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Using a fully ab-initio methodology, we demonstrate how the lattice vibrations couple with neutral excitons in monolayer WSe2 and contribute to the non-radiative excitonic lifetime. We show that only by treating the electron-electron and…

强关联电子 · 物理学 2018-08-08 Himani Mishra , Anindya Bose , Amit Dhar , Sitangshu Bhattacharya

Exciton-phonon interactions play a central role in defining the optical response of hexagonal boron nitride (hBN), yet their quantitative determination has remained incomplete. Here, we reveal the Fr\"ohlich-type exciton-phonon coupling in…

介观与纳米尺度物理 · 物理学 2026-05-21 Ioannis Chatzakis , Timur Abdilov , Elliot Walker , Jaime Freitas , Song Liu , James H. Edgar

A new interpretation of the optical and energy-loss spectra of hexagonal boron nitride is provided based on first-principle calculations. We show that both spectra cannot be explained by independent-particle transitions but are strongly…

材料科学 · 物理学 2007-05-23 Ludger Wirtz , Andrea Marini , Myrta Gruning , Angel Rubio

Employing the density-functional theory with local density approximation, we show that the fully hydrogenated monolayer-hexagonal boron nitride (H$_2$BN) has a direct-band gap of 2.96 eV in the blue-light region while the pristine…

超导电性 · 物理学 2021-10-04 Takat B. Rawal , Ling-Hua Chang , Hao-Dong Liu , Hong-Yan Lu , C. S. Ting

We present an \textit{ab initio} method to calculate phonon-assisted absorption and emission spectra in the presence of strong excitonic effects. We apply the method to bulk hexagonal BN which has an indirect band gap and is known for its…

Near band-gap luminescence (hnu > 5 eV) of hexagonal boron nitride has been studied by means of the time- and energy-resolved photoluminescence spectroscopy method. Two emissions have been observed at 5.5 eV and 5.3 eV. The high-energy…

光学 · 物理学 2009-11-13 Luc Museur , Andrei V. Kanaev

We show that the optical absorption spectra of boron nitride (BN) nanotubes are dominated by strongly bound excitons. Our first-principles calculations indicate that the binding energy for the first and dominant excitonic peak depends…

材料科学 · 物理学 2013-08-07 Ludger Wirtz , Andrea Marini , Angel Rubio

We show that hexagonal boron nitride (hBN), a two-dimensional insulator, when subjected to an external superlattice potential forms a new paradigm for electrostatically tunable excitons in the near- and mid-ultraviolet (UV). The imposed…

介观与纳米尺度物理 · 物理学 2024-08-08 Pedro Ninhos , Christos Tserkezis , N. Asger Mortensen , Nuno M. R. Peres

Being a flexible wide band gap semiconductor, hexagonal boron nitride (h-BN) has great potential for technological applications like efficient deep ultraviolet light sources, building block for two-dimensional heterostructures and room…

The temperature-dependent optical response of excitons in semiconductors is controlled by the exciton-phonon interaction. When the exciton-lattice coupling is weak, the excitonic line has a Lorentzian profile resulting from motional…

材料科学 · 物理学 2017-05-31 T. Q. P. Vuong , G. Cassabois , P. Valvin , S. Liu , J. H. Edgar , B. Gil

The calculated quasiparticle band structure of bulk hexagonal boron nitride using the all-electron GW approximation shows that this compound is an indirect-band-gap semiconductor. The solution of the Bethe-Salpeter equation for the…

材料科学 · 物理学 2009-11-11 B. Arnaud , S. Lebègue , P. Rabiller , M. Alouani

We report $ab$ $initio$ band diagram and optical absorption spectra of hexagonal boron nitride ($h$-BN), focusing on unravelling how the completeness of basis set for $GW$ calculations and how electron-phonon interactions (EPIs) impact on…

Hexagonal boron nitride (hBN) is a wide band gap material with both strong excitonic light emission in the ultraviolet and strong exciton-phonon coupling. Luminescence experiments performed on the recently synthesized monolayer form (m-hBN)…

材料科学 · 物理学 2023-02-28 Pierre Lechifflart , Fulvio Paleari , Davide Sangalli , Claudio Attaccalite

We propose that the carbon dimer defect in hexagonal boron nitride gives rise to the ubiquitous narrow luminescence band with a zero-phonon line of 4.08 eV (usually labeled the 4.1 eV band). Our first-principles calculations are based on…

We study the carbon dimer defect in a hexagonal boron-nitride monolayer using the GW and Bethe-Salpeter many-body perturbation theories within a finite size cluster approach. While quasiparticle energies converge very slowly with system…

介观与纳米尺度物理 · 物理学 2021-10-04 Michael Winter , Manon H. E. Bousquet , Denis Jacquemin , Ivan Duchemin , Xavier Blase

We study experimentally and theoretically the exciton-phonon interaction in MoSe2 monolayers encapsulated in hexagonal BN, which has an important impact on both optical absorption and emission processes. The exciton transition linewidth…

Exciton effects are studied in single-wall boron-nitride nanotubes. The Coulomb interaction dependence of the band gap, the optical gap, and the binding energy of excitons are discussed. The optical gap of the (5,0) nanotube is about 6eV at…

材料科学 · 物理学 2009-07-07 Kikuo Harigaya

We investigate the distribution and temperature-dependent optical properties of sharp, zero-phonon emission from defect-based single photon sources in multilayer hexagonal boron nitride (h-BN) flakes. We observe sharp emission lines from…

Excitons -- elementary excitations formed by bound electron-hole pairs -- govern the optical properties and excited-state dynamics of materials. In two-dimensions (2D), excitons are theoretically predicted to have a linear energy-momentum…

材料科学 · 物理学 2025-03-14 Luna Y. Liu , Steffi Y. Woo , Jinyuan Wu , Bowen Hou , Cong Su , Diana Y. Qiu

Recent measurements have shown that a continuously tunable bandgap of up to 250 meV can be generated in biased bilayer graphene [Y. Zhang et al., Nature 459, 820 (2009)], opening up pathway for possible graphene-based nanoelectronic and…

材料科学 · 物理学 2010-02-11 Cheol-Hwan Park , Steven G. Louie
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