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Moir\'e materials, with superlattice periodicity many times the atomic length scale, have enabled the studies of strong electronic correlations and band topology with unprecedented tunability. However, nonvolatile control of the moir\'e…

介观与纳米尺度物理 · 物理学 2022-09-15 Kaifei Kang , Wenjin Zhao , Yihang Zeng , Kenji Watanabe , Takashi Taniguchi , Jie Shan , Kin Fai Mak

Recent renewed interest in layered transition metal dichalcogenides stems from the exotic electronic phases predicted and observed in the single- and few-layer limit. Realizing these electronic phases requires preserving the desired…

材料科学 · 物理学 2016-06-21 J. M. Woods , J. Shen , P. Kumaravadivel , Y. Pang , Y. Xie , G. A. Pan , M. Li , E. I. Altman , L. Lu , J. J. Cha

Vertical ferroelectricity where a net dipole moment appears as a result of in-plane ionic displacements has gained enormous attention following its discovery in transition metal dichalcogenides. Based on first-principles calculations, we…

材料科学 · 物理学 2021-10-29 Xiaonan Ma , Chang Liu , Wei Ren , Sergey A. Nikolaev

The layer stacking order in 2D materials strongly affects functional properties and holds promise for next generation electronic devices. In bulk, octahedral MoTe$_2$ possesses two stacking arrangements, the Weyl semimetal T$_d$ phase, and…

In bilayers of two-dimensional (2D) semiconductors with stacking arrangements which lack inversion symmetry charge transfer between the layers due to layer-asymmetric interband hybridisation can generate a potential difference between the…

介观与纳米尺度物理 · 物理学 2021-07-01 F. Ferreira , V. V. Enaldiev , V. I. Fal'ko , S. J. Magorrian

Layered transition metal dichalcogenides MoTe$_2$ and WTe$_2$ share almost similar lattice constants as well as topological electronic properties except their structural phase transitions. While the former shows a first-order phase…

介观与纳米尺度物理 · 物理学 2017-05-10 Hyun-Jung Kim , Seoung-Hun Kang , Ikutaro Hamada , Young-Woo Son

We report on the low-energy electronic structure of Tantalum ditelluride (1$T'$-TaTe$_2$), one of the charge density wave (CDW) materials from the group V transition metal dichalcogenides using angle-resolved photoemission spectroscopy…

Van der Waals (vdW) materials have greatly expanded our design space of heterostructures by allowing individual layers to be stacked at non-equilibrium configurations, for example via control of the twist angle. Such heterostructures not…

介观与纳米尺度物理 · 物理学 2022-02-04 Xirui Wang , Kenji Yasuda , Yang Zhang , Song Liu , Kenji Watanabe , Takashi Taniguchi , James Hone , Liang Fu , Pablo Jarillo-Herrero

Two-dimensional materials and their heterostructures have opened up new possibilities for magnetism at the nanoscale. In this study, we utilize first-principles simulations to investigate the structural, electronic, and magnetic properties…

材料科学 · 物理学 2022-10-11 Diem Thi-Xuan Dang , Ranjan Kumar Barik , Manh-Huong Phan , Lilia M. Woods

MoTe$_2$ is an exfoliable transition metal dichalcogenide (TMD) which crystallizes in three symmetries, the semiconducting trigonal-prismatic $2H-$phase, the semimetallic $1T^{\prime}$ monoclinic phase, and the semimetallic orthorhombic…

The capability to switch electrically between superconducting and insulating states of matter represents a novel paradigm in the state-of-the-art engineering of correlated electronic systems. An exciting possibility is to turn on…

Elastoresistance describes the relative change of a material's resistance when strained. It has two major contributions: strain induced geometric and electronic changes. If the geometric factor dominates, like in ordinary metals such as…

材料科学 · 物理学 2020-01-14 Na Hyun Jo , Lin-Lin Wang , Peter P. Orth , Sergey L. Bud'ko , Paul C. Canfield

Contemporary science is witnessing a rapid expansion of the two-dimensional (2D) materials family, each member possessing intriguing emergent properties of fundamental and practical importance. Using the particle-swarm optimization method…

介观与纳米尺度物理 · 物理学 2017-09-13 Zhili Zhu , Xiaolin Cai , Chunyao Niu , Seho Yi , Zhengxiao Guo , Feng Liu , Jun-Hyung Cho , Yu Jia , Zhenyu Zhang

Transition-metal dichalcogenides (WTe$_2$ and MoTe$_2$) have drawn much attention, recently, because of the nonsaturating extremely large magnetoresistance (XMR) observed in these compounds in addition to the predictions of likely type-II…

The spin orientation of electronic wavefunctions in crystals is an internal degree of freedom, typically insensitive to electrical knobs. We argue from a general symmetry analysis and a $\vec k \cdot \vec p$ perspective, that monolayer…

介观与纳米尺度物理 · 物理学 2019-01-03 Li-kun Shi , Justin C. W. Song

Two-dimensional transition metal dichalcogenides have attracted great attention recently. Motivated by a recent study of crystalline bulk VTe$_2$, we theoretically investigated the spin-charge-lattice interplay in monolayer VTe$_2$. To…

材料科学 · 物理学 2022-06-23 Do Hoon Kiem , Min Yong Jeong , Hongkee Yoon , Myung Joon Han

Two-dimensional chromium ditelluride (CrTe2) is a promising ferromagnetic layered material that exhibits long-range ferromagnetic ordering in the monolayer limit. The formation energies of the different possible structural phases (1T, 1H,…

材料科学 · 物理学 2023-05-02 Yuhang Liu , Sohee Kwon , George J. de Coster , Roger K. Lake , Mahesh R. Neupane

Monolayer VSe2, featuring both charge density wave and magnetism phenomena, represents a unique van der Waals magnet in the family of metallic two-dimensional transition-metal dichalcogenides (2D-TMDs). Herein, by means of in-situ…

van der Waals stacking of two-dimensional (2D) materials offers a powerful platform for engineering material interfaces with tailored electronic and optical properties. While most van der Waals multilayers have featured inorganic…

Atomically thin layers of transition-metal dicalcogenides (TMDCs) are often known to be metastable in the ambient atmosphere. Understanding the mechanism of degradation is essential for their future applications in nanoelectronics, and thus…

介观与纳米尺度物理 · 物理学 2017-01-31 W. L. Liu , M. L. Chen , X. X. Li , S. Dubey , T. Xiong , Z. M. Dai , J. Yin , W. L. Guo , J. L. Ma , Y. N. Chen , J. Tan , D. Li , Z. H. Wang , W. Li , V. Bouchiat , D. M. Sun , Z. Han , Z. D. Zhang