相关论文: Imaging Domains in a Zero-Moment Half Metal
We present results of a combined density functional and many-body calculations for the electronic and magnetic properties of the defect-free digital ferromagnetic heterostructures obtained by doping GaAs with Cr and Mn. While local density…
We investigate the effect of Mn substitution in Fe$_2$Ti$_{1-x}$Mn$_x$Sn on electronic structure and magnetic and electrical transport properties. The spin-polarized density of states calculations using density-functional theory (DFT)…
The advance of magnetic nanotechnologies relies on detailed understanding of nanoscale magnetic mechanisms in materials. Magnetic domain memory (MDM), i.e., the tendency for magnetic domains to repeat the same pattern during field-cycling,…
We report on spherical neutron polarimetry and unpolarized neutron diffraction in zero magnetic field as well as flipping ratio and static magnetization measurements in high magnetic fields on the multiferroic square lattice antiferromagnet…
Room temperature coexistence of ferromagnetism and ferroelectricity in a thin film of a novel material of nominal composition PbTi0.5Fe0.5O3-d is probed by standard ferroelectric and ferromagnetic hysteresis loop measurements and by…
The magnetic order in antiferromagnetic (AF) materials is hard to control with external magnetic fields. However, recent advances in detecting and manipulating AF order electrically have opened up new prospects for these materials in basic…
Investigations into the magnetic properties of sputtered Mn$_{x}$CoGe films in the range $0.8 \leq x \leq 2.5$ uncovered ferrimagnetic order, unlike the ferromagnetic order reported in bulk samples. These films formed hexagonal…
The propagation of domain walls in a ferromagnetic film is largely determined by domain wall pinning at defects in the material. In this letter we map the effective potential landscape for domain wall pinning in Permalloy films by raster…
MnN is a centrosymmetric collinear antiferromagnet belonging to the transition metal nitride family with a high Neel temperature, a low anisotropy field, and a large magnetic moment per Mn atom. Despite several recent experimental and…
Room-temperature ferromagnetism is observed in (110) oriented ZnO films containing 5 at % of Sc, Ti, V, Fe, Co or Ni, but not Cr, Mn or Cu ions. There are large moments, 1.9 and 0.5 muB/atom for Co- and Ti-substituted oxides, respectively.…
Magnetotransport is investigated in thin films of the half-metallic ferrimagnet Mn$_2$Ru$_x$Ga in pulsed magnetic fields of up to 58 T. A non-vanishing Hall signal is observed over a broad temperature range, spanning the compensation…
Time-resolved Kerr microscopy is used to study the excitations of individual micron- scale ferromagnetic thin film elements in their remnant state. Thin (18 nm) square elements with edge dimensions between 1 and 10 $\mu$m form closure…
The first-principles full-potential linearized augmented plane-wave method based on density functional theory is used to investigate electronic structure and magnetic properties of hypothetical binary compounds of I$^{A}$ subgroup elements…
Here we demonstrate that MnTe epitaxial films with zinc-blend structure and MnTe/ZnTe multilayers should show ferroelectric polarization in antiferromagnetically (AFM) ordered state and thus belong to multiferroics. Spontaneous…
Magnetic nano-objects possess great potential for more efficient data processing, storage and neuromorphic type of applications. Using high perpendicular magnetic anisotropy synthetic antiferromagnets in the form of multilayer-based…
We consider a typical heterostructure domain patterned ferroelectric film/ultra thin dielectric layer/ semiconductor, where the semiconductor can be an electrolyte, paraelectric or multi layered graphene. Unexpectedly we have found that the…
We demonstrate how shape-induced strain can be used to control antiferromagnetic order in NiO/Pt thin films. For rectangular elements patterned along the easy and hard magnetocrystalline anisotropy axes of our film, we observe different…
Recent advances in nanofabrication make it possible to produce multilayer nanostructures composed of ultrathin film materials with thickness down to a few monolayers of atoms and lateral extent of several tens of nanometers. At these…
Antiferromagnetic order, being a ground state of a number of exotic quantum materials, is of immense interest both from the fundamental physics perspective and for driving potential technological applications. For a complete understanding…
In recent years, antiferromagnetic spintronics has received much attention since ideal antiferromagnets do not produce stray fields and are much more stable to external magnetic fields compared to materials with net magnetization. Akin to…