相关论文: High Performance GNR Power Gating for Low-Voltage …

Graphene nanoribbon (GNR) field-effect transistors (FETs) with widths down to 12 nm have been fabricated by electron beam lithography using a wafer-scale chemical vapor deposition (CVD) process to form the graphene. The GNR FETs show…

Graphene-based devices are planned to augment the functionality of Si and III-V based technology in radio-frequency (RF) electronics. The expectations in designing graphene {field-effect} transistors (GFETs) with enhanced RF performance…

Advanced electronic device technologies require a faster operation and smaller average power consumption, which are the most important parameters in very large scale integrated circuit design. The conventional Complementary Metal-Oxide…

Using non-equilibrium Green's function formalism, we investigate nonlinear transport and charging effects of gated graphene nanoribbons (GNRs) with even number of zigzag chains. We find a negative differential resistance (NDR) over a wide…

Conductance fluctuation is usually unavoidable in graphene nanoribbons (GNR) due to the presence of disorder along its edges. By measuring the low-frequency noise in GNR devices, we find that the conductance fluctuation is strongly…

Gating mechanisms have emerged as an effective strategy integrated into model designs beyond recurrent neural networks for addressing long-range dependency problems. In a broad understanding, it provides adaptive control over the…

The grid-forming converter is an important unit in the future power system with more inverter-interfaced generators. However, improving its performance is still a key challenge. This paper proposes a generalized architecture of the…

Doped graphene emerges as a strong contender for active plasmonic material in the mid-infrared wavelengths due to the versatile external-control of its permittivity-function and also its highly-compressed graphene surface plasmon (GSP)…

The rapid-pace growing demand for high-performance computation and big-data manipulation entails substantial increase in global power consumption, and challenging thermal management. Thus, there is a need in allocating competitive…

A common issue in low temperature measurements of enhancement-mode metal-oxide-semiconductor (MOS) field-effect transistors (FETs) in the low electron density regime is the high contact resistance dominating the device impedance. In that…

The aim of this work is to design and implement an embedded system capable to characterize some relevant figures of merit of Gallium Nitride and Silicon Carbide transistors in a wide range of frequencies. In particular, the designed system…

This paper enumerates new architecture of low power dual-edge triggered Flip-Flop (DETFF) designed at 180nm CMOS technology. In DETFF same data throughput can be achieved with half of the clock frequency as compared to single edge triggered…

The power system state estimation (SE) algorithm estimates the complex bus voltages based on the available set of measurements. Because phasor measurement units (PMUs) are becoming more widely employed in transmission power systems, a fast…

Atomically precise graphene nanoribbons (GNRs) are increasingly attracting interest due to their largely modifiable electronic properties, which can be tailored by controlling their width and edge structure during chemical synthesis. In…

We introduce a new method for hardware non-uniform random number generation based on the transfer characteristics of graphene field-effect transistors (GFETs) which requires as few as two transistors and a resistor (or transimpedance…

Flash memory based on floating gate transistor is the most widely used memory technology in modern microelectronic applications. We recently proposed a new concept of multilayer graphene nanoribbon (MLGNR) and carbon nanotube (CNT) based…

We propose two schemes of field-effect transistor based on gapped armchair graphene nanoribbons connected to metal leads, by introducing sidearms or on-site gate voltages. We make use of the band gap to reach excellent switch-off character.…

The Gas Gain Monitoring (GGM) system of the Resistive Plate Chamber (RPC) muon detector in the Compact Muon Solenoid (CMS) experiment provides fast and accurate determination of the stability in the working point conditions due to gas…

In modern power systems, grid-forming power converters (GFMCs) have emerged as an enabling technology. However, the modeling of single-phase GFMCs faces new challenges. In particular, the nonlinear orthogonal signal generation unit, crucial…

The aim of this work is to present the optimization of the gate trench module for use in vertical GaN devices in terms of cleaning process of the etched surface of the gate trench, thickness of gate dielectric and magnesium concentration of…