相关论文: Quantifying Temperature-dependent Substrate Loss i…
The thermal stability and structural evolution of a GaN high-electron-mobility transistor (HEMT) heterostructure grown on a Si (111) substrate were investigated using in situ high-temperature X-ray diffraction (HT-XRD), reciprocal space…
We study the effect of localized Joule heating on the mechanical properties of doubly clamped nanowires under tensile stress. Local heating results in systematic variation of the resonant frequency; these frequency changes result from…
Features of thermal transport in multilayered porous silicon nanostructures are considered. Such nanostructures were fabricated by electrochemical etching of monocrystalline Si substrates by applying periodically changed current density.…
We designed and successfully fabricated an absorption-type of superconducting coplanar waveguide (CPW) resonators. The resonators are made from a Niobium film (about 160 nm thick) on a high-resistance Si substrate, and each resonator is…
Guiding and manipulating GHz frequency acoustic waves in $\mu$m-scale waveguides and resonators opens up new degrees of freedom to manipulate radio frequency (RF) signals in chip-scale platforms. A critical requirement for enabling…
The need for high-temperature piezoelectric microelectromechanical systems (MEMS) requires pushing piezoelectric platforms to their thermal limits. In harsh thermal environments, piezoelectric MEMS devices are expected to sustain severe…
We report the effect of the substrate temperature on the magnetoresistance (MR) of the C60-based spin valve (SV) devices with the sandwich configuration of La0.67Sr0.33MnO3 (LSMO)/C60/cobalt (Co). The C60 interlayer deposited at different…
Room and high temperature mechanical properties of reactive magnetron sputtered TaSiN coatings were measured using nanoindentation (between 25C and 500C). Fracture toughness was also evaluated at a similar temperature range using the…
We report on the temperature dependence of the low-frequency electronic noise in NiO$_x$/Ga$_2$O$_3$ p-n heterojunction diodes. The noise spectral density is of the 1/f-type near room temperature but shows signatures of Lorentzian…
Polycrystalline samples of LaNi2(Ge{1-x}P{x})2 (x = 0, 0.25, 0.50, 0.75, 1) were synthesized and their properties investigated by x-ray diffraction (XRD), heat capacity Cp, magnetic susceptibility chi, and electrical resistivity rho…
Ad-hoc interface PCBs (Printed Circuit Boards) are today the standard connection between cryogenic cabling and quantum chips. Besides low-loss and low-temperature-dependent-dielectric-permittivity materials, Flame Resistance n.4 (FR4)…
The room-temperature longitudinal piezoresistance of n-type and p-type crystalline silicon along selected crystal axes is investigated under uniaxial compressive stresses up to 3 GPa. While the conductance ($G$) of n-type silicon eventually…
GaSb p-channel MOSFETs with an atomic layer deposited Al2O3 gate dielectric and a self-aligned Si implanted source/drain are demonstrated. Thermal anneal conditions are optimized for the source/drain impurity activation. Temperature…
We report a detailed analytic and numerical study of electronic thermal conductivity in d-wave superconductors. We compare theory of the cross over at low temperatures from T-dependence to T^3-dependence for increasing temperature with…
The thermal boundary resistance (Kapitza resistance) of (001) twist grain boundaries in silicon nanowires depends on the mismatch angle. This dependence is systematically investigated by means of nonequilibrium molecular dynamics…
The temperature and magnetic field dependence of lattice and carrier excitations in MnSi is studied in detail using inelastic light scattering. The pure symmetry components of the electronic response are derived from the polarization…
Direct observation of temperature dependence of individual bands of semiconductors for a wide temperature region is not straightforward, in particular. However, this fundamental property is a prerequisite in understanding the…
Perturbations to the effective refractive index from nanometer-scale fabrication variations in waveguide geometry plague high index-contrast photonic platforms including the ubiquitous sub-micron silicon-on-insulator (SOI) process. Such…
The electron band structure of graphene on SrTiO3 substrate has been investigated as a function of temperature. The high-resolution angle-resolved photoemission study reveals that the spectral width at Fermi energy and the Fermi velocity of…
Controlling thermal energy transfer at the nanoscale has become critically important in many applications and thermal properties since it often limits device performance. In this work, we study the effects on thermal conductivity arising…