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Transmission electron microscopy (TEM) and scanning TEM (STEM) are indispensable tools for materials characterization. However, during a typical (S)TEM experiment, the sample is subject to a number of effects that can change its atomic…

材料科学 · 物理学 2020-12-08 Gregor T. Leuthner , Toma Susi , Clemens Mangler , Jannik C. Meyer , Jani Kotakoski

Close to charge neutrality, the low-energy properties of high-quality suspended devices based on atomically thin graphene layers are determined by electron-electron interactions. Bernal-stacked layers, in particular, have shown a remarkable…

强关联电子 · 物理学 2016-10-20 Youngwoo Nam , Dong-Keun Ki , Mikito Koshino , Edward McCann , Alberto F. Morpurgo

Bilayer graphene has been a subject of intense study in recent years. We extend a structural phase field crystal method to include an external potential from adjacent layer(s), which is generated by the corresponding phase field and changes…

材料科学 · 物理学 2020-12-24 Kai Liu

The recent discovery of superconductivity and magnetism in trilayer rhombohedral graphene (RG) establishes an ideal, untwisted platform to study strong correlation electronic phenomena. However, the correlated effects in multilayer RG have…

We induced periodic biaxial tensile strain in polycrystalline graphene by wrapping it over a substrate with repeating pillar-like structures with a periodicity of 600 nm. Using Raman spectroscopy, we determined to have introduced biaxial…

A striking feature of bilayer graphene is the induction of a significant band gap in the electronic states by the application of a perpendicular electric field. Thicker graphene layers are also highly attractive materials. The ability to…

介观与纳米尺度物理 · 物理学 2012-02-21 Chun Hung Lui , Zhiqiang Li , Kin Fai Mak , Emmanuele Cappelluti , Tony F. Heinz

We study the electronic structure of multilayer graphenes with a mixture of Bernal and rhombohedral stacking and propose a general scheme to understand the electronic band structure of an arbitrary configuration. The system can be viewed as…

介观与纳米尺度物理 · 物理学 2015-06-12 Mikito Koshino , Edward McCann

The carrier density distributions in few-layer-graphene systems grown on the carbon face of silicon carbide can be altered by the presence of a scanning tunneling microscope (STM) tip used to probe top-layer electronic properties, and by a…

介观与纳米尺度物理 · 物理学 2011-04-20 Hongki Min , S. Adam , Young Jae Song , Joseph A. Stroscio , M. D. Stiles , A. H. MacDonald

The crystallographic stacking order in multilayer graphene plays an important role in determining its electronic properties. It has been predicted that a rhombohedral (ABC) stacking displays a conducting surface state with flat electronic…

Graphene, being one-atom thick, is extremely sensitive to the presence of adsorbed atoms and molecules and, more generally, to defects such as vacancies, holes and/or substitutional dopants. This property, apart from being directly usable…

材料科学 · 物理学 2011-04-08 Rocco Martinazzo , Simone Casolo , Gian Franco Tantardini

The atomic structure and physical properties of few-layered <111> oriented diamond nanocrystals (diamanes), covered by hydrogen atoms from both sides are studied using electronic band structure calculations. It was shown that energy…

ABC-stacked trilayer graphene's chiral band structure results in three ($n=0,1,2$) Landau level orbitals with zero kinetic energy. This unique feature has important consequences on the interaction driven states of the 12-fold degenerate…

介观与纳米尺度物理 · 物理学 2012-09-20 Yafis Barlas , R. Cote , Maxime Rondeau

The band structure of ABC-stacked N-layer graphene comprises topologically corresponding flat surface and gapped bulk subbands, as a consequence of the unique stacking configuration. In this paper, the bulk subbands are for the first times…

介观与纳米尺度物理 · 物理学 2017-05-31 Ching-Hong Ho , Cheng-Peng Chang , Ming-Fa Lin

Since the advent of graphene, a variety of studies have been performed to elucidate its fundamental physics, or to explore its practical applications. Gate-tunable resistance is one of the most important properties of graphene and has been…

介观与纳米尺度物理 · 物理学 2018-09-28 Taiki Hirahara , Ryoya Ebisuoka , Takushi Oka , Tomoaki Nakasuga , Shingo Tajima , Kenji Watanabe , Takashi Taniguchi , Ryuta Yagi

Polycrystalline graphene has an inherent tendency to buckle, i.e. develop out-of-plane, three-dimensional structure. A force applied to stretch a piece of polycrystalline graphene influences the out-of-plane structure. Even if the graphene…

材料科学 · 物理学 2019-10-28 Federico D'Ambrosio , Vladimir Juričić , Gerard T. Barkema

Molecules intercalating two-dimensional (2D) materials form complex structures that have been mostly characterized by spatially averaged techniques. Here we use aberration-corrected scanning transmission electron microscopy and…

The intrinsic resistance peak (ridge) structures were recently found to appear in the carrier density dependence plot of the resistance of the AB-stacked multilayer graphene with even numbers of layers.The ridges are due to topological…

介观与纳米尺度物理 · 物理学 2020-01-29 Tomoaki Nakasuga , Taiki Hirahara , Kota Horii , Ryoya Ebisuoka , Shingo Tajima , Kenji Watanabe , Takashi Taniguchi , Ryuta Yagi

The authors report micro-Raman investigation of changes in the single and bilayer graphene crystal lattice induced by the low and medium energy electron-beam irradiation (5 and 20 keV). It was found that the radiation exposures results in…

材料科学 · 物理学 2009-11-13 Desalegne Teweldebrhan , Alexander A. Balandin

Molecular adsorption at the surface of a 2D material poses numerous questions regarding the modification to the band structure and interfacial states, which of course deserve full attention. In line with this, first-principle density…

材料科学 · 物理学 2020-03-27 Tanmay Das , Sesha Vempati

When electrons are confined in a two dimensional (2D) system, typical quantum mechanical phenomena such as Landau quantization can be detected. Graphene systems, including the single atomic layer and few-layer stacked crystals, are ideal 2D…

介观与纳米尺度物理 · 物理学 2017-03-14 Long-jing Yin , Ke-ke Bai , Wen-xiao Wang , Si-Yu Li , Yu Zhang , Lin He