相关论文: Residual strain in free-standing CdTe nanowires ov…
Controlling the strain level in nanowire heterostructures is critical for obtaining coherent interfaces of high crystalline quality and for the setting of functional properties such as photon emission, carrier mobility or piezoelectricity.…
We employ three dimensional x-ray coherent diffraction imaging to map the lattice strain distribution, and to probe the elastic properties of a single crystalline Ni (001) nanowire grown vertically on an amorphous Si02 || Si substrate. The…
We present results on the growth of CdTe-HgTe core-shell nanowires, a realization of a quasi one-dimensional heterostructure of the topological insulator HgTe. The growth is a two step process consisting of the growth of single crystalline…
The strain configuration induced by the lattice mismatch in a core-shell nanowire is calculated analytically, taking into account the crystal anisotropy and the difference in stiffness constants of the two materials. The method is applied…
Although hydrogen cyanide has become quite a common molecular tracing species for a variety of astrophysical sources, it, however, exhibits dramatic non-LTE behaviour in its hyperfine line structure. Individual hyperfine components can be…
Two-dimensional (2D) Fe-chalcogenides have emerged with rich structures, magnetisms and superconductivities, which sparked the growing research interests in the torturous transition mechanism and tunable properties for their potential…
Employing density functional theory based calculations, we investigate structural, vibrational and strain-dependent electronic properties of an ultra-thin CdTe crystal structure that can be de- rived from its bulk counterpart. It is found…
Strain-engineering in SiGe nanostructures is fundamental for the design of optoelectronic devices at the nanoscale. Here we explore a new strategy, where SiGe structures are laterally confined by the Si substrate, to obtain high tensile…
Reaching a consensus on the superconducting order parameter of unconventional superconductors remains a central challenge in the field of magnetically-mediated superconductivity. Though UTe$_{2}$ is largely accepted as a rare example of an…
Coherent diffraction imaging (CDI) on Bragg reflections is a promising technique for the study of three-dimensional (3D) composition and strain fields in nanostructures, which can be recovered directly from the coherent diffraction data…
We investigate the structural and optical properties of spontaneously formed GaN nanowires with different degrees of coalescence. This quantity is determined by an analysis of the cross-sectional area and perimeter of the nanowires obtained…
We observed surface X-ray diffraction from He-4 submonolayers adsorbed on a single-surface graphite using synchrotron X-rays. Time evolutions of scattering intensities along the crystal truncation rod (CTR) were observed even after reaching…
Hydrogen incorporation in diluted nitride semiconductors dramatically modifies the electronic and structural properties of the crystal through the creation of nitrogen-hydrogen complexes. We report a convergent beam electron-diffraction…
Using nanoprobe X-ray diffraction microscopy, we investigate the relationship between residual strains from crystal growth in CsPbBr$_3$ thin film crystals, their stability, and local bandgap. We find that out-of-plane compressive strain…
Free-electron laser hard X-ray light sources can provide high fluence, femtosecond pulses, enabling the time-resolved probing of structural dynamics and elementary relaxation processes in molecules. Traditional X-ray elastic scattering from…
We investigate the strain state of ensembles of thin and nearly coalescence-free self-assembled GaN nanowires prepared by plasma-assisted molecular beam epitaxy on Ti/Al$_{2}$O$_{3}(0001)$ substrates. The shifts of Bragg peaks in…
Lattice defects play a key role in determining the properties of crystalline materials. Probing the 3D lattice strains that govern their interactions remains a challenge. Bragg Coherent Diffraction Imaging (BCDI) allows strain to be…
Halide perovskites are promising semiconductors for inexpensive, high-performance optoelectronics. Despite a remarkable defect tolerance compared to conventional semiconductors, perovskite thin films still show substantial microscale…
Top-down fabricated GaN nanowires, 250 nm in diameter and with various heights, have been used to experimentally determine the evolution of strain along the vertical direction of 1-dimensional objects. X-ray diffraction and…
The electrochemical growth of Au nanowires in a template of nano-porous anodic aluminum oxide was investigated in situ by means of grazing-incidence transmission small- and wide-angle x-ray scattering (GTSAXS and GTWAXS), x-ray fluorescence…