相关论文: Ultralong spin lifetimes in one-dimensional semico…

We theoretically investigate the D'yakonov-Perel' spin relaxation properties in diffusive wurtzite semiconductor nanowires and their impact on the quantum correction to the conductivity. Although the lifetime of the long-lived spin states…

We consider spin relaxation of finite-size spin chains exchanged coupled with a one dimensional (1D) electron gas at the edge of a Quantum Spin Hall (QSH) insulator. Spin lifetimes can be enhanced due to two independent mechanisms. First,…

A long spin-lifetime of electrons is the holy grail of spintronics, a field exploiting the electron angular momentum as information carrier and storage unit. Previous reports indicated a spin lifetime, $\tau_{\text{s}}$ near $10$ ns at best…

We show spin lifetimes of 12.6 ns and spin diffusion lengths as long as 30.5 \mu m in single layer graphene non-local spin transport devices at room temperature. This is accomplished by the fabrication of Co/MgO-electrodes on a Si/SiO$_2$…

The energy dependence of the relaxation rate of hot electrons due to interaction with the Fermi sea is studied. We consider 2D and 3D systems, quasi-1D quantum wires with multiple transverse bands, as well as single-channel 1D wires. Our…

Device concepts in semiconductor spintronics make long spin lifetimes desirable, and the requirements put on spin control by schemes of quantum information processing are even more demanding. Unfortunately, due to spin-orbit coupling…

The spin relaxation time of electrons in GaAs and GaN are determined with a model that includes momentum scattering by phonons and ionized impurities, and spin scattering by the Elliot-Yafet, D'yakonov-Perel, and Bir-Aronov-Pikus…

The development of spin qubits for quantum technologies requires their protection from the main source of finite-temperature decoherence: atomic vibrations. Here we eliminate one of the main barriers to the progress in this field by…

We report on time-resolved Kerr rotation measurements of spin coherence of electrons in the first excited subband of a high-mobility low-density two-dimensional electron system in a GaAs/Al0.35Ga0.65As heterostructure. While the transverse…

Today's great challenges of energy and informational technologies are addressed with a singular compound, the Li and Na doped few layer graphene. All what is impossible for graphite (homogeneous and high level Na doping), and unstable for…

Time-resolved Faraday rotation is used to study both transverse and longitudinal spin relaxation in chemically-synthesized CdSe nanocrystals (NCs) 22-80 Angstroms in diameter. The precession of optically-injected spins in a transverse…

Silicon is undoubtedly one of the most promising semiconductor materials for spin-based information processing devices. Its highly advanced fabrication technology facilitates the transition from individual devices to large-scale processors,…

A theory of electron spin relaxation in semiconducting carbon nanotubes is developed based on the hyperfine interaction with disordered nuclei spins I=1/2 of $^{13}$C isotopes. It is shown that strong radial confinement of electrons…

We use a combination of molecular dynamics and quantum transport simulations to investigate the upper limit of spin transport in suspended graphene. We find that thermally-induced atomic-scale corrugations are the dominant factor, limiting…

We present a new fabrication method of graphene spin-valve devices which yields enhanced spin and charge transport properties by improving both the electrode-to-graphene and graphene-to-substrate interface. First, we prepare Co/MgO spin…

Many proposed spintronics devices require mobile electrons at room temperature with long spin lifetimes. One route to achieving this is to use quantum wells with tunable spin-orbit (SO) parameters. Research has focused on zinc-blende…

Controlling nanocircuits at the single electron spin level is a possible route for large-scale quantum information processing. In this context, individual electron spins have been identified as versatile quantum information carriers to…

We describe the transport properties of a 5 $\mu$m long one-dimensional (1D) quantum wire. Reduction of conductance plateaux due to the introduction of weakly disorder scattering are observed. In an in-plane magnetic field, we observe…

Long carrier spin lifetimes are a double-edged sword for the prospect of constructing "spintronic" logic devices: Preservation of the logic variable within the transport channel or interconnect is essential to successful completion of the…

We experimentally investigate the dynamics of a persistent spin helix in etched GaAs wire structures of 2 to 80 um width. Using magneto-optical Kerr rotation with high spatial resolution, we determine the lifetime of the spin helix. A few…