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Exciton transport is fundamental for understanding transport phenomena in bosonic systems and for exploring excitation energy transfer in materials. Spatially indirect excitons (IXs) are composed of electrons and holes in separated layers.…

介观与纳米尺度物理 · 物理学 2025-09-16 Zhiwen Zhou , W. J. Brunner , E. A. Szwed , H. Henstridge , L. H. Fowler-Gerace , L. V. Butov

Ensembles of indirect or interlayer excitons (IXs) are intriguing systems to explore classical and quantum phases of interacting bosonic ensembles. IXs are composite bosons that feature enlarged lifetimes due to the reduced overlap of the…

Long lifetimes of spatially indirect excitons (IXs), also known as interlayer excitons, make possible long-range IX propagation. Van der Waals heterostructures composed of atomically thin layers of transition-metal dichalcogenides (TMDs)…

介观与纳米尺度物理 · 物理学 2022-06-07 L. H. Fowler-Gerace , Zhiwen Zhou , E. A. Szwed , L. V. Butov

Indirect excitons (IXs) in van der Waals transition-metal dichalcogenide (TMD) heterostructures are characterized by a high binding energy making them stable at room temperature and giving the opportunity for exploring fundamental phenomena…

介观与纳米尺度物理 · 物理学 2018-05-24 E. V. Calman , M. M. Fogler , L. V. Butov , S. Hu , A. Mishchenko , A. K. Geim

Long lifetimes of spatially indirect excitons (IXs), also known as interlayer excitons, allow implementing both quantum exciton systems and long-range exciton transport. Van der Waals heterostructures (HS) composed of atomically thin layers…

介观与纳米尺度物理 · 物理学 2024-07-09 L. H. Fowler-Gerace , Zhiwen Zhou , E. A. Szwed , D. J. Choksy , L. V. Butov

Indirect excitons (IXs), also known as interlayer excitons, can form the medium for excitonic devices whose operation is based on controlled propagation of excitons. A proof of principle for excitonic devices was demonstrated in GaAs…

介观与纳米尺度物理 · 物理学 2021-10-13 L. H. Fowler-Gerace , D. J. Choksy , L. V. Butov

Spatially indirect excitons in semiconductor quantum wells are relevant to basic research and device applications because they exhibit enhanced tunability, delocalized wave functions, and potentially longer lifetimes relative to direct…

We explore attractive dipolar interaction in indirect excitons (IXs). For one layer of IXs in a single pair of coupled quantum wells (CQW), the out-of-plane IX electric dipoles lead to repulsive dipolar interaction between IXs. The…

介观与纳米尺度物理 · 物理学 2021-01-27 Darius Choksy , Chao Xu , Michael Fogler , Leonid Butov , Justin Norman , Arthur Gossard

We report on the modulation of indirect excitons (IXs) as well as their transport by moving periodic potentials produced by surface acoustic waves (SAWs). The potential modulation induced by the SAW strain modifies both the band gap and the…

介观与纳米尺度物理 · 物理学 2015-06-17 Adriano Violante , Kobi Cohen , Snežana Lazić , Rudolph Hey , Ronen Rapaport , Paulo Ventura Santos

Dipolar (or spatially indirect) excitons (IXs) in semiconductor double quantum well (DQW) subjected to an electric field are neutral species with a dipole moment oriented perpendicular to the DQW plane. Here, we theoretically study…

介观与纳米尺度物理 · 物理学 2020-07-29 C. Hubert , K. Cohen , A. Ghazaryan , M. Lemeshko , R. Rapaport , P. V. Santos

Resonance dielectric response of excitons is studied for the high-quality GaAs/InGaAs heterostructures with wide asymmetric quantum wells (QWs). To highlight effects of the QW asymmetry, we have grown and studied several heterostructures…

Indirect excitons (IX) in semiconductor heterostructures are bosons, which can cool below the temperature of quantum degeneracy and can be effectively controlled by voltage and light. IX quantum Bose gases and IX devices were explored in…

介观与纳米尺度物理 · 物理学 2020-02-27 E. V. Calman , L. H. Fowler-Gerace , L. V. Butov , D. E. Nikonov , I. A. Young , S. Hu , A. Mischenko , A. K. Geim

Transition metal dichalcogenide heterostructures can host interlayer excitons (IXs), which consist of electrons and holes spatially separated in different layers. IXs possess permanent dipoles and have proven to offer a wealth of novel…

材料科学 · 物理学 2021-11-24 Darien J. Morrow , Xuedan Ma

For quantum technologies based on single excitons and spins, the deterministic placement and control of a single exciton is a long-standing goal. MoSe2-WSe2 heterostructures host spatially indirect interlayer excitons (IXs) which exhibit…

An accurate calculation of the exciton ground and excited states in AlGaAs and InGaAs coupled quantum wells (CQWs) in an external electric field is presented. An efficient and straightforward algorithm of solving the Schrodinger equation in…

其他凝聚态物理 · 物理学 2012-05-15 K. Sivalertporn , L. Mouchliadis , A. L. Ivanov , R. Philp , E. A. Muljarov

Long-lived indirect excitons (IXs) exhibit a rich phase diagram, including a Bose-Einstein condensate (BEC), a Wigner crystal, and other exotic phases. Recent experiments have hinted at a new, "classical" liquid of IXs above the BEC…

介观与纳米尺度物理 · 物理学 2022-09-07 Paul R. Wrona , Eran Rabani , Phillip L. Geissler

Interlayer excitons (IXs) possess a much longer lifetime than intralayer excitons due to the spatial separation of the electrons and holes; hence, they have been pursued to create exciton condensates for decades. The recent emergence of…

Indirect excitons in coupled quantum wells are long-living quasi-particles, explored in the studies of collective quantum states. We demonstrate, that despite the extremely low oscillator strength, their spin and population dynamics can by…

We report on the coherent control and transport of indirect exciton (IX) spins in GaAs double quantum well (DQW) nanostructures. The spin dynamics was investigated by optically generating spins using a focused, circularly polarized light…

介观与纳米尺度物理 · 物理学 2015-03-11 Adriano Violante , Rudolf Hey , Paulo Ventura Santos

Controlling the flow of charge neutral interlayer exciton (IX) quasiparticles can potentially lead to low loss excitonic circuits. Here, we report unidirectional transport of IXs along nanoscale electrostatically defined channels in an…

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