相关论文: Giant spin Hall Effect in two-dimensional monochal…
The search for two-dimensional materials with exotic valley-dependent properties has attracted rapid attention as they are fundamentally intriguing and practically appealing for nanoscale device applications. Here, using first-principles…
Spin Hall effects have surged as promising phenomena for spin logics operations without ferromagnets. However, the magnitude of the detected electric signals at room temperature in metallic systems has been so far underwhelming. Here, we…
We study the intrinsic spin Hall conductivity (SHC) in various $5d$-transition metals (Ta, W, Re, Os, Ir, Pt, and Au) and 4d-transition metals (Nb, Mo, Tc, Ru, Rh, Pd, and Ag) based on the Naval Research Laboratory tight-binding model,…
Phosphorene is a single elemental two-dimensional semiconductor that has quickly emerged as a high mobility material for transistors and optoelectronic devices. In addition, being a 2D material, it can sustain high levels of strain,…
A recent paper [Go $\textit{et al}$., Phys. Rev. Lett. $\textbf{121}$, 086602 (2018)] proposed that the intrinsic orbital Hall effect (OHE) can emerge from momentum-space orbital texture in centrosymmetric materials. In searching for real…
The respective unique merit of antiferromagnets and two-dimensional (2D) materials in spintronic applications inspire us to exploit 2D antiferromagnetic spintronics. However, the detection of the N\'eel vector in 2D antiferromagnets remains…
We theoretically investigate the mechanism to generate large intrinsic spin Hall effect in iridates or more broadly in 5d transition metal oxides with strong spin-orbit coupling. We demonstrate such a possibility by taking the example of…
Graphene is an excellent material for long distance spin transport but allows little spin manipulation. Transition metal dichalcogenides imprint their strong spin-orbit coupling into graphene via proximity effect, and it has been predicted…
Spin Hall effect (SHE), a mechanism by which materials convert a \textit{charge} current into a \textit{spin} current, invokes interesting physics and promises to empower transformative, energy-efficient memory technology. However,…
The analysis of the electronic properties of strained or lattice deformed graphene combines ideas from classical condensed matter physics, soft matter, and geometrical aspects of quantum field theory (QFT) in curved spaces. Recent…
A key challenge in manipulating the magnetization in heavy-metal/ferromagnetic bilayers via the spin-orbit torque is to identify materials that exhibit an efficient charge-to-spin current conversion. Ab initio electronic structure…
We study both the intrinsic and extrinsic spin Hall effect in spin-valley coupled monolayers of transition metal dichalcogenides. We find that whereas the skew-scattering contribution is suppressed by the large band gap, the side-jump…
While moir\'e phenomena have been extensively studied in low-carrier-density systems such as graphene and semiconductors, their implications for metallic systems with large Fermi surfaces remain largely unexplored. Using GPU-accelerated…
We have carried out a comprehensive study of the intrinsic anomalous Hall effect and spin Hall effect of several chiral antiferromagnetic compounds, Mn$_3X$ ($X$ = Ge, Sn, Ga, Ir, Rh and Pt) by $ab~initio$ band structure and Berry phase…
Strain provides an effective means to tune the electrical properties while retaining the native chemical composition of the material. Unlike three-dimensional solids, two-dimensional materials withstand higher levels of elastic strain…
In this work, we report a systematic study of the electronic structures, band topology, and intrinsic spin Hall effect (SHE) of the layered MAX carbides Mn+1AlCn (M= Nb, Ta, n=1, 2, 3) and explore the correlation effects on the SHE. The…
We investigate the spin Hall effect in a single-layer graphene device with disorder and interface-induced spin-orbit coupling. Our graphene device is connected to four semi-infinite leads that are embedded in a {Landauer-B\"uttiker} setup…
Atomically-thin materials based on transition metal dichalcogenides and graphene offer a promising avenue for unlocking the mechanisms underlying the spin Hall effect (SHE) in heterointerfaces. Here, we develop a microscopic theory of the…
We survey the state-of-the-art knowledge of ferroelectric and ferroelastic group-IV monochalcogenide monolayers. These semiconductors feature remarkable structural and mechanical properties, such as a switchable in-plane spontaneous…
Phosphorene, an emerging elemental two-dimensional (2D) direct band gap semiconductor with fascinating structural and electronic properties distinctively different from other 2D materials such as graphene and MoS2, is promising for novel…