相关论文: Gate-Controlled Magnetoresistance of a Paramagneti…
Gate-tunable spin-dependent properties could be induced in graphene at room temperature through magnetic proximity effect by placing it in contact with a metallic ferromagnet. Because strong chemical bonding with the metallic substrate…
Perpendicular magnetic anisotropy (PMA) is a necessary condition for many spintronic applications like spin-orbit torques switching, logic and memory devices. An important class of magnetic insulators with low Gilbert damping at room…
Current-induced magnetization switching through spin-orbit torques (SOTs) is the fundamental building block of spin-orbitronics. The SOTs generally arise from the spin-orbit coupling of heavy metals. However, even in a heterostructure where…
Antiferromagnetic materials promise improved performance for spintronic applications, as they are robust against external magnetic field perturbations and allow for faster magnetization dynamics compared to ferromagnets. The direct…
Spin transport via magnon diffusion in magnetic insulators is important for a broad range of spin-based phenomena and devices. However, the absence of the magnon equivalent of an electric force is a bottleneck. In this work, we demonstrate…
Electrostatic gating confines and controls the transport of electrons in integrated circuits. Magnons, the quanta of spin waves of the magnetic order, are promising alternative information carriers, but difficult to gate. Here we report…
Solid-state nanopore gating inspired by biological ion channels is gaining increasing traction due to a large range of applications in biosensing and drug delivery. Integration of stimuli-responsive molecules such as…
We study one-dimensional transport in focused-ion-beam written in-plane-gate transistors on III-V heterostructures at moderately low temperatures at zero bias without any external magnetic field applied. In accordance with a recent proposal…
The nature of a metal-insulator transition tuned by external gates in quantum Hall (QH) systems with point constrictions, as reported in recent experiments of Roddaro et al [1], is examined. We attribute this phenomenon to a splitting of…
Diluted magnetic semiconductors (DMS) have attracted significant attention for their potential in spintronic applications. Particularly, magnetically-doped GaN is highly attractive due to its high relevance for the CMOS industry and the…
Spin-dependent transport was investigated in a spin metal-oxide-semiconductor field-effect transistors (spin MOSFET) with ferromagnetic MnAs source and drain (S/D) contacts. The spin MOSFET of bottom-gate type was fabricated by…
Motivated by experimental work showing enhancement of spin transport between Yttrium Iron Garnet and Platinum by a thin antiferromagnetic insulator between them, we consider spin transport through the interface of a non-magnetic metal and…
Optical control of structure-driven magnetic order offers a platform for magneto-optical terahertz devices. We control the magnetic phases of $d^1$ Mott insulating titanates using nonlinear phononics to transiently perturb the atomic…
An approach to the electrostatic control of $90^{\circ}$ magnetization rotation in the hybrid structures composed of topological insulators (TIs) and adjacent ferromagnetic insulators (FMI) is proposed and studied. The concept is based on…
Ionic gating is a powerful technique for tuning the physical properties of a material via electric field-induced charge doping, but is prone to introduce extrinsic disorder and undesired electrochemical modifications in the gated material…
We report anisotropic magnetoresistance in Pt|Y3Fe5O12 bilayers. In spite of Y3Fe5O12 being a very good electrical insulator, the resistance of the Pt layer reflects its magnetization direction. The effect persists even when a Cu layer is…
We conducted a systematic angular dependence study of nonlinear magnetoresistance in NiFe/Pt bilayers at variable temperature and field using the Wheatstone bridge method. We successfully disentangled magnon magnetoresistance from other…
We describe a proposed experimental search for exotic spin-coupled interactions using a solid-state paramagnetic insulator. The experiment is sensitive to the net magnetization induced by the exotic interaction between the unpaired…
We demonstrate with a fully quantum-mechanical approach that graphene can function as gate-controllable transistors for pumped spin currents, i.e., a stream of angular momentum induced by the precession of adjacent magnetizations, which…
Controlling the magnetic anisotropy of ferromagnetic materials plays a key role in magnetic switching devices and spintronic applications. Examples of spin-orbit torque devices with different magnetic anisotropy geometries (in-plane or…