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The absence of a band-gap in graphene limits the gate modulation of its electron conductivity, both in regular graphene as well as in PN junctions, where electrostatic barriers prove transparent to Klein tunneling. We demonstrate a novel…

Dirac-electronic tunneling and nonlinear transport properties with both finite and zero energy bandgap are investigated for graphene with a tilted potential barrier under a bias. For validation, results from a finite-difference based…

We have utilized the finite-difference approach to explore electron-tunneling properties in gapped graphene through various electrostatic-potential barriers changing from Gaussian to a triangular envelope function in comparison with a…

Ballistic semiconductor structures have allowed the realization of optics-like phenomena in electronics, including magnetic focusing and lensing. An extension that appears unique to graphene is to use both n and p carrier types to create…

We investigate quantum tunneling of charge carriers through a periodic superlattice in twisted bilayer graphene (TBG) with rectangular potential barriers, including the presence of a defect, using a low-energy continuum model. Transmission…

Scientists are always yearning for new and exciting ways to unlock graphene's true potential. However, recent reports suggest this two-dimensional material may harbor some unique properties, making it a viable candidate for use in…

We develop a device model for p-i-n tunneling transit-time diodes based on single- and multiple graphene layer structures operating at the reverse bias voltages. The model of the graphene tunneling transit-time diode (GTUNNETT) accounts for…

We propose Graphene Klein tunnel transistors (GKTFET) as a way to enforce current saturation while maintaining large mobility for high speed radio frequency (RF) applications. The GKTFET consists of a sequence of angled graphene p-n…

The relativistic nature of charge carriers in graphene is expected to lead to an angle- dependent transmission through a potential barrier, where Klein tunneling involves annihilation of an electron and a hole at the edges of the barrier.…

The peculiar nature of electron scattering in graphene is among many exciting theoretical predictions for the physical properties of this material. To investigate electron scattering properties in a graphene plane, we have created a…

Transport through potential barriers in graphene is investigated using a set of metallic gates capacitively coupled to graphene to modulate the potential landscape. When a gate-induced potential step is steep enough, disorder becomes less…

Creation of sharp lateral p-n junctions in graphene devices, with transition widths well below the Fermi wavelength of graphene charge carriers, is vital to study and exploit these electronic systems for electron-optical applications. The…

Non-diffusive effects in charge transport become relevant as device sizes and features become comparable to the electronic mean free path. As a model system, we investigate the electric transport around mesoscopic defects in graphene with…

The metal-graphene contact resistance is a technological bottleneck for the realization of viable graphene based electronics. We report a useful model to find the gate tunable components of this resistance determined by the sequential…

Local curvature, or bending, of a graphene sheet is known to increase the chemical reactivity presenting an opportunity for templated chemical functionalization. Using first principles calculations based on density functional theory (DFT)…

Metal contacts have been identified to be a key technological bottleneck for the realization of viable graphene electronics. Recently, it was observed that for structures that possess both a top and a bottom gate, the electron-hole…

The conductance and the Fano factor in a graphene sheet in the ballistic regime are calculated. The electrostatic potential in the sheet is modeled by a trapezoid barrier, which allows to use the exact solution of the Dirac equation in a…

Photon-assisted electron transport in ballistic graphene is analyzed using scattering theory. We show that the presence of an ac signal (applied to a gate electrode in a region of the system) has interesting consequences on electron…

The conductance of ballistic graphene at the neutrality point is due to coherent electron tunneling between the leads, the so called pseudodiffusive regime. The conductance scales as function of the sample dimensions in the same way as in a…

Nanostructuring of graphene is in part motivated by the requirement to open a gap in the electronic band structure. In particular, a periodically perforated graphene sheet in the form of an antidot lattice may have such a gap. Such systems…