相关论文: Large enhancement of sensitivity in NiFe/Pt/IrMn-b…

Planar Hall magnetoresistive sensors (PHMR) are promising candidates for various magnetic sensing applications due to their high sensitivity, low power consumption, and compatibility with integrated circuit technology. However, their…

A shapeable planar Hall sensor has been fabricated by lift-off a bilayer structure of NiFe(10 nm)/IrMn (8 nm) grown on a Kapton/PDMS substrate without using a buffer layer. The sensor exhibits a magnetic field sensitivity of 0.74…

We report on investigation of spin Hall magnetoresistance sensor based on NiFe/AuxPt1-x bilayers. Compared to NiFe/Pt, the NiFe/AuxPt1-x sensor exhibits a much lower power consumption (reduced by about 57%), due to 80% enhancement of…

Planar Hall effect (PHE) magnetic sensors are attractive for various applications where the field resolution is required in the range of sub-nano Tesla or in Pico Tesla. Here we present a detailed noise study of the PHE sensors consisting…

In Mn$_3$X (X=Sn, Ge) antiferromagnets domain walls are thick and remarkably complex because of the non-collinear arrangement of spins in each domain. A planar Hall effect (PHE), an electric field perpendicular to the applied current but…

Planar Hall effect (PHE) in topological insulators (TIs) is discussed as an effect that stems mostly from conduction due to topologically protected surface states. Although surfaces states play a critical role and are of utmost importance…

We present a spin Hall magnetoresistance sensor based on a NiFe/Pt multiring bridge structure, which exhibits high sensitivity and good linearity in two perpendicular directions within the sensor plane. Under DC excitation, it responds…

Pt ultrathin films on ferromagnetic insulators have been widely studied for spintronics applications, and magnetic moments of interface Pt atoms were considered to be ferromagnetically ordered due to a magnetic proximity effect (MPE). An…

Interest in planar Hall effect (PHE) sensors has re-emerged in recent years due to their promising potential for a wide range of applications, particularly in biotechnology. Sensor sensitivity can be enhanced by lowering the effective…

We report experimental observation of the Planar Hall effect (PHE) in a type-II Dirac semimetal PtTe$_2$. This unusual Hall effect is not expected in nonmagnetc materials such as PtTe$_2$, and has been observed previously mostly in magnetic…

The spin Hall angle in Pt is evaluated in Pt/NiFe bilayers by spin torque ferromagnetic resonance (ST-FMR) measurements, and is found to increase with increasing the NiFe thickness. To extract the intrinsic spin Hall angle in Pt by…

We demonstrate an ultrathin and semitransparent anisotropic and spin Hall magnetoresistance sensor based on NiFe/Pt heterostructure. The use of spin-orbit torque effective field for transverse biasing allows to reduce the total thickness of…

Anomalous Hall effect studies on ultrathin Si(50Angstrom)/Fe(t_Fe) bilayers were performed at 300 K. Giant enhancements of about 60 times in saturation anomalous Hall resistivity and 265 times in anomalous Hall coefficient (R_s) were…

Interfacing topological insulators (TIs) with magnetic insulators (MIs) has been widely used to study the interaction between topological surface states and magnetism. Previous transport studies typically interpret the suppression of weak…

Solid-state magnetic field sensors are important to both modern electronics and fundamental materials science. Many types of these sensors maintain high sensitivity only in a limited range of temperature and background magnetic field, but…

Anomalous Hall effect studies were performed at 300 K on Si/Fe multilayers prepared by dc magnetron sputtering. About 60 times enhancement in the saturation Hall resistance and 80 times enhancement in anomalous Hall coefficient are obtained…

The current- and voltage-scaled sensitivities and signal-to-noise ratios (SNR) (with respect to thermal noise) of various octagonal AlGaN/GaN and InAlN/GaN Hall-effect sensors were examined in this work. The effect of metal contact lengths…

Nonreciprocal (NR) charge transport in quantum materials has attracted enormous interest since it offers an avenue to investigate quantum symmetry related physics and holds many prospective applications such as rectification and…

The Dirac electrons occupying the surface states (SSs) of topological insulators (TIs) have been predicted to exhibit many exciting magneto-transport phenomena. Here we report on the first experimental observation of an unconventional…

We evidenced unconventionnal Anomalous Hall Effects (AHE) in 3d/5d (Co0.2nm/Ni0.6nm)N multilayers grown on a thin Pt layer or thin Au:W alloy. The inversion observed on AHE originates from the opposite sign of the spin-orbit coupling of Pt…