相关论文: Valley engineering by strain in Kekul\'e-distorted…
We study structural and electronic properties of graphene grown on SiC substrate using scanning tunneling microscope (STM), spot-profile-analysis low energy electron diffraction (SPA-LEED) and angle resolved photoemission spectroscopy…
We present the first Raman spectroscopic study of Bernal bilayer graphene flakes under uniaxial tension. Apart from a purely mechanical behavior in flake regions where both layers are strained evenly, certain effects stem from inhomogeneous…
In the presence of axial magnetic fields that can be realized in deliberately buckled monolayer graphene, quasi-relativistic Dirac fermions may find themselves in a variety of broken symmetry phases even for weak interactions. Through a…
Recently, great experimental efforts towards designing topological electronic states have been invested in layered incommensurate heterostructures which form various nano- and meso-scale domains. In particular, it has become clear that a…
The fourfold spin-valley degenerate degrees of freedom in bulk graphene can support rich physics and novel applications associated with multicomponent quantum Hall effects and linear conductance filtering. In this work, we study how to…
We theoretically study the effects of electron-electron interaction in twisted bilayer graphene in applied transverse dc electric field. When the twist angle is not very small, the electronic spectrum of the bilayer consists of four Dirac…
In strained graphene, lattice deformation can create pseudo-magnetic fields and result in zero-field Landau level-like quantization. In the presence of an external magnetic field, valley-polarized Landau levels are predicted to be observed…
In twisted van der Waals materials, local atomic relaxation can alter the underlying electronic structure. Characterizing lattice reconstruction and its susceptibility to strain is essential for understanding emergent electronic states,…
We revisit the global phase diagram of magic-angle twisted bilayer and [symmetric] trilayer graphene (MA-TBG/TSTG) in light of recent scanning tunneling microscopy (STM) measurements on these materials. These experiments both confirmed the…
Extended defects in graphene, such as linear edges, break the translational invariance and can also have an impact on the symmetries specific to massless Dirac-like quasiparticles in this material. The paper examines the consequences of a…
We demonstrate that stacking layered materials allows a novel type of strain engineering where each layer is strained independently, which we call heterostrain. We combine detailed structural and spectroscopic measurements with…
Graphene as a two-dimensional (2D) topological Dirac semimetal has attracted much attention for its outstanding properties and potential applications. However, three-dimensional (3D) topological semimetals for carbon materials are still…
The sharp Dirac cone of the electronic dispersion confers to graphene a remarkable sensitivity to strain. It is usually encoded in scalar and pseudo-vector potentials, induced by the modification of hopping parameters, which have given rise…
It is highly desirable to modify and improve the Dirac electron system of graphene for novel electronic properties and promising applications. For this purpose, we study 2D heterostructures consisting of graphene and monolayer TMDs by means…
We present a phenomenological theory of the low energy moir\'e minibands of Dirac electrons in graphene placed on an almost commensurate hexagonal underlay with a unit cell pproximately three times larger than that of graphene.A slight…
We consider twisted bilayer graphene on a transition metal dichalcogenide substrate, where proximity-induced spin-orbit coupling significantly alters the eight flat bands which occur near the magic angle. The resulting band structure…
We investigate the organized formation of strain, ripples and suspended features in macroscopic CVD-prepared graphene sheets transferred onto a corrugated substrate made of an ordered arrays of silica pillars of variable geometries.…
We study the band dispersion of graphene with randomly distributed structural defects using two complementary methods, exact diagonalization of the tight-binding Hamiltonian and implementing a self-consistent T matrix approximation. We…
We investigate the twist-angle and gate dependence of the proximity exchange coupling in twisted graphene on monolayer Cr$_2$Ge$_2$Te$_6$ from first principles. The proximitized Dirac band dispersions of graphene are fitted to a model…
We study the electronic properties of a twisted trilayer graphene, where two of the layers have Bernal stacking and the third one has a relative rotation with respect to the AB-stacked layers. Near the Dirac point, the AB-twisted trilayer…