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Graphene has shown great potentials for high-speed photodetection. Yet, the responsivities of graphene-based high-speed photodetectors are commonly limited by the weak effective absorption of atomically thin graphene. Here, we propose and…

The impact of semiconductor surface roughness on the electrical and thermal contact resistances and thermoEMF of thermoelectric material (TEM)-metal transient contact layer is studied theoretically. The distribution of hollows and humps on…

介观与纳米尺度物理 · 物理学 2018-09-10 P. V. Gorskyi

The fate of the charge-neutral Dirac point in graphene in a high magnetic field $H$ has been investigated at low temperatures ($T\sim$ 0.3 K). In samples with small $V_0$ (the gate voltage needed to access the Dirac point), the resistance…

介观与纳米尺度物理 · 物理学 2008-05-21 Joseph G. Checkelsky , Lu Li , N. P. Ong

The fabrication of epitaxial graphene (EG) on SiC substrate by annealing has attracted a lot of interest as it may speed up the application of graphene for future electronic devices. The interaction of EG and the SiC substrate is critical…

材料科学 · 物理学 2009-11-13 Z. H. Ni , W. Chen , X. F. Fan , J. L. Kuo , T. Yu , A. T. S. Wee , Z. X. Shen

This work evaluates the performance of carbon nanotube field effect transistors (CNTFET) using few layer graphene as the contact electrode material. We present the experimental results obtained on the barrier height at CNT graphene junction…

介观与纳米尺度物理 · 物理学 2016-11-17 P R Yasasvi Gangavarapu , Punith Chikkahalli Lokesh , K N Bhat , A K Naik

Contact resistivity rc of InP and GaAs based ohmic contacts was measured in the 4.2/300 K temperature range. Nonmonotonic dependences rc(T), with a minimum at temperature 50 K (150 K) for InP (GaAs) based contacts were obtained. The results…

Since the first graphene layer was fabricated in the early 2000's, graphene properties have been studied extensively both experimentally and theoretically. However, when comparing the many resistivity models reported in literature, several…

We perform electrical transport measurements in graphene with several sample geometries. In particular, we design ``invasive'' probes crossing the whole graphene sheet as well as ``external'' probes connected through graphene side arms. The…

介观与纳米尺度物理 · 物理学 2008-12-07 B. Huard , N. Stander , J. A. Sulpizio , D. Goldhaber-Gordon

Conductions fluctuations (CF) are studied in single layer graphene devices with superconducting source and drain contacts made from aluminium. The CF are found to be enhanced by superconductivity by a factor of 1.4 to 2. This (near)…

介观与纳米尺度物理 · 物理学 2011-09-19 F. Freitag , J. Trbovic , C. Schönenberger

In their comment Calandra \textit{et al} \cite{Calandra}, assert two points: (1) the estimate of charge transfer from Li to graphene layers in LiC$_6$ in our letter \cite{Pan2011c} is incorrect because of the three dimensional (3D)…

超导电性 · 物理学 2012-04-10 Z. -H. Pan , A. V. Fedorov , C. A. Howard , M. Ellerby , T. Valla

The contact strength, adhesion and friction, between graphene and an incommensurate crystalline substrate such as {\it h}-BN depends on their relative alignment angle $\theta$. The well established Novaco-McTague (NM) theory predicts for a…

材料科学 · 物理学 2017-05-29 Roberto Guerra , Merel van Wijk , Andrea Vanossi , Annalisa Fasolino , Erio Tosatti

Graphene is considered to be a promising candidate for future nano-electronics due to its exceptional electronic properties. Unfortunately, the graphene field-effect-transistors (FETs) cannot be turned off effectively due to the absence of…

材料科学 · 物理学 2010-02-11 Fengnian Xia , Damon B. Farmer , Yu-ming Lin , Phaedon Avouris

The interaction between graphene and metals represents an important issue for the large-area preparation of graphene, graphene transfer and the contact quality in graphene devices. We demonstrate a simple method for estimating and…

材料科学 · 物理学 2023-03-06 Sara D. Costa , Johan Ek Weis , Otakar Frank , Martin Kalbac

We analyse doping of graphene grown on SiC in two models which differ by the source of charge transfered to graphene, namely, from SiC surface and from bulk donors. For each of the two models, we find the maximum electron density induced in…

材料科学 · 物理学 2010-09-20 Sergey Kopylov , Alexander Tzalenchuk , Sergey Kubatkin , Vladimir I. Fal'ko

Transport properties of multigraphene layers on 6H-SiC substrates fabricated by thermal graphitization of SiC were studied. The principal result is that these structures were shown to contain a nearly perfect graphene layer situated between…

Simplifications of a result from a prior paper concerning the electric resistance between points in a distance-regular graph are given. In particular, we prove that the maximal resistance between points is bounded by twice the resistance…

组合数学 · 数学 2013-03-22 Jacobus Koolen , Greg Markowsky

The resistance $r(G)$ of a graph $G$ is the minimum number of edges that have to be removed from $G$ to obtain a graph which is $\Delta(G)$-edge-colorable. The paper relates the resistance to other parameters that measure how far is a graph…

离散数学 · 计算机科学 2011-11-17 Vahan Mkrtchyan , Eckhard Steffen

We articulate the challenges and opportunities of unconventional devices using the photon like flow of electrons in graphene, such as Graphene Klein Tunnel (GKT) transistors. The underlying physics is the employment of momentum rather than…

介观与纳米尺度物理 · 物理学 2019-03-01 Mirza M. Elahi , K. M. Masum Habib , Ke Wang , Gil-Ho Lee , Philip Kim , Avik W. Ghosh

Two different points of view are available to understand the behavior of graphene at low energies. One is considering a large $N_F$ that makes graphene a semimetal, and another for small $N_F < 2.5$ that would make graphene a narrow gap…

强关联电子 · 物理学 2011-10-18 N. García , P. Esquinazi , A. A. Pasa

Message passing graph neural networks (GNNs) are a popular learning architectures for graph-structured data. However, one problem GNNs experience is oversquashing, where a GNN has difficulty sending information between distant nodes.…

机器学习 · 计算机科学 2023-06-07 Mitchell Black , Zhengchao Wan , Amir Nayyeri , Yusu Wang
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