相关论文: Bulk inversion asymmetry induced magnetogyrotropic…
Polarization conversion of light reflected from quantum wells governed by both magnetic field and light propagation direction is observed. We demonstrate that the polarization conversion is caused by the magneto-spatial dispersion in…
Structure and bulk inversion asymmetry in doped (001)-grown GaAs quantum wells is investigated by applying the magnetic field induced photogalvanic effect. We demonstrate that the structure inversion asymmetry (SIA) can be tailored by…
We report on the observation of optical activity of quantum wells resulting in the conversion of the light polarization state controlled by the light propagation direction. The polarization conversion is detected in reflection measurements.…
The influence of bulk inversion asymmetry in [001] and [013] grown HgTe quantum wells is investigated theoretically. The bulk inversion asymmetry leads to an anti-crossing gap between two zero-mode Landau levels in a HgTe topological…
We have developed an 8-band Effective Mass Approximation model that describes the zero field spin splitting in the band structure of zincblende heterostructures due to bulk inversion asymmetry (BIA). We have verified that our finite…
In this study we have measured the magnetoresistance response of inverted HgTe quantum wells in the presence of a large parallel magnetic field up to 33 T is applied. We show that in quantum wells with inverted band structure a…
We have developed a theory of the longitudinal $g$ factor of light holes in semiconductor quantum wells. It is shown that the absolute value of the light-hole $g$-factor can strongly exceed its value in the bulk and, moreover, the…
We propose a spin transistor using only non-magnetic materials that exploits the characteristics of bulk inversion asymmetry (BIA) in (110) symmetric quantum wells. We show that extremely large spin splittings due to BIA are possible in…
The bases of the theory of light reflection and absorption by low-dimensional semiconductor objects (quantum wells, wires and dots) at both monochromatic and pulse irradiations and at any form of light pulses are developed. The…
Photoluminescence and polarized reflection spectra of quantum well structures with symmetric Cd$_{0.9}$Zn$_{0.1}$Te/CdTe/Cd$_{0.9}$Zn$_{0.1}$Te and asymmetric Cd$_{0.9}$Zn$_{0.1}$Te/CdTe/Cd$_{0.4}$Mg$_{0.6}$Te barriers were studied. The…
Theory of weak localization is developed for electrons in semiconductor quantum wells grown along [110] and [111] crystallographic axes. Anomalous conductivity correction caused by weak localization is calculated for symmetrically doped…
In-plane magnetic field photoluminescence spectra from a series of GaAs/AlGaAs coupled double quantum wells show distinctive doublet structures related to the symmetric and antisymmetric states. The magnetic field behavior of the upper…
In this paper, we study doped HgTe/CdTe quantum well with Hubbard-type interaction under perpendicular magnetic field using a lattice Bernevig-Hughes-Zhang (BHZ) model with a bulk inversion asymmetry (BIA) term. We show that the BIA term is…
The degree and orientation of the magnetic-field induced linear polarization of the photoluminescence from a wide range of heterostructures containing (Cd,Mn)Te quantum wells between (Cd,Mn,Mg)Te barriers has been studied as a function of…
Photoluminescence spectra of a (001)-Cd0.99Mn0.01Te quantum well were taken with linear-polarization resolution and using an in-plane magnetic field. Because the quantum well contained a two-dimensional electron gas, the spectra consisted…
In photoluminescence spectra of symmetric [111] grown GaAs/AlGaAs quantum dots in longitudinal magnetic fields applied along the growth axis we observe in addition to the expected bright states also nominally dark transitions for both…
The method of detection and investigation of the magnetopolaron effect in the semiconductor quantum wells (QW) in a strong magnetic field, based on pulse light irradiation and measuring the reflected and transmitted pulses, has been…
Light reflection and absorption spectra by a semiconductor quantum well (QW) , which width is comparable to a light wave length of stimulating radiation, are calculated. A resonance with two close located exited levels is considered. These…
Strong effects of optical polarization anisotropy observed previously in the quantum wells subjected to the in-plane magnetic field arrive at complete description within microscopic approach. Theory we develop involves two sources of…
Light reflection and absorption spectra by a semiconductor quantum well (QW), which width is comparable to a light wave length of stimulating radiation, are calculated. A resonance with two close located exited levels is considered. These…