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We investigate the quantum mechanical origin of resistive phase transitions in solids driven by a constant electric field in the vicinity of a metal-insulator transition. We perform a nonequilibrium mean-field analysis of a…

强关联电子 · 物理学 2018-08-01 Jong E. Han , Jiajun Li , Camille Aron , Gabriel Kotliar

Vanadium dioxide is currently considered as one of the most promising metarials for oxide elcteronics. Both planar and sandwich thin-film MOM devices based on VO2 exhibit electrical switching with an S-shaped I-V characteristic, and this…

A theory of the metal-insulator transition in vanadium dioxide from the high-temperature rutile to the low- temperature monoclinic phase is proposed on the basis of cluster dynamical mean field theory, in conjunction with the density…

强关联电子 · 物理学 2009-11-10 S. Biermann , A. Poteryaev , A. I. Lichtenstein , A. Georges

The nature of the Mott transition in the absence of any symmetry braking remains a matter of debate. We study the correlation-driven insulator-to-metal transition in the prototypical 3D Mott system GaTa4Se8, as a function of temperature and…

强关联电子 · 物理学 2015-06-22 A. Camjayi , C. Acha , R. Weht , M. G. Rodríguez , B. Corraze , E. Janod , L. Cario , M. J. Rozenberg

VO2 material is promising for developing energy-saving "smart window", owing to its thermochromic property induced by metal-insulator transition (MIT). However, its practical application is greatly limited by the relatively high critical…

应用物理 · 物理学 2019-05-10 Shi Chen , Zhaowu Wang , Hui Ren , Yuliang Chen , Wensheng Yan , Chengming Wang , Bowen Li , Jun Jiang , Chongwen Zou

The physics of the metal-insulator transition (MIT) in vanadium dioxide remains a subject of intense interest. Because of the complicating effects of elastic strain on the phase transition, there is interest in comparatively strain-free…

Recently, application of electric field (E-field) has received considerable attention as a new method to induce novel quantum phenomena since application of E-field can tune the electronic states directly with obvious scientific and…

强关联电子 · 物理学 2013-09-03 Fumihiko Nakamura , Mariko Sakaki , Yuya Yamanaka , Sho Tamaru , Takashi Suzuki , Yoshiteru Maeno

Infrared (IR) transmittance tunable metal-insulator conversion was demonstrated on glass substrate by using thermochromic vanadium dioxide (VO2) as the active layer in three-terminal thin-film-transistor-type device with water-infiltrated…

材料科学 · 物理学 2017-09-19 Takayoshi Katase , Kenji Endo , Hiromichi Ohta

We study field-effect transistors realized from VO2 nanobeams with HfO2 as the gate dielectric. When heated up from low to high temperatures, VO2 undergoes an insulator-to-metal transition. We observe a change in conductance (~ 6 percent)…

强关联电子 · 物理学 2011-09-30 Shamashis Sengupta , Kevin Wang , Kai Liu , Ajay K. Bhat , Sajal Dhara , Junqiao Wu , Mandar M. Deshmukh

We have measured the electrical properties of a V2O3 thin film micro bridge at the insulator metal transition (IMT). Discontinuous jumps to lower voltages in the current voltage characteristic (IV) followed by an approximately constant…

材料科学 · 物理学 2014-06-24 S. Guénon , S. Scharinger , Siming Wang , J. G Ramírez , D. Koelle , R. Kleiner , Ivan K. Schuller

Strongly correlated insulators, such as Mott or charge-transfer insulators, exhibit a strong temperature dependence in their resistivity. Consequently, self-heating effects can lead to electrothermal instabilities in planar thin film…

Dynamic radiative cooling attracts fast-increasing interest due to its adaptability to changing environment and promises for more energy-savings than the static counterpart. Here we demonstrate enhanced infrared emission by thermally…

应用物理 · 物理学 2020-12-16 Linshuang Long , Sydney Taylor , Liping Wang

An abrupt Mott metal-insulator transition (MIT) rather than the continuous Hubbard MIT near a critical on-site Coulomb energy U/U_c=1 is observed for the first time in VO_2, a strongly correlated material, by inducing holes of about 0.018%…

强关联电子 · 物理学 2009-11-10 Hyun-Tak Kim , B. G. Chae , D. H. Youn , S. L. Maeng , K. Y. Kang

Insulator to metal (IMT) transition (T$_t$ $\sim$ 341 K) in the VO2 accompanies transition from an infrared (IR) transparent to IR opaque phase. Tailoring of the IMT and associated IR switching behavior can offer potential thermochromic…

材料科学 · 物理学 2020-01-22 S. S. Majid , S. R. Sahu , A. Ahad , K. Dey , K. Gautam , F. Rahman , P. Behera , U. Deshpande , V. G. Sathe , D. K. Shukla

The two-dimensional organic conductor $\alpha$-(BEDT-TTF)$_2$I$_3$ undergoes a metal-insulator transition at $T_{\rm CO}=135$ K due to electronic charge ordering. We have conducted time-resolved investigations of its electronic properties…

强关联电子 · 物理学 2016-06-15 Tobias Peterseim , Tomislav Ivek , Dieter Schweitzer , Martin Dressel

While the phase diagrams of the one- and multi-orbital Hubbard model have been well studied, the physics of real Mott insulators is often much richer, material dependent, and poorly understood. In the prototype Mott insulator…

强关联电子 · 物理学 2018-09-06 Frank Lechermann , Noam Bernstein , I. I. Mazin , Roser Valentí

Application of an electric stimulus to a material with a metal-insulator transition can trigger a large resistance change. Resistive switching from an insulating into a metallic phase, which typically occurs by the formation of conducting…

We present {\it ab initio} LDA+DMFT results for the many-particle density of states of $VO_{2}$ on the metallic side of the strongly first-order ($T$-driven) insulator-metal transition. In strong contrast to LDA predictions, there is {\it…

强关联电子 · 物理学 2015-06-24 M. S. Laad , L. Craco , E. Müller-Hartmann

Managing light-matter interactions on timescales faster than the loss of electronic coherence is key for achieving full quantum control of the final products in solid-solid transformations. In this work, we demonstrate coherent electronic…

The metal-insulator transition and unconventional metallic transport in vanadium dioxide (VO$_2$) are investigated with a combination of spectroscopic ellipsometry and reflectance measurements. The data indicates that electronic…

强关联电子 · 物理学 2009-11-11 M. M. Qazilbash , K. S. Burch , D. Whisler , D. Shrekenhamer , B. G. Chae , H. T. Kim , D. N. Basov