport in an InSb semiconducting nanowire. Three bottom gates are used to locally deplete the nanowire creating a ballistic quantum point contact with only a few…
The complex band structure, large spin-orbit induced band splitting, and heavy effective mass of two-dimensional (2D) hole systems hosted in GaAs quantum wells render them rich platforms to study many-body physics and ballistic transport…
Electronic carriers in graphene show a high carrier mobility at room temperature. Thus, this system is widely viewed as a potential future charge-based high-speed electronic-material to complement- or replace- silicon. At the same time, the…
Topological superconductivity emerges in chains or arrays of magnetic atoms coupled to a superconductor. However, the external controllability of such systems with gate voltages is detrimental for their future implementation in a…
We perform tilt-field transport experiment on inverted InAs/GaSb which hosts quantum spin Hall insulator. By means of coincidence method, Landau level (LL) spectra of electron and hole carriers are systematically studied at different…
We analyze the magnetoconductance of two-dimensional electron and hole gases (2DEGs) subject to a parallel magnetic field. It is shown that, for confining potential wells which are symmetric with respect to spatial inversion, a…
We present here our recent quantum transport results around the charge neutrality point (CNP) in a type-II InAs/GaSb field-effect transistor. At zero magnetic field, a conductance minimum close to 4e^2/h develops at the CNP and it follows…
Spin-orbit splitting of conduction band in HgTe quantum wells was studied experimentally. In order to recognize the role of different mechanisms, we carried out detailed measurements of the Shubnikov-de Haas oscillations in gated structures…
The discovery of the quantum spin Hall effect led to the exploration of the electronic transport for spintronic devices. Here, we theoretically investigated the electronic conductance in large-gap realistic quantum spin Hall system,…
We present a multi-probe transport analysis that effectively separates bulk and edge currents in large Hall bar devices with standard geometries. Applied to transport measurements on all possible four-probe configurations of six-probe Hall…
We present the first experimental study of the double-quantum-well (DQW) system made of 2D layers with inverted energy band spectrum: HgTe. The magnetotransport reveals a considerably larger overlap of the conduction and valence subbands…
Semiconductor InSb nanowires present a highly intriguing platform with immense potential for applications in spintronics and topological quantum devices. The narrow band gap exhibited by InSb allows for precise tuning of these nanowires,…
Anisotropic charge transport is observed in a two-dimensional (2D) hole system in a perpendicular magnetic field at filling factors nu=7/2, nu=11/2, and nu=13/2 at low temperature. In stark contrast, the transport at nu=9/2 is isotropic for…
We report on two sub-band transport in double gate SiO$_2$-Si-SiO$_2$ quantum well with 14 nm thick Si layer at 270 mK. At symmetric well potential the experimental sub-band spacing changes monotonically from 2.3 to 0.3 meV when the total…
Interest in ZrTe5 has been reinvigorated in recent years owing to its potential for hosting versatile topological electronic states and intriguing experimental discoveries. However, the mechanism of many of its unusual transport behaviors…
InSb$_{1-x}$As$_{x}$ is a promising material system for exploration of topological superconductivity in hybrid superconductor/semiconductor devices due to large effective g-factor and enhanced spin-orbit coupling when compared to binary…
Energy spectra both of the conduction and valence bands of the HgTe quantum wells with a width close to the Dirac point were studied experimentally. Simultaneous analysis of the Shubnikov-de Haas oscillations and Hall effect over a wide…
Two-dimensional (2D) semiconductors show great potential to sustain Moore's law in the era of ultra-scaled electronics. However, their scalable applications are severely constrained by low hole mobility. In this work, we take 2D-GaAs as a…
We present the fabrication details of completely undoped electron-hole bilayer devices in a GaAs/AlGaAs double quantum well heterostructure with a 30 nm barrier. These devices have independently tunable densities of the two-dimensional…
Holes confined in quantum dots have gained considerable interest in the past few years due to their potential as spin qubits. Here we demonstrate double quantum dot devices in Ge hut wires. Low temperature transport measurements reveal…