相关论文: Ionic liquid gating of InAs nanowire-based field e…
The ability to tune material properties using gate electric field is at the heart of modern electronic technology. It is also a driving force behind recent advances in two-dimensional systems, such as gate-electric-field induced…
Ionic gating is a powerful technique for tuning the physical properties of a material via electric field-induced charge doping, but is prone to introduce extrinsic disorder and undesired electrochemical modifications in the gated material…
We report on the electronic transport properties of multiple-gate devices fabricated from undoped silicon nanowires. Understanding and control of the relevant transport mechanisms was achieved by means of local electrostatic gating and…
InAs nanowires have been actively explored as the channel material for high performance transistors owing to their high electron mobility and ease of ohmic metal contact formation. The catalytic growth of non-epitaxial InAs nanowires,…
Indium-Arsenide (InAs) nanowire field-effect transistors (NWFETs) are promising platforms for high-speed, low-power nanoelectronics operating at cryogenic conditions, relevant for quantum information processing. We use selective area growth…
We demonstrate that the capacitance of ionic-liquid filled supercapacitors is substantially increased by placing a diode-like structure on the separator membrane. We call the structured separator: gate, and demonstrate that the order of a…
Electrically-conducting diamond is a promising candidate for next-generation electronic, thermal and electrochemical applications. One of the major obstacles towards its exploitation is the strong degradation that some of its key physical…
A simple and highly reproducible single electron transistor (SET) has been fabricated using gated silicon nanowires. The structure is a metal-oxide-semiconductor field-effect transistor made on silicon-on-insulator thin films. The channel…
We demonstrate an original method -- based on controlled oxidation -- to create high-quality tunnel junctions between superconducting Al reservoirs and InAs semiconductor nanowires. We show clean tunnel characteristics with a current…
Gate-All-Around Field-Effect Transistors (GAAFETs), now entering high-volume production as successors to fin field-effect transistor technology, are enabling continued scaling and enhanced performance in advanced semiconductor nodes.…
The associations between emergent physical phenomena (e.g., superconductivity) and orbital, charge, and spin degrees of freedom of $3d$ electrons are intriguing in transition metal compounds. Here, we successfully manipulate the…
In a family of experiments carried on all-metallic supercurrent nano-transistors a surprising gating effect has been recently shown. These include the full suppression of the critical supercurrent, the increase of quasiparticle population,…
A nanoscale device consisting of a metal nanowire, a dielectric, and a gate is proposed. A combination of quantum and thermal stochastic effects enable the device to have multiple functionalities, serving alternately as a transistor, a…
A dual mode device behaving either as a field-effect transistor or a single electron transistor (SET) has been fabricated using silicon-on-insulator metal oxide semiconductor technology. Depending on the back gate polarisation, an electron…
The observation of the gate-controlled supercurrent (GCS) effect in superconducting nanostructures increased the hopes for realizing a superconducting equivalent of semiconductor field-effect transistors. However, recent works attribute…
We present a superconductor-semiconductor material system that is both scalable and monolithically integrated on a silicon substrate. It uses selective area growth of Al-InAs hybrid structures on a planar III-V buffer layer, grown directly…
InGaN nanowires are suitable building blocks for many future optoelectronic devices. We show that a linear grading of the indium content along the nanowire axis from GaN to InN introduces an internal electric field evoking a photocurrent.…
We investigate gate-defined quantum dots in silicon on insulator nanowire field-effect transistors fabricated using a foundry-compatible fully-depleted silicon-on-insulator (FD-SOI) process. A series of split gates wrapped over the silicon…
Selective area growth (SAG) of nanowires and networks promise a route toward scalable electronics, photonics and quantum devices based on III-V semiconductor materials. The potential of high-mobility SAG nanowires however is not yet fully…
Fundamentally, lithium niobate is an extremely good electrical insulator. However, this can change dramatically when 180{\deg} domain walls are present, as they are often found to be strongly conducting. Absolute conductivities depend on…