相关论文: Binary Multifunctional Ultrabroadband Self-Powered…
Graphene and other two-dimensional (2D) materials have emerged as promising materials for broadband and ultrafast photodetection and optical modulation. These optoelectronic capabilities can augment complementary metal-oxide-semiconductor…
An isotype heterojunction n+-ZnO/n-Si photodetector is developed, demonstrating wavelength-selective or broadband operation, depending on the applied bias voltage. Additionally, at self-powered (zero bias) operation, it distinguishes…
Photodetectors converting light signals into detectable photocurrents are ubiquitously in use today. To improve the compactness and performance of next-generation devices and systems, low dimensional materials provide rich physics to…
A simplistic design of a self-powered UV-photodetector device based on hybrid r-GO/GaN is demonstrated. Under zero bias, the fabricated hybrid photodetector shows a photosensivity of ~ 85% while ohmic contact GaN photodetector with…
Topological insulators have shown great potential for future optoelectronic technology due to their extraordinary optical and electrical properties. Photodetectors, as one of the most widely used optoelectronic devices, are crucial for…
Engineering nanoscale light matter interaction in mixed dimensional semiconductor heterostructures offers a pathway to mitigate the intrinsic gain bandwidth trade off in photodetectors. Here, we report a broadband, high responsivity 2D and…
On-chip integration of two-dimensional (2D) materials offers great potential for the realization of novel optoelectronic devices in different photonic platforms. In particular, indium selenide (InSe) is a very promising 2D material due to…
Highly sensitive and fast photodetector devices with CdSe quantum nanowires as active elements have been developed exploiting the advantages of electro- and wet-chemical routes. Bismuth nanoparticles electrochemically synthesized directly…
Advances in silicon (Si) photonics at submicrometer wavelengths are unlocking new opportunities to realize miniaturized, scalable optical systems for biophotonics, quantum information, imaging, spectroscopy, and displays. Addressing this…
Efficiently distinguishing photon numbers is a crucial yet challenging technology for various quantum information and quantum metrology applications. While superconducting transition edge sensors offer good photon-number-resolving (PNR)…
Photodetector based on two-dimensional (2D) materials is an ongoing quest in optoelectronics. These 2D photodetectors are generally efficient at low illuminating power but suffer severe recombination processes at high power, which results…
The demand for high-performance semiconductors in electronics and optoelectronics has prompted the expansion of low-dimensional materials research to ternary compounds. However, photodetectors based on 2D ternary materials usually suffer…
Intersubband optoelectronic devices rely on transitions between quantum-confined electron levels in semiconductor heterostructures, which enables infrared (IR) photodetection in the 1-30 $\mu$m wavelength window with picosecond response…
Unlocking the full potential of integrated photonics requires versatile, multi-functional devices that can adapt to diverse application demands. However, confronting this challenge with conventional single-function resonators often results…
Ultrafast, high quantum efficiency single photon detectors are among the most sought-after elements in modern quantum optics and quantum communication. High photon detection efficiency is essential for scalable measurement-based quantum…
The study proposes an ultra-thin back side illuminated (BSI) and top-illuminated, Ge on Si photodetector (PD), for 1 to 1.4 microns wavelength range. The Ge thickness of 350 nm allows us to achieve high-speed performance at >60 GHz, while…
In this work, we demonstrate the performance of a silicon-compatible high-performance self-powered photodetector.A wide detection range from visible (405 nm) to near-infrared (1550 nm) light was enabled by the vertical p-n heterojunction…
n-Ga2O3/p-GaN heterojunction based photodetector devices are fabricated on Si-doped (-201) \beta-Ga2O3 epitaxial layers grown by pulsed laser deposition (PLD) technique on p-type c-GaN/sapphire templates. These devices demonstrate the…
Future generation technologies demand high efficiency photodetectors to enable sensing and switching devices for ultrafast communication and machine vision. This require direct-band gap materials with high photosensitivity, high detectivity…
Cryogenic opto-electronic interconnects are gaining increasing interest as a means to control and read out cryogenic electronic components. The challenge is to achieve sufficient signal integrity with low heat load processing. In this…